Page 1
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
DESCRIPTION
The IS2705-1 is an optically coupled isolator
consisting of two infrared light emitting diodes
connected in inverse parallel and NPN silicon
photo transistor in a space efficient dual in line
plastic package.
FEATURES
l Marked as FPA1.
l Current Transfer Ratio MIN. 20%
l Isolation Voltage (3.75kV
RMS
,5.3kV
PK
)
l All electrical parameters 100% tested
l Drop in replacement for NEC PS2705-1
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
IS2705-1
DB92857l-AAS/A3
22/4/02
HIGH DENSITY MOUNTING
AC INPUT, PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
Dimensions in mm
Page 2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = ±20mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
CEO
) 35 V IC = 0.1mA
Emitter-collector Breakdown (BV
ECO
) 6 V IE = 10uA
Collector-emitter Dark Current (I
CEO
) 100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) 20 400 % ±1mA IF , 5V V
CE
Collector-emitter Saturation VoltageVCE
(SAT)
0.2 V ±20mA IF , 1mA I
C
Input to Output Isolation Voltage V
ISO
3750 V
RMS
See note 1
5300 V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
Ω V
IO
= 500V (note 1)
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ±50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
Note 1 Measured with input leads shorted together and output leads shorted together.
DB92857l-AAS/A3
22/4/02
Page 3
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W
12 ± 0.3 ( .47 )
Pitch of sprocket holes P0
4 ± 0.1 ( .15 )
Distance of compartment
F
P2
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1
8 ± 0.1 ( .315 )
Page 4
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
CHARACTERISTIC CURVES
-55 0 5025 75 100 125 125250 50 75 100-55
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.4 Forward Current vs.
Fig.6 Collector Current vs.
Collector-emitter Voltage
Forward Voltage
Collecotr-emitter voltage VCE (V)
IF =30mA
Ta=25 C
5mA
10mA
1mA
20mA
Pc(MAX.)
o
0.50.1 0.2 1 2 5 10 20 50 100
0
20
40
60
80
100
120
140
10 102 3 4 5 6 7 8 9
0
10
20
30
40
50
0 0
Fig.3 Collector-emitter Saturation Voltage
Fig.5 Current Transfer Ratio vs.
Forward Current
vs. Forward Current
Ambient temperature Ta ( C)
Forward current IF (mA)
Forward current IF (mA)
VCE=5V
Ta=25 C
o
Current transfer ratio CTR (%)
Collector-emitter saturation voltage
V
CE
(sat) (V)
1
0
022.5
3
4
5
6
Collector current Ic (mA)
10.07.55.0 15.012.5
Ta=25 C
Ic=0.5mA
3mA
7mA
5mA
1mA
O
o
20
Forward current I
F
(mA)
1
2
0
5
10
100
200
500
50
Fig.1 Forward Current vs. Ambient
Temperature
Forward current I
F
(mA)
10
20
30
50
40
60
Collector power dissipation Pc (mW)
100
50
150
200
30
Forward voltage VF (V)
100.5 15 20 25
Ambient temperature Ta ( C)
Ta=75 C
50 C
o
o
25 C
-25 C
0 C
o
o
o
o
Page 5
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
CHARACTERISTIC CURVES
CE
V =2V
Ic=2mA
Ta=25 C
tr
tf
ts
td
0
Response time ( s)
Relative current transfer ratio (%)
Ambient temperature Ta ( C)
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Ambient temperature Ta ( C)
Fig.10 Response Time vs.
Fig.9 Collector Dark Current vs.
vs. Ambient Temperature
Ambient Temperature Ta ( C)
Fig.11 Frequency Response
Frequency f (kHz)
Voltage gain Av (dB)
V =2V
Ic=2mA
Ta=25 C
-20
o
20 40 60 80 100
50
100
150
o
0
o
100
0.02
0.04
0.06
0.08
0.10
0.1
0.1
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
20
50
100
o
20 40 60 10080
o
0.2
-10
0
1 520.5
Load Resistance
Input
Output
Input
Output
Vcc
td
tr tf
ts
90%
10%
Output
Vcc
Test Circuit for Response Time
Test Circuit for Frequency Response
100010010
20 40 60 80
IF=20mA
IC=1mA
IF=1mA, VCE =5V
Collector Dark Current I
CEO
(nA)
RL=1k
1k
100
RD
RL
RD
RL
Load resistance RL (k )
Collector-emitter saturation voltage
V
CE
(sat) (V)
1
10
VCE=20V
10000
1000
100
Page 6
12/07/01 Appendix to Mini Flat Pack FPA-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes 1.5 minutes 1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
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