ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
DB92844l-AAS/A3
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS181 is an optically coupled isolator
consisting of an infrared light emitting diode and
NPN silicon photo transistor in a space efficient
dual in line plastic package.
FEATURES
l Marked as FPT1.
l Current Transfer Ratio MIN. 50%
l Isolation Voltage (3.75kV
RMS
,5.3kV
PK
)
l All electrical parameters 100% tested
l Drop in replacement for Toshiba TLP181
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
IS181
22/4/02
Dimensions in mm
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA
Reverse Voltage (VR) 4 V IR = 10µA
Reverse Current (IR) 10 µA VR = 4V
Output Collector-emitter Breakdown (BV
CEO
) 35 V IC = 0.1mA
Emitter-collector Breakdown (BV
ECO
) 6 V IE = 10µA
Collector-emitter Dark Current (I
CEO
) 100 nA VCE = 20V
Coupled Current Transfer Ratio (CTR) 50 600 % 5mA IF , 5V V
CE
Optiional CTR Grades: IS181A 80 160 % 5mA I
F
, 5V V
CE
IS181B 130 260 % 5mA I
F
, 5V V
CE
IS181C 200 400 % 5mA I
F
, 5V V
CE
IS181D 300 600 % 5mA I
F
, 5V V
CE
Collector-emitter Saturation VoltageVCE
(SAT)
0.2 V 20mA IF , 1mA I
C
Input to Output Isolation Voltage V
ISO
3750 V
RMS
See note 1
5300 V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
Ω V
IO
= 500V (note 1)
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 170mW
(derate linearly 2.26mW/°C above 25°C)
Note 1 Measured with input leads shorted together and output leads shorted together.
DB92844l-AAS/A3
22/4/02
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
TAPING DIMENSIONS
Description Symbol Dimensions in mm ( inches )
Tape wide W
12 ± 0.3 ( .47 )
Pitch of sprocket holes P0
4 ± 0.1 ( .15 )
Distance of compartment
F
P2
5.5 ± 0.1 ( .217 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1
8 ± 0.1 ( .315 )
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forword Current Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
0
-55
Ta=75 C
50 C
25 C
0 C
-25 C
Ta=25 C
Pc(MAX.)
5mA
10mA
20mA
vs. Ambient Temperatute
Ambient temperature Ta ( C)Ambient temperature Ta ( C)
Collector Power dissipation Pc (mW)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
CE
Ic=0.5mA
1mA
3mA
7mA
5mA
Ta=25 C
Collecotr-emitter saturation voltage
V (sat) (V)
Voltage
o
o
o
O
o
o
o
o
o
o
125 0-55 12525 50 75 100
10
20
30
40
50
60
0
50
100
150
200
0
1
0
0
15
1
2
3
4
5
6
0.5
1.0
1.5 2.0 2.5 3.0
2
5
10
20
50
100
200
500
0
1
0
02 5 10 20 50
20
40
60
80
100
120
140
160
180
200
1 2 3 4 5 6 7 8 9
10
30
50
105
20
40
25mA
15mA
Collector-emitter voltage VCE(V)Forward current IF (mA)
Forward current IF (mA) Forward voltage VF (V)
Forward current I
F
(mA)
Forward current I
F
(mA)
VCE=5V
Ta=25 C
IF=30mA
1007550250
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
CHARACTERISTIC CURVES
tr
tf
td
ts
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Response Time vs. Load
Fig.11 Frequency Response
0
CE
vs. Ambient Temperature
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
Response time ( s)
Relative current transfer ratio (%)
Voltage gain Av (dB)
Collector-emitter saturation voltage
V (sat) (V)
o
o
o o
o
20 40 60 80 100
50
100
150
0
20 40 80 100
0.2
0.0520 40 60 80 100 0.1 0.2 0.5 1 2 5 10
0.5
1
2
5
10
20
50
100
200
500
0.5
20
10
0
2 10 100 500
Resistance
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
0.02
0.04
0.06
0.08
0.10
1 5 20 50
60
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Input
Vcc
ts
Output
Output
tr
Output
Vcc
td
tf
10%
90%
Load resistance RL (k )
Collector dark current I
CEO
(nA)
VCE=20V
IF =5mA
VCE=2V
IF =20mA
IC=1mA
VCE=2V
IC=2mA
Ta=25 C
R
D
RL
RD
RL
RL=10kΩ
1kΩ
100
Ω
VCE=2V
IC=2mA
Ta=25 C
1
10
10000
1000
100
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes 1.5 minutes 1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).
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