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IS354
22/4/02
HIGH DENSITY MOUNTING
AC INPUT, PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS354 is an optically coupled isolator
consisting of two infrared light emitting diodes
connected in inverse parallel and NPN silicon
photo transistor in a space efficient dual in line
plastic package.
FEATURES
l Marked as FPA1.
l Current Transfer Ratio MIN. 20%
l Isolation Voltage (3.75kV
l All electrical parameters 100% tested
l Drop in replacement for Sharp PC354
RMS
,5.3kV
)
PK
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
Dimensions in mm
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92856l-AAS/A3
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ABSOLUTE MAXIMUM RATINGS
22/4/02
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
35V
6V
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = ±20mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 35 V IC = 0.1mA
CEO
) 6 V IE = 10uA
ECO
) 100 nA VCE = 20V
CEO
Coupled Current Transfer Ratio (CTR) 20 400 % ±1mA IF , 5V V
CE
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
(SAT)
3750 V
ISO
5300 V
10
5x10
ISO
0.2 V ±20mA IF , 1mA I
RMS
PK
Ω V
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
C
See note 1
See note 1
= 500V (note 1)
IO
DB92856l-AAS/A3
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TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W
Pitch of sprocket holes P0
Distance of compartment
Distance of compartment to compartment P1
F
P2
12 ± 0.3 ( .47 )
4 ± 0.1 ( .15 )
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
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CHARACTERISTIC CURVES
Fig.1 Forward Current vs. Ambient
Temperature
60
50
(mA)
40
F
30
20
Forward current I
10
0 0
-55 0 5025 75 100 125 125250 50 75 100-55
Ambient temperature Ta ( C)
o
Fig.3 Collector-emitter Saturation Voltage
vs. Forward Current
6
5
4
3
1
(sat) (V)
CE
V
Collector-emitter saturation voltage
0
022.5
Ic=0.5mA
1mA
3mA
5mA
7mA
Forward current IF (mA)
10.07.55.0 15.012.5
Ta=25 C
O
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
200
150
100
50
Collector power dissipation Pc (mW)
Ambient temperature Ta ( C)
o
Fig.4 Forward Current vs.
Forward Voltage
500
200
100
(mA)
F
50
20
10
5
Forward current I
2
1
0
o
Ta=75 C
o
50 C
100.5 15 20 25
Forward voltage VF (V)
25 C
-25 C
0 C
o
o
o
30
Fig.5 Current Transfer Ratio vs.
Forward Current
140
120
100
80
60
40
20
Current transfer ratio CTR (%)
0
0.50.1 0.2 1 2 5 10 20 50 100
Forward current IF (mA)
VCE=5V
Ta=25 C
o
Fig.6 Collector Current vs.
Collector-emitter Voltage
50
40
IF =30mA
30
20
10
Collector current Ic (mA)
0
10 102 3 4 5 6 7 8 9
Collecotr-emitter voltage VCE (V)
20mA
Pc(MAX.)
10mA
5mA
1mA
Ta=25 C
o
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
Page 5
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
150
100
50
Relative current transfer ratio (%)
0
20 40 60 80 100
Ambient temperature Ta ( C)
IF=1mA, VCE =5V
Fig.9 Collector Dark Current vs.
vs. Ambient Temperature
10000
(nA)
1000
CEO
Collector Dark Current I
VCE=20V
100
10
1
20 40 60 10080
Ambient Temperature Ta ( C)
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.10
IF=20mA
IC=1mA
0.08
0.06
0.04
0.02
(sat) (V)
CE
V
Collector-emitter saturation voltage
0
o
20 40 60 80
Ambient temperature Ta ( C)
100
o
Fig.10 Response Time vs.
Load Resistance
100
V =2V
CE
50
Ic=2mA
o
Ta=25 C
20
10
5
2
1
Response time ( s)
0.5
0.2
0.1
o
0.1
Load resistance RL (k )
tr
tf
td
ts
0.2 0.5 1 2 5 10
Fig.11 Frequency Response
0
0.2
RL=1k
1 520.5
Frequency f (kHz)
-10
Voltage gain Av (dB)
-20
V =2V
Ic=2mA
o
Ta=25 C
1k
100
100010010
Test Circuit for Response Time
Input
Vcc
Output
Output
td
tr tf
Input
RD
RL
Test Circuit for Frequency Response
Vcc
RD
RL
10%
90%
ts
Output
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
Page 6
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
230 C
200 C
180 C
1 minute
25 C
2 minutes 1.5 minutes 1 minute
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
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