Datasheet IRLR3705ZTRPBF Specification

PD - 95956A

IRLR3705ZPbF

Features

l

Logic Level

l

Advanced Process Technology

l

Ultra Low On-Resistance

l

175°C Operating Temperature

l

Fast Switching

l

Repetitive Avalanche Allowed up to Tjmax

l

Lead-Free

Description

This HEXFET® Power MOSFET utilizes the latest

G

IRLU3705ZPbF

HEXFET® Power MOSFET

D

V

= 55V

DSS

R

S

DS(on)

ID = 42A

= 8.0mΩ

processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

D-Pak

IRLR3705ZPbF

I-Pak

IRLU3705ZPbF

Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

@ TC = 25°C

I

D

I

DM

PD @TC = 25°C

V

GS

E

AS (Th ermally limited)

E

(Tested )

AS

I

AR

E

AR

T

J

T

STG

Parameter Units

(Silicon Limited)

Continuous Drain Current, V

Continuous Drain Current, V Pulsed Drain Current

Power Dissipation W

Linear Derating Factor W/°C Gate-to-S ource Voltage V

Single Pulse Avalanche Energy

Single P ulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range °C

Soldering Tem perature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

c

c

@ 10V

GS

@ 10V

GS

@ 10V

GS

d

g

(Package Limited)

h

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

Max.

89

63

42

360

130

0.88

± 16

110

190

-55 to + 175

10 lbf

y

in (1.1Nym)

A

mJ

A

mJ

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

JA

θ

R

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

j

ij

j

––– 1.14

––– 40 °C/W

––– 110

HEXFET® is a registered trademark of International Rectifier.

www.irf.com 1

10/01/10

IRLR/U3705ZPbF

ified)

Electrical Characteristics @ TJ = 25°C (unless otherwise spec

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

gfs Forward Transconductance 89 ––– ––– S

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

eff. Effective Output Capacitance ––– 500 –––

C

oss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage 55 ––– ––– V

/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C

Static Drain-to-S ource On-Resistance ––– 6.5 8.0

––– ––– 11

––– ––– 12

Gate Threshold Voltage 1.0 ––– 3.0 V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Total Gate Charge ––– 44 66

Gate-to-Source Charge ––– 13 ––– nC

Gate-to-Drain ("Miller") Charge ––– 22 –––

Turn-On Delay Time ––– 17 –––

Rise Time ––– 150 –––

Turn-Off Delay Time ––– 33 ––– ns

Fall Time –––70–––

Internal Drain Inductance ––– 4.5 ––– Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 2900 –––

Output Capacitance ––– 420 –––

Reverse Transfer Capacitance ––– 230 ––– pF

Output Capacitance ––– 1550 –––

Output Capacitance ––– 320 –––

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 42

(Body Diode) A Pulsed Source Current ––– ––– 360

(Body Diode) Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 21 42 ns

Reverse Recovery Charge ––– 14 28 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

c

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

Ω

m

VGS = 10V, ID = 42A

VGS = 5.0V, ID = 34A

= 4.5V, ID = 21A

V

GS

= VGS, ID = 250µA

V

DS

V

= 25V, ID = 42A

DS

V

= 55V, VGS = 0V

DS

V

= 55V, VGS = 0V, TJ = 125°C

DS

VGS = 16V

V

= -16V

GS

= 42A

I

D

= 44V

V

DS

VGS = 5.0V

e

VDD = 28V

= 42A

I

D

= 4.2

G

Ω

e

R

VGS = 5.0V

nH 6mm (0.25in.)

and center of die contact

VGS = 0V

= 25V

V

DS

ƒ = 1.0MHz

V

= 0V, VDS = 1.0V, ƒ = 1.0MHz

GS

V

= 0V, VDS = 44V, ƒ = 1.0MHz

GS

= 0V, VDS = 0V to 44V

V

GS

Conditions

MOSFET symbol

showing the integral reverse

p-n junction diode. T

= 25°C, IS = 42A, VGS = 0V

J

TJ = 25°C, IF = 42A, VDD = 28V

di/dt = 100A/µs

e

= 1mA

D

e

e e

D

G

S

f

e

2 www.irf.com

IRLR/U3705ZPbF

1000

) A

( t n e

r

100

u C e

c

r u o S

o

t

n

10

i a

r D

,

D

I

2.8V

≤

TOP 12V

BOTTOM 2.8V

60µs PULSE WIDTH

Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000.0

)

Α

(

t n e

r

100.0

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

10.0

TJ = 25°C

V

= 15V

DS

≤ 60µs PULSE WIDTH

1.0

1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

VGS

10V

8.0V

5.0V

4.5V

3.5V

3.0V

TJ = 175°C

1000

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TOP 12V

100

BOTTOM 2.8V

10

VGS

10V

8.0V

5.0V

4.5V

3.5V

3.0V

2.8V

60µs PULSE WIDTH

≤

Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

100

) S

( e

80

c n a

t c u d n

60

o c s n a

r T

40

d

r a

w

r o F ,

20

s

f G

V

380µs PULSE WIDTH

0

0 1020304050607080

ID, Drain-to-Source Current (A)

