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DB92481m-AAS/A1
APPROVALS
l UL recognised, File No. E91231
DESCRIPTION
The IS605, IS606 are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l High Surge Anode Current (5.0 A)
l High Blocking Voltage (400V*
1
, 625V*1)
l Low Turn on Current (5mA typical)
l All electrical parameters 100% tested
l Custom electrical selections available
APPLICATIONS
l 10A, T
2
L compatible, Solid State Relay
l 25W Logic Indicator Lamp Driver
l 400V Symmetrical transistor coupler
IS605, IS606
PHOTON COUPLED ISOLATOR Ga As
INFRARED EMITTING DIODE &
LIGHT ACTIVATED SCR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Forward Current (Peak)
(1µs pulse, 300pps) 3A
Reverse Voltage 6V
Power Dissipation 100mW
DETECTOR
Peak Forward Voltage
IS605 400V*
1
IS606 625V*
1
Peak Reverse Gate Voltage 6V
RMS On-state Current 300mA
Peak On-state Current
(100µs, 1% duty cycle) 10A
Surge Current (10ms) 5A
Power Dissipation 300mW
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (R
GK
< 56kΩ)
6/12/00
1
3
4
6
2 5
0.26
0.5
Dimensions in mm
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
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PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Voltage (VR) 3 V IR = 10µA
Output Peak Off-state Voltage (V
DM
)
(note 2) IS605 400 V RGK= 10kΩ, ID= 2µA
IS606 625 V RGK= 10kΩ, ID= 2µA
Peak Reverse Voltage (V
RM
)
IS605 400 V RGK= 10kΩ, ID= 2µA
IS606 625 V RGK= 10kΩ, ID= 2µA
On-state Voltage (V
TM
) 1.1 1.3 V ITM = 300mA
Off-state Current (I
DM
)
IS605 2 µA RGK= 10kΩ, IF = 0,
VDM= 400V
IS606 2 µA RGK= 10kΩ, IF = 0,
VDM= 625V
Reverse Current (IR )
IS605 2 µA RGK= 10kΩ, IF = 0,
VDM= 400V
IS606 2 µA RGK= 10kΩ, IF = 0,
VDM= 625V
Coupled Input Current to Trigger ( I
FT
) (note 2)
IS605 11 mA VAK=100V, RGK=27kΩ
IS606 14 mA VAK=100V, RGK=27kΩ
Turn on Time ( t
on
) 50 µs RGK=27kΩ, IF=30mΑ,
VAK=20V, RL=200Ω
Coupled dv/dt, Input to Output (dv/dt) 500 V/µs
Input to Output Isolation Voltage V
ISO
5300 V
RMS
See note 1
7500 V
PK
See note 1
Input-output Isolation Resistance R
ISO
10
11
Ω V
IO
= 500V (note 1)
Input-output Capacitance Cf 2 pF V = 0, f =1MHz
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92481m-AAS/A1
6/12/00
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0 0.5 1 1.5 2 2.5 3
Forward voltage VF ( V )
Input Current to Trigger vs.
Ambient Temperature
1 2 4 6 10 20 40 60 100 200 400 1000
Pulse width ( µs )
Forward current I
F
(mA)
Input Characteristics IF vs. V
F
Normalized input current to trigger I
FT
0 10 20 30 40 50 60 70 80 90 100
Input current IF (mA)
Turn on time t
on
(
µ
s)
Turn on Time vs. Input Current
0.1
0.1
0.2
Anode to cathode voltage VAK ( V )
Input Current to Trigger vs.
Anode to Cathode Voltage
Normalized input current to trigger I
FT
0.1
0.2
1 5 10 50 100 200
0.4
1.0
2
4
10
20
40
100
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
Normalized to VAK = 50V,
RGK =10kΩ, TA = 25 °C
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )
Normalized input current to trigger I
FT
0.1
0.2
0.4
1.0
2
4
10
12
Input Current to Trigger Distribution
vs. Ambient Temperature
Ambient temperature TA ( °C )
-40 -20 0 20 40 60 80 100
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
90th percentile
10th percentile
Input Current to Trigger vs.
Pulse Width
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
RGK =300Ω
1kΩ
10kΩ
27kΩ
56kΩ
Normalized input current to trigger I
FT
0.2
0.4
1
2
4
10
20
40
100
0.1
0.4
1
2
4
10
4
6
8
10
12
14
0
16
18
20
22
24
2
VAK = 50V
ton = td + t
r
tr = 1µs
RGK=1kΩ
10kΩ
56kΩ
0.2
0.4
1
2
4
10
20
40
100
100°C
-55°C
25°C
DB92481m-AAS/A16/12/00
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0 1 2 3 4
On state voltage VT ( V )
Maximum Transient Thermal Impedence
0 0.2 0.4 0.6 0.8 1.0
On state current ( Α )
On state current I
T
(A)
On State Characteristics
Normalized forward current off state ( I
D
)
25 50 75 100
Critical rate of rise applied forward voltage dV/dt (V/
µ
s)
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
Holding current I
H
(
µ
A)
10
Normalized to
VAK = 50V
RGK =10kΩ
TA = 25 °C
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
0.001 0.01 0.1 1 2 4 10 100
Time (seconds)
Transient thermal impedance ( °C / Watt )
Off State Forward Current vs.
Ambient Temperature
Ambient temperature TA ( °C )
0 25 50 75 100
Normalized to
VAK = 50V
TA = 25 °C
On State Current vs. Maximum
Allowable Temperature
Maximum allowable temperature ( °C )
10
100
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature TA ( °C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device.
Junction to lead
Junction to ambient
1
2
4
10
20
40
100
200
400
1000
VAK = 625V
VAK = 50V
20
40
100
200
400
1000
4000
10000
2000
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1. 2. 4.3.
20
30
40
50
60
70
80
90
RGK =300Ω
10kΩ
27kΩ
56kΩ
1kΩ
0.1
1
10
40
100
4
0.4
400
1000
Ambient temperature TA ( °C )
Junction temperature =
25°C
Junction temperature =
100°C
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
DB92481m-AAS/A1
6/12/00
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