Datasheet irlr3802 Datasheet

PD - 94536

IRLR3802 IRLU3802

Applications

l High Frequency 3.3V and 5V input Point-

of-Load Synchronous Buck Converters

l Power Management for Netcom,

V

DSS

12V 8.5mΩ 27nC

HEXFET® Power MOSFET

R

DS(on)

max Q

Computing and Portable Applications.

Benefits

l Ultra-Low Gate Impedance l Very Low R l Fully Characterized Avalanche Voltage

and Current

DS(on)

D-Pak I-Pak IRLR3802 IRLU3802

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 84  ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 60 A I

DM

PD @TC = 25°C Maximum Power Dissipation 88 W PD @TC = 100°C Maximum Power Dissipation 44 W

Linear Derating Factor 0.59 mW/°C

TJ , T

STG

Drain-Source Voltage 12 V Gate-to-Source Voltage ± 12 V

Pulsed Drain Current 320

Junction and Storage Temperature Range -55 to + 175 °C

g

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

R

θJA

Junction-to-Case ––– 1.7 Junction-to-Ambient (PCB mount)* ––– 40 °C/W Junction-to-Ambient ––– 110

Notes  through  are on page 9

www.irf.com 1

8/22/02

IRLR/U3802

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

BV

∆ΒV

DS(on)

V

GS(th)

∆V

I

DSS

I

GSS

g

fs

Q

g

Q Q Q Q Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

DSS

GS(th)

gs1 gs2 gd godr

Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.009 ––– V/°C Reference to 25°C, ID = 1mA 

––– 6.5 8.5 VGS = 4.5V, ID = 15A  ––– ––– 30 VGS = 2.8V, ID = 12A

Gate Threshold Voltage 0.6 ––– 1.9 V VDS = VGS, ID = 250µA

/∆T

Gate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C

J

Drain-to-Source Leakage Current

––– ––– 100

––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 Forward Transconductance 31 ––– ––– S VDS = 6.0V, ID = 12A Total Gate Charge ––– 2 7 4 1 Pre-Vth Gate-Source Charge ––– 3.6 ––– VDS = 6.0V Post-Vth Gate-Source Charge ––– 2.0 ––– VGS = 5.0V Gate-to-Drain Charge ––– 10 – –– nC ID = 6.0A Gate Charge Overdrive ––– 11 – –– See Fig.16 Switch Charge (Q

gs2 + Qgd

) ––– 12 ––– Output Charge ––– 28 ––– nC VDS = 10V, VGS = 0V Turn-On Delay Time ––– 11 ––– VDD = 6.0V, VGS = 4.5V Rise Time ––– 14 ––– ns ID = 12A Turn-Off Delay Time ––– 21 ––– Clamped Inductive Load Fall Time ––– 17 ––– Input Capacitance ––– 2490 ––– VGS = 0V Output Capacitance ––– 2150 ––– pF VDS = 6.0V Reverse Transfer Capacitance ––– 530 ––– ƒ = 1.0MHz

mΩR

VDS = 9.6V, VGS = 0V

µA

nA

VGS = -12V

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 300 mJ Avalanche Current ––– 20 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

Diode Forward Voltage

––– –––

––– ––– ––– 0.81 1.2 V TJ = 25°C, IS = 12A, VGS = 0V 

––– 0.65 ––– TJ = 125°C, IS = 12A, VGS = 0V 

84

320

showing the

A

p-n junction diode.

G

Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 12A, VR=20V Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs



Reverse Recovery Time ––– 50 75 ns TJ = 125°C, IF = 12A, VR=20V Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRLR/U3802

1000

)

100

A

(

t

n

e

r

u C

10

e

c

r

u

o S

-

1

o

t

-

n

i

a

r D

,

0.1

D

I

VGS

TOP 10V

4.5V

3.5V

2.5V

2.3V

2.0V

1.8V B OTT OM 1.5V

1.5V

20µs PULSE WIDTH

0.01

0.1 1 10

Tj = 25°C

VDS, Dr ain- to-Source Voltage (V)

1000

)

Α

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

0

1.0 2.0 3.0 4.0 5.0 6.0

TJ = 25°C

TJ = 175°C

V

= 5.0V

DS

20µs PULSE WIDTH

VGS, Gate-t o-Source Voltage (V)

1000

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

VGS

TOP 10V

4.5V

3.5V

2.5V

2.3V

2.0V

1.8V BO TTOM 1.5V

1.5V

20µs PULSE W IDTH

0.1

0.1 1 10

Tj = 175°C

VDS, Dra in- to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

1.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 84A V

= 4.5V

GS

)

d

e

z

i

1.0

l

a m

r

o N

(

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (° C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRLR/U3802

100000

) F

10000

p

( e

c

n

a

t

i

c

a

p

a C

1000

, C

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

Ciss

Coss

Crss

iss

C

rss

C

oss

VDS, Dr ain- to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

(

t

100.0

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

TJ = 175°C

10.0

1.0

0.1

0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-toDrain Voltage (V)

TJ = 25°C

12

SHORTED

ds

gd

) V

( e

g

a

t

l

o V

e

c

r

u

o S

-

o

t

-

e

t

a G

, V

ID= 6.0A

10

8

6

4

S

2

G

0

0 1020304050

Q

VDS= 12V

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

GS

= 0V

1000

) A

(

t

n

e

r

100

u C

e

c

r

u

o S

-

o

t

-

n

10

i

a

r D ,

D

Tc = 25°C

I

Tj = 175°C Single Pulse

1

0 1 10 100

V

OPERATION IN THIS AREA LIMITED BY RDS(on)