DS

TJ = 25°C

TJ = 175°C

= 8.0V

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRLR/U3705ZPbF

5000

4000

) F p

( e

3000

c n a

t

i c a p

2000

a C

, C

1000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

oss

= C

gd

ds

C

Ciss

+ Cgd, C

+ C

Coss

Crss

0

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.0

) A

( t

100.0

n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

TJ = 175°C

10.0

TJ = 25°C

1.0

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VSD, Source-to-Drain Voltage (V)

12

SHORTED

ds

gd

ID= 42A

) V

(

10

e g a

t

l o

8

V e

c

r u o

6

S

o

t

e

t

4

a G

,

S G

2

V

VDS= 44V VDS= 28V

VDS= 11V

0

0 20406080100

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

V

GS

= 0V

10000

) A

(

1000

t n e

r

r u

C

100

e c

r u o S

o

t

10

n

i a

r D ,

1

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

1msec

10msec

DC

V

, Drain-toSource Voltage (V)

DS

100µsec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRLR/U3705ZPbF

τ

100

LIMITED BY PACKAGE

80

) A

( t n e

60

r

r u

C n

i a

r

40

D ,

D

I

20

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

10

2.5

e c n a

t s

i s e

R n O

)

e

d

c

r

e

u

z

i

l

o

a

S

-

m

o

r

t

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

ID = 42A

V

= 10V

GS

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

)

C

1

J h

t Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.20

0.1

0.10

0.05

τ

J

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

τ

J

τ

1

Ci= τi/Ri

R

1

2

R

1

2

τ

1

2

τ

2

Ri (°C/W) τi (sec)

τ

C

0.6984 0.000465

0.4415 0.004358

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRLR/U3705ZPbF

A

15V

L

D.U.T

I

AS

Ω

0.01

t

p

R

20V

V

DS

G

GS

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

DRIVER

+

-

V

DD

500

) J

m

( y

g

r

400

e n E

e h c

300

n a

l a v A

e s

200

l u P

e

l g n

i

100

S

, S A

E

0

25 50 75 100 125 150 175

I

TOP

7.0A

BOTTOM

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

D

5.3A

42A

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

0

1K

Fig 13b. Gate Charge Test Circuit

Q

GD

Charge

DUT

2.5

) V

( e

2.0

g a

t

l o V

d

l

1.5

o h s e

r h

t e

1.0

t a

G ) h

t

(

S

0.5

L

G

V

ID = 250µA

ID = 150µA

ID = 50µA

VCC

0.0

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

IRLR/U3705ZPbF

1000

Duty Cycle = Single Pulse

100

)

A

(

t

n

e

r

u

C

10

e

h

c

n

a

l

a

v

A

1

0.1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

120

TOP Single Pulse

)

100

J m

( y

g

r

80

e n E

e h

60

c n a

l a v

40

A ,

R A

E

20

BOTTOM 1% Duty Cycle ID = 42A

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

AS (AR)

= P

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRLR/U3705ZPbF





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

IRLR/U3705ZPbF

D-Pak (TO-252AA) Part Marking Information

EXAMPL E:

THIS IS AN IRFR120 WIT H AS SE MB LY LOT CODE 1234 AS SE MB LED ON WW 16, 2001 IN THE ASS EMBLY LINE "A"

Note: "P" in ass embly line pos ition

in dicates "L ead-F r ee"

"P" in assembly line position indicates "L ead-F ree" q uali fi cati on to the cons umer -l evel

OR

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

IRF R120

12

IRF R120

PART NUMBER

DATE CODE P = DESIGNAT ES L EAD-FRE E

34

P = DESIGNAT ES L EAD-FRE E

YEAR 1 = 2001 WE E K 16 A = AS S E MB L Y S I T E CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 9

PART NUMBER

DATE CODE

116A

YEAR 1 = 2001

3412

WE EK 16 LINE A

PRODUCT (OPTIONAL )

PRODUCT QUALIFIED TO THE CONS UME R LEVEL (OPTI ONAL)

IRLR/U3705ZPbF

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

EXAMPLE :

THIS IS AN IRF U120 WI T H AS S EM BL Y LOT CODE 5678 ASS EMBLED ON WW 19, 2001 IN T HE ASSEMBLY LINE "A"

Note: "P" in assembly line position

in dicates L ead- F ree"

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

IRFU120

56

OR

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

IRFU 120

56 78

PART NUMBER

DATE COD E P = DES IGNATES LEAD-FREE

YEAR 1 = 2001 WE E K 1 9 A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

10 www.irf.com

PART NUMBER

DATE CODE

119A

PRODUCT (OPT IONAL)

YEAR 1 = 2001

78

WE E K 1 9 LINE A

IRLR/U3705ZPbF

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters

TR

TRR TRL

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS ( INCHES ).

3. OUTLINE CONFO RMS TO EIA-481 & EIA-541.

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

FEED DIRECTION

Notes:

Repetitive rating; pulse width limited by



max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.12mH

Jmax

= 42A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C  Limited by T

16 mm

oss

FEED DIR ECTION

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

DSS

.

avalanche performance.  This value determined from sample failure population. 100% tested to this value in production.  When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to

application note #AN-994

 R

is measured at TJ approximately 90°C

θ

Data and specifications subject to change without notice.

This product has been designed for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/2010

www.irf.com 11