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PD - 94404
SMPS MOSFET
IRLR8203
IRLU8203
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
l Fully Characterized Avalanche Voltage
GS
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 76 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 140 W
PD @TC = 100°C Maximum Power Dissipation 69 W
Linear Derating Factor 0.92 W/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 120
Junction and Storage Temperature Range -55 to + 175 °C
V
DSS
R
DS(on)
max I
30V 6.8mΩ 110A
D-Pak I-Pak
IRLR8203 IRLU8203
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 1.09
Junction-to-Ambient (PCB mount)* ––– 50 °C/W
Junction-to-Ambient ––– 110
Notes through are on page 10
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IRLR/U8203
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA
––– 5.6 6.8 V
––– 7.1 9.0 VGS = 4.5V, ID = 12A
mΩ
= 10V, ID = 15A
GS
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
V
= 24V, VGS = 0V
DS
= 20V
GS
V
= -20V
GS
Forward Transconductance 35 ––– ––– SVDS = 15V, ID = 12A
Total Gate Charge ––– 33 50 ID = 12A
Gate-to-Source Charge ––– 5.7 8.5 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 17 25 VGS = 4.5V
Output Gate Charge ––– 23 34 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 15 ––– VDD = 15V
Rise Time ––– 99 ––– ID = 12A
Turn-Off Delay Time ––– 30 ––– RG = 6.8Ω
ns
Fall Time ––– 69 ––– VGS = 4.5V
Input Capacitance ––– 2430 ––– VGS = 0V
Output Capacitance ––– 1200 ––– VDS = 15V
Reverse Transfer Capacitance ––– 250 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 310 mJ
Avalanche Current ––– 30 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
110
120
showing the
A
p-n junction diode.
G
––– 0.75 1.3 V TJ = 25°C, IS = 12A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V
Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 12A, VR=15V
Reverse Recovery Charge ––– 62 92 nC di/dt = 100A/µs
Reverse Recovery Time ––– 49 74 ns TJ = 125°C, IF = 12A, VR=15V
Reverse Recovery Charge ––– 67 100 nC di/dt = 100A/µs
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D
S
Page 3
IRLR/U8203
(
)
1000
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
2.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
2.5V
10
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
30A
I =
D
)
(Α
100.00
, Drain-to-Source Current
D
I
10.00
2.0 3.0 4.0 5.0
TJ = 25°C
TJ = 175°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
C
Vs. Temperature
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IRLR/U8203
10000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
Coss
1000
C, Capacitance(pF)
Crss
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
SHORTED
ds
6
D
I =
12A
5
4
3
2
GS
1
V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
V = 24V
DS
V = 15V
DS
V = 6V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
100
LIMITED BY RDS(on)
100
°
T = 175 C
J
10
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
, Drain-to-Source Current (A)
Tc = 25°C
D
I
Tj = 175°C
Single Pulse
1
0 1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µsec
1msec
10msec
Forward Voltage
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120
100
IRLR/U8203
R
D.U.T.
D
+
V
DD
-
V
LIMITED BY PACKAGE
R
80
DS
V
GS
G
4.5V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
D
I , Drain Current (A)
20
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
thJC
1
D = 0.50
0.20
P
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8203
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
DD
800
TOP
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting Tj, Junction Temperature ( C)
BOTTOM
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
12A
21A
30A
Current Regulator
Same Type as D.U.T.
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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IRLR/U8203
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRLR/U8203
IRFU120
916A
LOT CODE
ASSEMBLY
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFR120
YEAR 9 = 1999
DATE C ODE
LINE A
WEEK 16
IN THE ASSE MBLY LINE " A"
ASSE MBLED ON WW 16, 1999
LOT C ODE 1234
PART NUMBER
INTERNATIONAL
LOGO
RECT IFIER
3412
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
5.46 (.215)
5.21 (.205)
1.02 (.040)
1.64 (.025)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
- B -
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
2.38 (.094)
2.19 (.086)
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSION ING & TO LE RANCING PE R ANSI Y 14.5M, 1982 .
2 CONTROLLING DIMENSION : INCH.
3 C O N F O RMS TO JEDE C O U T LINE TO-25 2 AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
M IN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - S O U R CE
4 - D R A IN
D-Pak (TO-252AA) Part Mar king Information
8 www.irf.com
Page 9
I-Pak (TO-251AA) Package Outline
WEE K 19
LINE A
YEAR 9 = 1999
DATE C ODE
PART NUMBER
IN THE ASSEMBLY LINE "A"
A SSEMBLED ON WW 19, 1999
LOT CODE 5678
RECT IFIER
LOGO
INTERNATIONAL
ASSEMBLY
LOT CODE
56 78
EXAMPLE:
WIT H AS S E MBL Y
THIS IS AN IRFR 120
IRFU120
919A
Dimensions are shown in millimeters (inches)
IRLR/U8203
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
2X
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.2 45)
5.97 (.2 35)
9.65 (.380)
8.89 (.350)
0.89 (.0 35)
3X
0.64 (.0 25)
0.25 ( .01 0) M A M B
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CON F ORM S TO JE DEC OUTLINE TO-2 5 2A A.
4 DIME N S ION S SHOW N ARE B E F O RE SOLD E R DIP,
S O LD E R DIP MAX. +0.16 (.006).
1.14 (.04 5)
0.89 (.03 5)
0.58 (.023)
0.46 (.018)
I-Pak (TO-251AA) Part Marking Information
LEAD ASSIGNMEN TS
1 - G ATE
2 - D RAIN
3 - SOURCE
4 - D RAIN
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IRLR/U8203
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHO W N IN MILLIMETERS ( INCHES ).
3. OUTLINE CO NFORM S TO EIA-481 & EIA-541.
13 INCH
NOTES :
1. OUTLINE CO NFO RMS TO EIA-481.
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
TRR
16 mm
TRL
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 0.68mH
J
= 30A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
10 www.irf.com
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