Datasheet IS474 Datasheet (Sharp)

IS474

IS474

Linear Output Type OPIC
Light Detector

Features

■

1. Linear output conforming to illuminance
(50 lx to 50000 lx)

2. Conforming to required visual sensitivity characteristics

by means of built-in filter
Peak sensitivity wavelength : TYP. 550 nm

3. Not dependent on kind of light source such as

incandescent lamp and fluorescent lamp

4. Easy-to-mount holder-integral side view type

Applications

■

1. TV sets

2. CRTs of personal computers and others

Outline Dimensions

■

2.0114.0

Type number

Internal connection diagram

1.4

2-R0.3

9.0
Detector center

6.0

2.4

JAPAN

1234
PPP

* Unspecified tolerance : ± 0.2
* ( ) : Reference dimensions
* Lead pitch (P) : 1.27 (at lead root)
* Lead deflection angle θ : ± 10˚ MAX.

Production country

0.28

5.8

1.5

+ 0.1

2-0.5

2-1.0

13

16.7± 0.1

- 0.2

1.7

0.5 2.0

1.0

2.0

4.5

2.0

2.75

2.54

(Unit : mm)

θθ

1

Constant voltage circuit

Photodiode A

2

Photodiode B

Current amp.

3

1 Vcc
3 GND 4 NC

* OPIC (Optical IC) is a trademark of SHARP corporation. An OPIC consists of

a light-detecting element and signal-processing circuit integrated onto a single chip.

2 Io

1.5
4-0.4

+0.2

- 0.1

■

Absolute Maximum Ratings

(Ta=25˚C)

Parameter Symbol Rating Unit
Supply voltage
Output current
Output voltage

V

I

V
Power dissipation
Operating temperature
Storage temperature

*1

Soldering temperature

*1 For MAX. 3 seconds at the position shown in the right drawing

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

T

T

T

-0.5 to 8

CC

O

O

-10

- 0.5 to V

P 150 mW

-25to +85

opr

-40to +85

stg

sol

260 ˚C

V

mA

V

CC

˚C

Soldering area

˚C

Recommended Operating Conditions

■

Parameter Symbol MIN. MAX. Unit
Supply voltage
Illuminance
Output voltage
Operating temperature

*1 CIE standard light source A (tungsten lamp)

■

Electro-optical Characteristics

V

E
V

T

4.5 5.5 V

CC

*1

100

V

0VCC-1.5 V

O

-10 70 ˚C

opr

50 000

lx

Parameter Symbol MIN. TYP. MAX. UnitConditions
Supply current
Output current 1
Output current 2
Output current ratio 1
Output current 3
Output current 4
Output current ratio 2
Dark output current
Peak sensitivity wavelength
Response time (rise)
Response time (fall)

RI

RI

Icc
I
I

I
I

Iod
λ p

O1

O2

O1

O3

O4

O2

t

r

t

f

*1

Ev= 0 lx

*1

Ev= 100 lx

*1

Ev= 1000 lx

/Io

Io

2

*2

Ev= 100 lx

*3

Ev= 100 lx
Io3/Io

*1

Ev= 0 lx

-

= 3.3kΩ

R

L

= 3.3kΩ

R

L

0.2

0.55

- 6.0

-60

1

4

9.0

(

0.9

-10

-100
10

-

-11

-

-10

)

(

)

1.1

-

-10

(

550

12
30

)

-

-

-

Ev= 0 lx

*4

Power source
fluctuation removability

PSRR1

PSRR2

= 3.3kΩ

R

L

at 10kHz
Ev= 0 lx

= 3.3kΩ

R

L

-

48

-

39

at 100kHz
Ev=1000 lx

PSRR3

= 3.3kΩ

R

L

-

11

at 10kHz

*1 Illuminance by CIE standard light source A (tungsten lamp)
*2 Illuminance by incandescent lamp
*3 Illuminance by fluorescent lamp
*4 Power source fluctuation removability PSRR is defined according to the following formula.

PSRR =201og

Vcc ripple voltage

Vo ripple voltage

Test circuit 1 Test circuit 2 Test circuit 3

Ip=660nm

Vin

tr,tf=0.01µ s
Zo=50Ω

Vin

1.0V

IS474

T

IS474

Vcc

Io

GND

A

5V

Vcc

Ev

IS474

A

Io

GND

Ev

5V

(Vcc=5V, Ta=25˚C )

Test circuit

1.0

-14

- 140

(

1.3

- 500

mA

µ A
µ A

11

-

-

-

µ A
µ A

)

­nA
nm

-

µs

-

µs

-

-

dB

-

dB

-

dB

Vcc

Io

Ro

GND

3.3kΩ

T=500µ s
Adjust Vin so that Vo waveform
may be of 1.0V amplitude

1
2
2

­2
2

­2

­3
3

-

-

-

CRT

Vo

90%

IS474

Vcc

0V

10%

tr tf

IS474

Fig. 1 Total Power Dissipation vs.

