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PD - 9.1357A
TO-220AB
PRELIMINARY
IRLZ24N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
I
DM
PD @TC = 25°C Power Dissipation 45 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
T
J
T
STG
Pulsed Drain Current 72
Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 68 mJ
Avalanche Current 11 A
Repetitive Avalanche Energy 4.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
D
V
= 55V
DSS
DS(on)
ID = 18A
= 0.06Ω
R
S
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case –––– –––– 3.3
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62
Parameter Min. Typ. Max. Units
11/6/96
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IRLZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.061 – –– V/° C Reference to 25°C, ID = 1mA
J
––– ––– 0.060 VGS = 10V, ID = 11A
Static Drain-to-Source On-Resistance
––– ––– 0.075 Ω V
= 5.0V, ID = 11A
GS
––– ––– 0.105 VGS = 4.0V, ID = 9.0A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
µA
nA
Total Gate Charge ––– –– – 15 ID = 11A
Gate-to-Source Charge –– – ––– 3.7 nC V
DS
= 44V
Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.1 ––– V
Rise Time ––– 74 ––– ID = 11A
Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V
ns
DD
= 28V
Fall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 – ––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 480 ––– VGS = 0V
Output Capacitance ––– 130 – –– pF VDS = 25V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 18
A
––– ––– 72
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A
Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
D
G
S
Specification changes
Rev. # Parameters Old spec. New spec. Comments Revision Date
1V
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 790µH
DD
RG = 25Ω, I
(Max.) ±20 ±16 Decrease V
GS
I
≤ 11A, di/dt ≤ 290A/µs, V
SD
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 11A. (See Figure 12)
AS
Max). Specification 4/29/96
GS (
DD
≤ V
(BR)DSS
,
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IRLZ24N
100
VGS
TO P 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
D
I , Drain- to-S o urce C u rrent ( A)
2.5V
20µs PULSE W IDTH
T = 25°C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
T = 25°C
J
T = 175°C
J
10
100
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
10
2.5V
1
D
I , Drain- to-S o urce C u rrent ( A)
20µs PULSE WIDTH
T = 175°C
A
0.1
0.1 1 10 100
V , Dra in-to-So urc e V olta ge (V )
DS
J
A
Fig 2. Typical Output Characteristics
3.0
I = 18 A
D
2.5
2.0
1
D
I , Dr a in-to-So u rce Cu rrent ( A)
0.1
2345678910
V , Ga te-to-So urce Voltage (V )
GS
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
(No rm alized)
1.0
0.5
DS(on)
R , Dra in-to -S ourc e On R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tion Tempe ratur e ( °C )
J
V = 1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLZ24N
800
600
400
V = 0V, f = 1M Hz
GS
C = C + C , C SHO RTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, C apac itance (pF)
200
C
rs s
0
1 10 100
V , Dr ain-to-Sou rce Volt a ge (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I = 11 A
V , Gate-to-Source Voltage (V )
12
9
6
3
GS
D
V = 44V
DS
V = 28V
DS
FOR TEST CIRCUIT
A
0
0 4 8 12 16 20
Q , Total Ga te C harg e (nC)
G
SEE FIGURE 13
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O PERA TION IN T HIS AREA L IMI TED
BY R
DS(on)
T = 175°C
J
10
SD
I , Rev ers e Dr ain C u rren t (A)
1
0.4 0.8 1.2 1.6 2.0
V , Source-to-Drain Voltage (V)
SD
T = 25 °C
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10µs
10
D
I , Drain Cu rren t (A)
T = 2 5°C
C
T = 1 75°C
J
A
Single Pulse
1
1 10 100
V , Drain-to-So urc e Vo ltag e (V)
DS
100µs
1ms
10ms
A
Fig 8. Maximum Safe Operating Area
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+
-
20
16
12
8
D
I , Drain Cu rren t (A mps )
4
0
25 50 75 100 125 150 175
T , C ase T emperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
D.U.T.
D
V
DD
V
DS
V
GS
R
G
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
A
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.1
Thermal Response (Z )
0.01
0.01
S INGL E PU L S E
(THERMAL RESPONSE)
No te s :
1. D u ty fa c to r D = t / t
2. P ea k T = P x Z + T
0.00001 0.0001 0.001 0.01 0.1 1
t , Re ctangular Pulse Du ration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
J
DM
P
DM
12
thJ C
t
1
t
2
C
A
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IRLZ24N
D.U.T.
I
AS
L
0.01Ω
+
V
DD
-
R
5.0 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
140
120
100
80
60
40
20
AS
V = 25V
E , Single Puls e Avalanche E nergy (m J)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TOP 4.5A
7.8A
BOTTOM 11A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
A
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
Page 7
+
-
Peak Diode Recovery dv/dt Test Circuit
IRLZ24N
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
P.W.
Period
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
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IRLZ24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.41 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1 0.29 (.40 5)
4
1 2 3
6.4 7 (.255)
6.1 0 (.240)
1.15 (.0 45)
MIN
4.0 6 (.160)
3.5 5 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - SOURCE
4 - D R A IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO NIN G & TO L ER AN C ING P ER AN S I Y 14 .5M , 198 2. 3 O U TL INE C O N FO R M S T O JE D E C OU T LIN E TO -2 20 -AB .
2 CO NTR OLLING D IMENS IO N : INCH 4 HEATSIN K & LEAD MEASURE MENTS DO NOT INCLUDE BURRS .
2X
Part Marking Information
TO-220AB
EXAMPL E : THIS IS AN IRF1010
W ITH ASSEMBLY
L O T C O DE 9 B1 M
0.93 (.037)
3X
0.69 (.027)
0 .3 6 (.01 4) M B A M
INTERNATION AL
R E CTIFIER
L O GO
ASSEMBLY
LO T COD E
IRF1010
9246
9B 1M
0.5 5 (.022)
3X
0.4 6 (.018)
2.92 (.115)
2.64 (.104)
A
PART NUM BER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/96
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