Page 1
IS357
22/4/02
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS357 is an optically coupled isolator
consisting of an infrared light emitting diode and
NPN silicon photo transistor in a space efficient
dual in line plastic package.
FEATURES
l Marked as FPT1.
l Current Transfer Ratio MIN. 50%
l Isolation Voltage (3.75kV
l All electrical parameters 100% tested
l Drop in replacement for Sharp PC357
RMS
,5.3kV
)
PK
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
Dimensions in mm
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92845l-AAS/A3
Page 2
ABSOLUTE MAXIMUM RATINGS
22/4/02
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
35V
6V
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 35 V IC = 0.5mA
CEO
) 6 V IE = 0.1mA
ECO
) 100 nA VCE = 20V
CEO
Coupled Current Transfer Ratio (CTR) 50 600 % 5mA IF , 5V V
Optional CTR Grades: IS357A 80 160 % 5mA I
IS357B 130 260 % 5mA I
IS357C 200 400 % 5mA I
IS357D 300 600 % 5mA I
, 5V V
F
, 5V V
F
, 5V V
F
, 5V V
F
CE
CE
CE
CE
CE
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
(SAT)
3750 V
ISO
5300 V
10
5x10
ISO
0.2 V 20mA IF , 1.0mA I
RMS
PK
Ω V
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
C
See note 1
See note 1
= 500V (note 1)
IO
DB92845l-AAS/A3
Page 3
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W
Pitch of sprocket holes P0
Distance of compartment
Distance of compartment to compartment P1
F
P2
12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
Page 4
CHARACTERISTIC CURVES
Fig.1 Forword Current Fig.2 Collector Power Dissiption
vs. Ambient Temperatute
60
vs. Ambient Temperature
200
50
(mA)
F
40
30
20
Forward current I
10
0
-55
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
6
1mA
3mA
7mA
5
Ic=0.5mA
4
3
2
1
CE
V (sat) (V)
Collecotr-emitter saturation voltage
0
0
5mA
105
Forward current IF (mA) Forward voltage VF (V)
150
100
50
Collector Power dissipation Pc (mW)
125 0-55 12525 50 75 100
1007550250
o
0
Ambient temperature Ta ( C)Ambient temperature Ta ( C)
Fig.4 Forward Current vs. Forward
Voltage
Ta=25 C
O
15
500
200
100
(mA)
F
Forward current I
Ta=75 C
50
20
10
5
2
1
0
0.5
50 C
1.0
o
o
1.5 2.0 2.5 3.0
o
25 C
o
0 C
-25 C
o
o
Fig.5 Current Transfer Ratio vs.
Forward Current
200
VCE=5V
Ta=25 C
1
o
180
160
140
120
100
80
60
40
Current transfer ratio CTR (%)
20
0
Fig.6 Collector Current vs.
Collector-emitter Voltage
50
IF=30mA
40
30
20
10
Collector current Ic (mA)
0
02 5 10 20 50
1 2 3 4 5 6 7 8 9
Collector-emitter voltage VCE(V)Forward current IF (mA)
25mA
20mA
15mA
10mA
5mA
Ta=25 C
Pc(MAX.)
o
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
Page 5
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
150
100
50
Relative current transfer ratio (%)
0
20 40 60 80 100
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
IF =5mA
VCE=2V
o o
Fig.9 Collector Dark Current vs.
Ambient Temperature
10000
(nA)
1000
CEO
Collector dark current I
VCE=20V
100
10
1
Ambient temperature Ta ( C)
o
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.10
0.08
0.06
0.04
0.02
CE
V (sat) (V)
Collector-emitter saturation voltage
0
20 40 80 100
IF =20mA
IC=1mA
60
Fig.10 Response Time vs. Load
Resistance
500
VCE=2V
200
IC=2mA
o
Ta=25 C
100
50
20
10
5
2
Response time ( s)
1
0.5
0.2
0.0520 40 60 80 100 0.1 0.2 0.5 1 2 5 10
Load resistance RL (k )
tr
tf
td
ts
Fig.11 Frequency Response
0
10
RL=10kΩ
Voltage gain Av (dB)
20
0.5
2 10 100 500
1 5 20 50
Frequency f (kHz)
1kΩ
VCE=2V
IC=2mA
Ta=25 C
100
o
Ω
Test Circuit for Response Time
Input
Vcc
Output
Output
td
tr
Input
R
D
RL
Test Circuit for Frequency Response
Vcc
RD
RL
Output
10%
90%
ts
tf
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
Page 6
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
230 C
200 C
180 C
1 minute
25 C
2 minutes 1.5 minutes 1 minute
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
Loading...