Page 1
IS452
22/4/02
HIGH DENSITY MOUNTING
HIGH VOLTAGE DARLINGTON
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS452 is an optically coupled isolator
consisting of an infrared light emitting diode
and a high voltage NPN silicon photo
darlington which has an integral base-emitter
resistor to optimise switching speed and
elevated temperature characteristics in a space
efficient dual in line plastic package.
FEATURES
l Marked as FPH1.
l Current Transfer Ratio MIN. 1000%
l High collector-emitter voltage, Vceo=300V
l Isolation Voltage (3.75kV
l All electrical parameters 100% tested
l Drop in replacement for Sharp PC452
RMS
,5.3kV
)
PK
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
Dimensions in mm
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92862l-AAS/A3
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ABSOLUTE MAXIMUM RATINGS
22/4/02
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
300V
0.1V
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 10mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 300 V IC = 0.1mA
CEO
) 0.1 V IE = 10uA
ECO
) 200 nA VCE = 200V
CEO
Coupled Current Transfer Ratio (CTR) 1000 % 1mA IF , 2V V
Collector-emitter Saturation VoltageVCE
(SAT)
1.2 V 20mA IF , 100mA I
CE
C
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
3750 V
ISO
5300 V
10
5x10
ISO
RMS
PK
Ω V
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
See note 1
See note 1
= 500V (note 1)
IO
DB92862l-AAS/A3
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TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W
Pitch of sprocket holes P0
Distance of compartment
Distance of compartment to compartment P1
F
P2
12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
Page 4
CHARACTERISTIC CURVES
Fig.1 Forward Current vs. Fig.2 Collector Power Dissipation vs.
Ambient Temperature
60
Ambient Temperature
200
50
(mA)
F
40
30
20
Forward current I
10
0
0 5025 75 100 125-55 -55 125250 50 75 100
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
5
4.5
4
3.5
3
2.5
2
1.5
1
(sat) (V)
CE
V
0.5
Collector-emitter saturation voltage
0
0
Ic=5mA
10mA
30mA
50mA
70mA
100mA
2 4 531
Forward current IF(mA)
150
100
50
Collector power dissipation Pc (mW)
0
o
o
Fig.4 Forward Current vs. Forward
Voltage
100
o
100 C
o
80 C
0.5
60 C
0.90.7 1.1 1.5 1.7
Forward voltage (V)
10
Forward current (mA)
1
o
40 C
20 C
o
o
1.91.3
Fig.5 Current Transfer Ratio vs. Forward
Current
7000
VCE=2V
6000
5000
4000
3000
2000
1000
Current transfer ratio CTR (%)
0
0.1
1
Forward current (mA) Collector-emitter voltage V (V)
10
Fig.6 Collector Current vs.
Collector-emitter Voltage
100
10mA
5mA
80
3mA
2.5mA
60
40
20
Collector current Ic (mA)
0
0
2mA
1.5mA
1.5mA
1mA
1 2 3 4 5
PC (MAX.)
IF =0.5mA
CE
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
Page 5
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
Relative current transfer ratio (%)
0
Ambient temperature Ta ( C)
IF =1mA
VCE=2V
80604020
O
Fig.9 Collector Dark Current vs.
Temperature
1000
VCE=200V
(nA)
CEO
100
10
Collector dark current I
1
Ambient temperature Ta ( C)
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
1.2
IF=20mA
IC=100mA
1.0
0.8
0.6
0.4
CE
V (sat) (V)
Collector-emitter saturation voltage
100
0.2
20
Ambient temperature Ta ( C)
10040 60 80
O
Fig.10 Response Time vs. Load
Resistance
1000
VCE=2V
500
IC=20mA
O
Ta=25 C
200
s)
100
50
20
10
Response time (
5
2
10080604020
O
1
Load resistance RL (k )
tr
tf
td
ts
10.1
10
Fig.11 Frequency Response
0
-5
-10
-15
RL=1k 100 10
-20
Voltage gain Av (dB)
-25
Frequency f (kHz)
VCE=2V
IC=20mA
Ta=25 C
1001010.1
O
500
Test Circuit for Response Time
Input
Vcc
Output
Output
td
tr tf
Input
RD
RL
Test Circuit for Frequency Response
Vcc
RD
RL
ts
Output
10%
90%
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
Page 6
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
230 C
200 C
180 C
1 minute
25 C
2 minutes 1.5 minutes 1 minute
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
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