Page 1
PD - 9.903A
Document Number: 90415
www.vishay.com
1
IRLZ14S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRLZ14S)
l Low-profile through-hole (IRLZ14L)
l 175°C Operating Temperature
l Fast Switching
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ14L) is available for lowprofile applications.
G
2
D Pa k
D
S
V
DSS
R
DS(on)
I
TO-262
= 60V
= 0.20Ω
= 10A
D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10
@ TC = 100°C Continuous Drain Current, VGS @ 10V 7.2 A
I
D
I
DM
PD @TA = 25°C Power Dissipation 3.7 W
PD @TC = 25°C Power Dissipation 43 W
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 40
Linear Derating Factor 0.29 W/°C
Gate-to-Source Voltage ± 10 V
Single Pulse Avalanche Energy 68 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
°C
Thermal Resistance
R
θJC
R
θJA
Parameter Typ. Max. Units
Junction-to-Case ––– 3.5
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
°C/W
8/25/97
Page 2
IRLZ14S/L
Document Number: 90215
www.vishay.com
2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.2 V
––– – –– 0.28
Ω
= 5.0V, ID = 6.0A
GS
VGS = 4.0V, ID = 5.0A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.5 ––– ––– S VDS = 25V, ID = 6.0A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 10 0 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
= 10V
GS
nA
VGS = -10V
Total Gate Charge ––– ––– 8.4 ID = 10A
Gate-to-Source Charge ––– ––– 3.5 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– –– – 6.0 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time –– – 9.3 ––– VDD = 30V
Rise Time ––– 110 ––– ID = 10A
Turn-Off Delay Time –– – 1 7 ––– RG = 12Ω
Fall Time ––– 26 ––– RD = 2.8Ω, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 790µH
DD
RG = 25Ω, I
I
≤ 10A, di/dt ≤ 90A/µs, V
SD
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
10
40
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 10A, VGS = 0V
Reverse Recovery Time – – – 93 130 ns TJ = 25°C, IF = 10A
Reverse Recovery Charge ––– 340 650 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ14 data and test conditions
= 10A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
,
D
S
Page 3
IRLZ14S/L
Document Number: 90215
www.vishay.com
3
Page 4
IRLZ14S/L
Document Number: 90215
www.vishay.com
4
Page 5
IRLZ14S/L
Document Number: 90215
www.vishay.com
5
Page 6
IRLZ14S/L
Document Number: 90215
www.vishay.com
6
Page 7
IRLZ14S/L
+
-
Document Number: 90215
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
P.W.
Period
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRLZ14S/L
Document Number: 90215
www.vishay.com
8
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : I NCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010) M B A M
Part Marking Information
D2Pak
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASS IGNM ENT S
1 - GATE
2 - DRAIN
3 - SOU RC E
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
REC TIFIER
LO GO
ASSEMBLY
LOT CODE
F530S
9246
9B 1M
PART NUMBER
A
DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
Page 9
Package Outline
Document Number: 90215
www.vishay.com
9
TO-262 Outline
IRLZ14S/L
Part Marking Information
TO-262
Page 10
IRLZ14S/L
Document Number: 90215
www.vishay.com
10
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.5 0 (. 532 )
12.8 0 (. 504 )
330.0 0
(14.17 3)
M A X .
NOT ES :
1. CO MF OR M S TO EIA -418 .
2. CONTRO LLIN G DIMEN SION: MILLIME TER .
3. DIMENS ION M EAS URE D @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.6 0 (.457 )
11.4 0 (.449 )
1.75 (.0 69 )
1.25 (.0 49 )
16.10 (.634)
15.90 (.626)
15.4 2 (.609 )
15.2 2 (.601 )
27.4 0 (1 .079 )
23.9 0 (.9 41)
4
26.40 (1. 03 9)
24.40 (.961)
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.0 0 (2 .36 2)
MIN .
30.4 0 (1 .19 7)
MAX .
4
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 8/97
Page 11
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Loading...