Ambient Temperature

160
150
140

120

100

80

60

40

Total dissipation P (mW)

20

0

Ambient temperature Ta (˚C )

Fig. 3 Spectral Sensitivity

100

80

60

40

85-25

V

=5V

CC

Ta= 25˚C

Fig. 2 Output Current vs. Illuminance

10 000

1000

100

Output current Io (µ A)

10

1

1000 255075

1

10

2

10

Illuminance EV (lx

= 5V, Ta= 25˚C

V

CC

EV :

Illuminance by CIE

standard light source A

3

10

4

10

)

5

10

Fig. 4 Relative Output Current vs.

Ambient Temperature

1.3

1.2

1.1

1.0

V

=5V

CC

1000 lx (CIE

E =

V

standard light source A)

Relative sensitivity (%)

20

0

500 600 700 800 900400

Wavelength λ (nm) Ambient temperature Ta (˚C)

Fig. 5 Dark Output Current vs. Ambient

Temperature

-6

-10

-7

-10

-8

-10

-9

-10

Dark output current Iod (A)

-10

-10

-25

=5V

V

CC

EV=0

Ambient temperature Ta (˚C)

7550250 100

Relative output current

0.9

0.8
7550250 100-25

Fig. 6 Output Current vs. Supply Voltage

-110
E

=1000 lx

V

(CIE standard
light source A)

= 25˚C

T

a

-100

Output current Io ( µA)

-90

Supply voltage VCC (V

)

1002468

Fig. 7 Output Current vs. Output Voltage

-100

-80

-60

-40

Output current Io (µ A)

-20
V

CC

(CIE standard light source A)

0

Ev = 1 000 lx

800 lx

600 lx

400 lx

200 lx

= 5V, Ta= 25˚C

Output voltage VO (V

)

IS474

Output Current vs. Output Voltage Test Circuit

V

CC

(Main detector)

(Detector
for correction)

501234

Constant voltage circuit
PD1
PD2

5V

A

V

O

I

O

GND

Fig. 8 Supply Current vs. Supply Voltage

3

T

= 25˚C

a

(CIE standard
light source A)

Ev =10 000 lx

)

2

mA

(

CC

1

1 000 lx

Supply current I

100 lx

0 10

0

510

Supply voltage VCC (V

0 lx

)

Fig. 10 Frequency Characteristics

)
(

mV

OP

1 000

100

* Ev= 1 000 lx

10

* Ev= 100 lx

Vcc =5v
Ta =25˚C

Fig. 9 Supply Current vs. Illuminance

2

10

Vcc =5V
Vo =0
(CIE standard
light source A)

)

1

10

mA

(

CC

0

10

-1

10

Supply current I

-2

10

21 345

10 10 10 10

Illuminance Ev (lx)

Frequency Characteristics Test Circuit

(Main detector)

L E D

λP=

660nm

47Ω

Constant voltage circuit

DP1

DP2

CRT

(Detector for correction)

* Incident light quantity E : Converted value of DC

component of output voltage V

O

V

V

CC

O

5V

CRT

IOV

1kΩ

GND

O

AC output voltage V

1

10 100

1

1 000 10 000 100 000

Frequency f (Hz)

Output voltage V

Time t

V

OP

Fig. 11 Radiation Diagram (Right/Left Direction)

- 20˚ - 10˚ 0 + 10˚ + 20˚

100

- 30˚
80

Vcc= 5V
Ta = 25˚C

+30˚

Fig. 12

Radiation Diagram (Top/Bottom Direction)

-20˚ -10˚ 0 +10˚ +20˚
100

-30˚
80

Vcc= 5V
Ta = 25˚C

IS474

+30˚

- 40˚

- 50˚

- 60˚

- 70˚

- 80˚

- 90˚

60

40

Relative sensitivity (%)

20

0

+40˚

+50˚

+60˚
+70˚

+80˚
+90˚

-40˚

-50˚

-60˚

-70˚

-80˚

-90˚

60

40

Relative sensitivity (%)

20

0

Angular displacement θ Angular displacement θ

■

Precautions for Operation

(1) It is recommended to connect a capacitor between V and GND near the device in order to stabilize power supply line

L

Device

CC

Vcc

C

<= 20 mm

L

>= 0.01 µF

C

2 pieces of photodiodes are built in this device to amplify difference in collector current between them.
Radiation of even light to 2 pieces of photodiodes is recommended.
Radiation of uneven light may cause change of spectral sensitivity or starting failure of the circuit after power is supplied.

+40˚

+50˚

+60˚
+70˚

+80˚

+90˚

(2) Cleaning

• Conduct cleaning as follows.
Solvent dip cleaning : Solvent temperature of 45˚C max., dipping time : Within 3 minutes

Ultrasonic cleaning :

Elements are affected differently depending on the size of cleaning bath, ultrasonic output, time, size of PWB and mounting

method of elements. Conduct trial cleaning on actual operating conditions in advance to make sure that no problem results.

• Use following solvents only.
Solvents : Ethyl alcohol, methyl alcohol and isopropyl alcohol

(3) Soldering

Be sure to perform soldering at values within the maximum ratings. Take care so that not external force is applied to
the lead during and immediately after soldering. Do not perform reflow soldering.

Please refer to the chapter "Precautions for Use". (Page 78 to 93)

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