, Drain-toSource Voltage (V)

DS

100µs ec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

100

LIMITED BY PACKAGE

80

) A

(

t

n

60

e

r

u C n

i

a

40

r D

,

D

I

20

0

25 50 75 100 125 150 175

TC , Case Temper ature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRLR/U3802

L

t

d(off)

D.U.T

D

V

DD

t

r

V

DS

V

GS

Pulse Width < 1µs

Duty Factor < 0.1%

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

f

Fig 10b. Switching Time Waveforms

10

)

C

1

D = 0.50

0.20

0.10

0.1

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

Z (

e

s

n

o

p

s

e R

l

a

m

r

e

h T

J

h

t

0.001

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRLR/U3802

A

15V

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

1.4

5000

)

J m

( y

g

4000

r

e

n E

e

h

c

3000

n

a

l

a

v A

e

2000

s

l

u P

e

l

g

n

i

1000

S

, S A

E

0

25 50 75 100 125 150 175

I

TOP 8.0A 14A BOTTOM 20A

Starting TJ, Junction Temperature (° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

D

) V

(

1.2

e

g

a

t

l

o

1.0

V d

l

o

h

s

0.8

e

r

h

t e

t

a

0.6

G

)

h

t

( S

0.4

G

V

0.2

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

12V

V

GS

Fig 14. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

3mA

Current Sampling Resistors

+

D.U.T.

I

G

V

-

I

D

TJ , Temperature ( °C )

Fig 13. Threshold Voltage Vs. Temperature

6 www.irf.com

DS

IRLR/U3802

+

-

Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

D.U.T

+



-

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

+



V

DD

R

G

• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test

G

Re-Applied Voltage

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Id

Vds

Vgs

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 16. Gate Charge Waveform

www.irf.com 7

IRLR/U3802

9

R

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

5.46 (.215)

5.21 (.205)

1.02 (.040)

1.64 (.025)

1.52 (. 060)

1.15 (. 045)

1.14 (.045)

2X

0.76 (.030)

2.28 (.090)

6.73 (.265)

6.35 (.250)

- A -

4

1 2 3

1.27 (.050)

0.88 (.035)

6.22 (.245)

5.97 (.235)

- B -

0.89 (.035)

3X

0.64 (.025)

0.25 (.010) M A M B

4.57 (. 180)

2.38 (.094)

2.19 (.086)

10.42 (.410)

9.40 (.370)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSIO N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

0.51 (.020) MIN.

0.58 (. 023)

0.46 (. 018)

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

D-Pak (TO-252AA) Part Marking Information

S

I

H

A

X

M

E

8 www.irf.com

T

A

N W L A I

S A

S

E

I

H

T

O

D

E

O

C

S

E

M

B

E

L

E

H

A

T

S

N

S

P

L

E

:

0

2

F

1

I

R

M

L

B

Y

4

3

2

1

O

D

W

N

W

E

M

L

B

L

Y

I

N

9

1

,

6

1

"

A

E

"

N

R

E

T

I

N

C

E

R

O

L

A

L

N

A

I

T

O

E

R

I

F

I

T

O

G

A

S

M

S

L

O

Y

E

L

B

E

O

D

C

T

I

R

F

U

2

1

0

9

1

A

6

3

2

4

1

D Y W L

P

A

E

N

I

M

U

B

N

T

A

R

E

D

E

O

T

C

=

9

R

1

A

9

E

6

1

E

K

E

A

E

9

I-Pak (TO-251AA) Package Outline

P

A

R

T

N

U

M

B

E

R

Dimensions are shown in millimeters (inches)

IRLR/U3802

5.46 (.215)

5.21 (.205)

1.52 (.060)

1.15 (.045)

- B -

2.28 (.090)

1.91 (.075)

1.14 (.045)

3X

0.76 (.030)

2.28 (.090)

6.73 (.265)

6.35 (.250)

- A -

4

1 2 3

3X

2X

1.27 (.050)

0.88 (.035)

6.22 (.245)

5.97 (.235)

9.65 (.380)

8.89 (.350)

0.89 (.035)

0.64 (.025)

0.25 (.010) M A M B

2.38 (.094)

2.19 (.086)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

NOTES: 1 DIMENSIONING & TOLERANCI NG PER ANSI Y14.5 M, 1982. 2 CONTROLLING DIME NS I O N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

I-Pak (TO-251AA) Part Marking Information

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

E

M

A

X

T

S

I

H

I

P

E

L

:

S

A

T

I

W

H

S

A

S

D

O

C

T

O

L A

S

E

L

B

M E

H

T

A

N

I

S

2

1

R

F

R

0

I

N

M

E

Y

L

B

E

6

5

8

7

E

D

O

N

W

,

9

1

9

1

9

S

E

Y

L

B

M

I

L

E

N

"

A

"

I

E

T

N

R

A

N

T

A

N

O

I

L

R

E

I

F

I

T

C

R

O

G

O

9

L

S

A

S

E

Y

L

B

M

T

O

D

L

O

C

E

0

I

2

1

R

F

U

A

9

1

8

7

6

5

A

D

T

E

D

O

C

Y

E

R

A

=

9

1

9

E

W

E

K

9

1

N

I

L

E

A

www.irf.com 9

IRLR/U3802

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRR

TRL

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

FEED DIRECTION

8.1 ( .318 )

7.9 ( .312 )

16 mm

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

Notes:

Repetitive rating; pulse width limited by



max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 1.4mH

J

= 20A.

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 30A.

* When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrialmarket.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.8/02

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