Page 1
PD - 91308A
IRLZ34NS/L
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ34NS)
l Low-profile through-hole (IRLZ34NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
HEXFET® Power MOSFET
D
R
DS(on)
V
DSS
= 55V
= 0.035Ω
ID = 30A
S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
2
D Pak
TO-262
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34NL) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 68 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 110
Linear Derating Factor 0.45 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 110 mJ
Avalanche Current 16 A
Repetitive Avalanche Energy 6.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 2.2
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
°C/W
°C
5/12/98
Page 2
IRLZ34NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.035 VGS = 10V, ID = 16A
Static Drain-to-Source On-Resistance
––– ––– 0.046 Ω VGS = 5.0V, ID = 16A
––– ––– 0.060 VGS = 4.0V, ID = 14A
Gate Threshold Voltage 1. 0 ––– 2 .0 V VDS = VGS, ID = 250µA
Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 16A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
VGS = 16V
Total Gate Charge ––– ––– 25 ID = 16A
Gate-to-Source Charge ––– ––– 5.2 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.9 ––– VDD = 28V
Rise Time ––– 100 ––– ID = 16A
Turn-Off Delay Time ––– 21 ––– RG = 6.5Ω, VGS = 5.0V
ns
Fall Time ––– 29 ––– RD = 1.8Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 880 ––– VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 94 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
30
110
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 76 110 ns TJ = 25°C, IF = 16A
Reverse Recovery Charge ––– 190 290 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
Notes:
I
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L =610µH
DD
RG = 25Ω, I
= 16A. (See Figure 12)
AS
≤ 16A, di/dt ≤ 270A/µs, V
SD
DD
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ34N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
≤ V
(BR)DSS
,
Page 3
IRLZ34NS/L
)
A
)
A
A
A
1000
VGS
TO P 15V
1 2V
1 0V
8 .0V
6 .0V
4 .0V
3 .0V
100
BOTTOM 2.5V
10
1
D
I , Dra in -to -S o u rc e Cu rr en t (A)
2.5V
20µs PULSE WIDTH
T = 25°C
0.1
0.1 1 10 1 00
V , D ra in -to -S o u rc e V o ltage (V
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTTOM 2.5V
10
2.5V
1
D
I , D r ain -to -Sou rc e C u r ren t ( A )
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
V , Dra in-t o-So u rc e V o ltage (V
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 2 7A
D
100
10
1
D
I , Dra in-to -S o urc e C u rre nt (A )
0.1
2345678910
T = 25°C
J
T = 175°C
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate -to-S o urce Vo ltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Norm aliz ed)
1.0
0.5
DS(on)
R , Dra in -to -S o u rc e On R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T empe rature ( °C )
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 1 0 V
GS
Page 4
IRLZ34NS/L
)
A
)
A
A
)
A
g
1400
1200
1000
800
600
C, Capacitance (pF)
400
200
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
is s gs gd d s
C = C
rss g d
C = C + C
C
oss ds gd
iss
C
oss
C
rss
V , Drai n-to -So urce Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 16 A
D
V = 44 V
DS
V = 28 V
DS
V , G a te-to - S ou r ce V o lta g e (V)
12
GS
9
6
3
FOR TEST CIRCUIT
0
0 4 8 12 16 20 24 28 32
Q , T ota l Ga te C h a rge (nC
G
SEE FIG URE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OP ER A T IO N IN T HIS A R E A L IMITE D
BY R
DS(on)
100
T = 175°C
J
T = 25°C
10
SD
I , Re ve r se D r ain Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-to-Drain Voltage (V)
SD
J
V = 0V
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10
D
I , D rain C u rr ent ( A )
T = 25 °C
C
T = 17 5 °C
J
le Pulse
Sin
1
1 10 100
V , Dra in-t o-Sou r ce Vo ltage (V
DS
Fig 8. Maximum Safe Operating Area
10µs
100µs
1ms
10ms
Page 5
IRLZ34NS/L
R
D.U.T.
D
+
V
-
DD
40
30
V
DS
V
GS
R
G
5.0V
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
I , Drain Current (A)
10
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
10
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRLZ34NS/L
A
)
D.U.T .
I
AS
L
0.01Ω
+
V
DD
-
R
5.0 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
250
200
150
100
50
AS
V = 25 V
E , S ing le Puls e A va lan c h e E n erg y ( mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
I
TO P 6.6A
11A
BOTTOM 16A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same T ype as D.U.T .
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
+
V
DS
-
Page 7
IRLZ34NS/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
Driver Gate Drive
P.W.
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
-
VGS=10V
V
DD
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Diode Recovery
dv/dt
Fig 14. For N-Channel HEXFETS
di/dt
V
DD
I
SD
Page 8
IRLZ34NS/L
A
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.2 5 ( .0 10) M B A M
Part Marking Information
D2Pak
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIER
LOG O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1 M
PART NUM B ER
DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
Page 9
Package Outline
TO-262 Outline
IRLZ34NS/L
Part Marking Information
TO-262
Page 10
IRLZ34NS/L
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.3 68 (.0145)
0.3 42 (.0135)
FEED D IRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COM FO R M S TO E IA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HU B.
4. INCLUDES FLAN GE DISTORTION @ OUTER EDGE.
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
15.42 (.609)
15.22 (.601)
27.40 (1.079)
23.90 (.941)
4
26.4 0 (1.039)
24.40 (.961 )
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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