Page 1
PD - 94266
SMPS MOSFET
IRLR3714
IRLU3714
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 20mΩ 36A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 31 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 47 W
PD @TC = 70°C Maximum Power Dissipation 33 W
Linear Derating Factor 0.31 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 140
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
D-Pak
IRLR3714
max I
I-Pak
IRLU3714
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
Junction-to-Case ––– 3.2
Junction-to-Ambient ––– 50
Junction-to-Ambient (PCB mount) ––– 110
°C/W
Notes through are on page 10
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06/15/01
Page 2
IRLR3714/IRLU3714
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 15 20 V
––– 21 28 VGS = 4.5V, ID = 14A
mΩ
= 10V, ID = 18A
GS
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
V
= 16V, VGS = 0V
DS
VGS = -16V
Forward Transconductance 17 ––– ––– SVDS = 10V, ID = 14A
Total Gate Charge ––– 6.5 9.7 ID = 14A
Gate-to-Source Charge ––– 1.8 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 2.9 ––– VGS = 4.5V
Output Gate Charge ––– 7.1 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 8.7 ––– VDD = 10V
Rise Time ––– 78 ––– ID = 14A
Turn-Off Delay Time ––– 10 ––– RG = 1.8Ω
ns
Fall Time ––– 4.5 ––– VGS = 4.5V
Input Capacitance ––– 670 ––– VGS = 0V
Output Capacitance ––– 470 ––– VDS = 10V
Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 72 mJ
Avalanche Current ––– 14 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
36
–––
–––
140
showing the
A
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
––– 0.88 ––– TJ = 125°C, IS = 18A, VGS = 0V
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 18A, VR=10V
Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs
Reverse Recovery Time ––– 35 53 ns TJ = 125°C, IF = 18A, VR=10V
Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs
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D
S
Page 3
IRLR3714/IRLU3714
10000
1000
100
10
1
, Drain-to-Source Current (A)
D
0.1
I
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
10
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
2.0V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
36A
I =
D
)
(Α
2.0
TJ = 25°C
100.00
TJ = 175°C
10.00
, Drain-to-Source Current
D
I
1.00
2.0 4.0 6.0 8.0 10.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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Page 4
IRLR3714/IRLU3714
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
Coss
100
C, Capacitance(pF)
10
1 10 100
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
SHORTED
ds
15
D
I =
14A
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20
Q , Total Gate Charge (nC)
G
V = 16V
DS
V = 10V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100.00
TJ = 175°C
100
100µsec
10.00
10
1msec
, Reverse Drain Current (A)
1.00
SD
I
0.10
0.0 1.0 2.0 3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
TJ = 25°C
V
GS
= 0V
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10msec
Forward Voltage
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Page 5
IRLR3714/IRLU3714
(
)
40
LIMITED BY PACKAGE
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature
C
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
P
DM
t
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRLR3714/IRLU3714
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(B R)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
DD
150
TOP
120
90
60
30
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
5.9A
10A
14A
°
Current Regulator
Same Type as D.U.T.
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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Page 7
IRLR3714/IRLU3714
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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Page 8
IRLR3714/IRLU3714
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
5.46 (.215)
5.21 (.205)
1.02 (.04 0)
1.64 (.02 5)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
- B -
0.89 (.035 )
3X
0.64 (.025 )
0.25 (.010) M A M B
4.57 (.180)
2.38 (.09 4)
2.19 (.08 6)
10.42 (.410 )
9.40 (.370)
NOTES:
1 DIMENSION ING & TO LERANC ING PER ANSI Y14.5M, 1982 .
2 CONTROLLING DIMENSION : INCH.
3 C O N F O R M S T O J E D E C O U TLINE TO-252AA.
4 DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER D IP M A X. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
M IN.
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - S O U R C E
4 - D R A IN
D-Pak (TO-252AA) Part Marking Information
EXAMPLE:
8 www.irf.com
THIS IS AN IRFR120
WITH ASSEMBLY
LOT C ODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTE R NATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRFU120
12
916A
34
PART NUMBER
DA TE CODE
YEAR 9 = 1999
WEEK 16
LINE A
Page 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
IRLR3714/IRLU3714
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
2X
6.73 (.265)
6.35 (.250)
- A -
4
1 2 3
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
9.65 (.380)
8.89 (.350)
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROL LIN G DIMENS IO N : INC H .
3 CONFORMS TO J EDEC OUT LINE TO- 2 52 AA .
4 DIMENSIO N S SHOW N ARE B EFO R E S OLD ER DIP,
S O LDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
I-Pak (TO-251AA) Part Marking Information
LEAD ASSIGNMENTS
1 - G A TE
2 - D R AIN
3 - S O URC E
4 - D R AIN
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Page 10
IRLR3714/IRLU3714
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
12.1 ( .47 6 )
11.9 ( .46 9 )
NOTES :
1. CONTROLLING DIMENSIO N : MILLIMETER.
2. ALL DIMENSION S ARE SHOW N IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
NOTES :
1. OUTLINE CONFORM S TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
= 25°C, L = 0.69 mH
J
= 14A.
AS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
16.3 ( .641 )
15.7 ( .619 )
FEED DIRECTIO N
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum
allowable junction temperature; Package limitation
current is 30A
8.1 ( .318 )
7.9 ( .312 )
16 mm
16.3 ( .641 )
15.7 ( .619 )
FEED DIR ECTION
Data and specifications subject to change without notice.
These products have been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
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