Page 1
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
HIGH DENSITY MOUNTING
HIGH VOLTAGE DARLINGTON
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS2732-1 is an optically coupled isolator
consisting of an infrared light emitting diode
and a high voltage NPN silicon photo
darlington which has an integral base-emitter
resistor to optimise switching speed and
elevated temperature characteristics in a space
efficient dual in line plastic package.
FEATURES
l Marked as FPH1.
l Current Transfer Ratio MIN. 1000%
l High collector-emitter voltage, Vceo=300V
l Isolation Voltage (3.75kV
RMS
,5.3kV
PK
)
l All electrical parameters 100% tested
l Drop in replacement for NEC PS2732-1
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
IS2732-1
DB92861l-AAS/A3
22/4/02
Dimensions in mm
Page 2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 10mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
CEO
) 300 V IC = 0.1mA
Emitter-collector Breakdown (BV
ECO
) 0.1 V IE = 10uA
Collector-emitter Dark Current (I
CEO
) 200 nA VCE = 200V
Coupled Current Transfer Ratio (CTR) 1000 % 1mA IF , 2V V
CE
Collector-emitter Saturation VoltageVCE
(SAT)
1.2 V 20mA IF , 100mA I
C
Input to Output Isolation Voltage V
ISO
3750 V
RMS
See note 1
5300 V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
Ω V
IO
= 500V (note 1)
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
300V
Emitter-collector Voltage BV
ECO
0.1V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
Note 1 Measured with input leads shorted together and output leads shorted together.
DB92861l-AAS/A3
22/4/02
Page 3
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W
12 ± 0.3 ( .47 )
Pitch of sprocket holes P0
4 ± 0.1 ( .15 )
Distance of compartment
F
P2
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1
8 ± 0.1 ( .315 )
Page 4
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forward Current vs. Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs. Forward
0
Collector-emitter Voltage
Fig.6 Collector Current vs.
Current
Fig.5 Current Transfer Ratio vs. Forward
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
Collector power dissipation Pc (mW)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Forward current (mA) Collector-emitter voltage V (V)
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
60
0
50
100
150
200
0
0
0.1
0
10
0
0
5
Ambient Temperature
o
o
Voltage
10mA
1.5mA
1mA
VCE=2V
1000
2000
3000
5000
4
3
2
1
50
40
30
20
10
Ic=5mA
10mA
30mA
50mA
70mA
2 4 531
4000
3mA
IF =0.5mA
100
1
80
60
40
20
1.5mA
CE
7000
6000
1 2 3 4 5
2mA
2.5mA
0.5
1.5
2.5
4.5
3.5
100mA
PC (MAX.)
5mA
Forward current (mA)
0.5
1
100
10
1.91.3
Forward voltage (V)
0.90.7 1.1 1.5 1.7
60 C
100 C
80 C
o
o
o
o
40 C
o
20 C
Forward current I
F
(mA)
Forward current IF(mA)
Collector-emitter saturation voltage
V
CE
(sat) (V)
0 5025 75 100 125-55 -55 125250 50 75 100
Page 5
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Temperature
Fig.10 Response Time vs. Load
CE
vs. Ambient Temperature
0
10
1
Ambient temperature Ta ( C)
Relative current transfer ratio (%)
Collector-emitter saturation voltage
V (sat) (V)
Ambient temperature Ta ( C)
100
1.0
10.1
1000
O
O
Resistance
Voltage gain Av (dB)
-25
0
Frequency f (kHz)
500
Fig.11 Frequency Response
80604020
0.8
0.6
0.4
0.2
-5
-10
-15
-20
1001010.1
VCE=2V
IC=20mA
Ta=25 C
RL=1k 100 10
2
5
10
20
50
100
200
500
Response time (
s)
Load resistance RL (k )
VCE=2V
IC=20mA
Ta=25 C
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Output
Input
Output
Vcc
td
tr tf
ts
90%
10%
Output
Vcc
Ambient temperature Ta ( C)
10080604020
O
1
1000
100
Collector dark current I
CEO
(nA)
tr
tf
td
ts
20
1.0
10040 60 80
0.8
0.6
0.4
0.2
1.2
RD
RL
RL
RD
IF =1mA
VCE=2V
10
VCE=200V
IF=20mA
IC=100mA
O
O
1.2
Page 6
12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes 1.5 minutes 1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
Loading...