Datasheet irlr2908 Datasheet

PD - 94501

g

AUTOMOTIVE MOSFET

IRLR2908 IRLU2908

Features

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.\

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C

@ TC = 100°C

I

D

@ TC = 25°C

I

D

I

DM

PD @TC = 25°C

V

GS

E

AS

E

(tested)

AS

I

AR

E

AR

dv/dt T

J

T

STG

Conti n uous Drai n Cur r e nt, V Conti n uous Drai n Cur r e nt, V Conti n uous Drai n Cur r e nt, V Pulsed Drain Current

Maximum Power Dissipation W Linear D er ating Factor W/°C

Gate-to-Source Volt age V Single Puls e Avalanche En er gy (Therm ally Limited )

le Pulse Avalanche Energy Tested Va lu e

Sin Avalanche Current Repetitive A v alanch e Energy

Peak Di od e R ec overy dv /dt Operating Junction and °C Stor ag e Temperat ur e Ra ng e

Soldering Temperature, for 10 seconds

c

@ 10V (Si licon Limited)

GS

@ 10V (See Fi g. 9)

GS

(Package Limited)

@ 10V

GS

i

h

e

d

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

R

θJA

Junction-to-Case ––– 1.3 °C/W Junction-to-Ambient (PCB Mount)

Junction-to-Ambient ––– 110

j

www.irf.com 1

HEXFET® Power MOSFET

D

V

= 80V

DSS

R

DS(on)

= 28mΩ

ID = 30A

S

D-Pak

IRLR2908

Max.

39 28

30 150 120

0.77

± 16

180 250

See Fig.12a,12b,15,16

2.3

-55 to + 175

300 (1. 6m m fr o m case )

––– 40

I-Pak

IRLU2908

A

mJ

A

mJ

V/ns

02/13/03

IRLR2908/IRLU2908

/

Static @ TJ = 25°C (unless o therwi se specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆ΒV

DSS

R

DS(on)

V

GS(th)

gfs Forwa r d Tra nscond uc tance 35 – –– ––– S I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff.

oss

Drain-t o-Source Breakdown Voltage 80 ––– ––– V

∆T

Breakdown Vol t age Temp. Co ef f icient ––– 0.085 ––– V/°C

J

Static Drai n-to-Sou rce On-Re s istance ––– 22.5 28

––– 25 30

Gate Threshold Volt age 1.0 ––– 2.5 V

Drain-t o-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leaka ge ––– ––– -200 Total Gate Charge ––– 22 33 nC Gate-to-Source Charge ––– 6.0 9.1 Gate -t o - D rain ("Miller") Char g e ––– 11 17 Turn- On D elay Time ––– 12 ––– ns Rise Time –––95––– Turn-Off Del a y Time ––– 36 ––– Fall Time –––55––– Internal D rain Inductance ––– 4.5 ––– nH Betwee n lead,

Internal Sour ce Inductance ––– 7.5 ––– from packag e

Input Capacitance ––– 1890 ––– pF Output Cap acitance ––– 260 ––– Reverse Transfer Capacitance ––– 35 ––– Output Capacitance ––– 1920 ––– Output Cap acitance ––– 170 ––– Effective Output Capacitance ––– 310 –––

Conditions

VGS = 0V, ID = 250µA Referen ce to 25°C, I V

mΩ

= 10V, ID = 23A

GS

V

= 4.5V, ID = 20A

GS

= VGS, ID = 250µA

V

DS

= 25V, ID = 23A

V

DS

V

= 80V, VGS = 0V

DS

= 80V, VGS = 0V, TJ = 125°C

V

DS

V

= 16V

GS

= -16V

V

GS

= 23A

I

D

VDS = 64V V

= 4.5V

GS

V

= 40V

DD

I

= 23A

D

R

= 8.3Ω

G

f

= 4.5V

V

GS

6mm (0.25in.)

and center of die contact V

= 0V

GS

V

= 25V

DS

ƒ = 1.0MHz , See Fig . 5 V

= 0V, VDS = 1.0V, ƒ = 1.0MHz

GS

V

= 0V, VDS = 64V, ƒ = 1. 0M Hz

GS

VGS = 0V, VDS = 0V to 64V

= 1mA

D

f

D

G

S

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes  through  are on page 11

Conti n uous Source Curren t ––– ––– 39 (Body Diode) A

Pulsed Source Current ––– ––– 150 (Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V Reverse Reco very Time ––– 75 110 ns Reverse Recovery Char ge ––– 210 310 nC Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

HEXFET® is a registered trademark of International Rectifier.

MOSFET symbol showing the

integral reve r s e p-n junct ion diode.

TJ = 25°C, IS = 23A, VGS = 0V T

= 25°C, IF = 23A, VDD = 25V

J

di/dt = 100A/µs

Conditions

D

G

S

f

2 www.irf.com

IRLR2908/IRLU2908

1000

TOP 15V

)

100

A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

10

1

0.1

BOTTOM 2.5V

VGS 10V

4.5V

4.0V

3.5V

3.0V

2.7V

2.5V

20µs PULSE WIDTH Tj = 25°C

0.01

0.01 0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000

)

Α

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

10

TJ = 175°C

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

1

2 3 4 5

VGS, Gate-t o-Source Voltage (V)

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

1000

TOP 15V

100

BOTTOM 2.5V

10

1

D

VGS 10V

4.5V

4.0V

3.5V

3.0V

2.7V

2.5V

20µs PULSE WIDTH Tj = 175°C

0.1

0.01 0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

60

) S

(

50

e

c

n

a

t

c

40

u

d

n

o

c

s

30

n

a

r T

d

r

a

20

w

r

o F

,

S

10

F

G

0

0 10 20 30 40 50 60

TJ = 25°C

TJ = 175°C

VDS = 10V 20µs PULSE WIDTH

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRLR2908/IRLU2908

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

iss rss oss

= C

gs

gd

ds

C C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.00

) A

(

100.00

t

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

10.00

1.00

0.10

TJ = 175°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V)

+ Cgd, C

+ C

gd

C

iss

C

oss

C

rss

SHORTED

ds

V

GS

= 0V

) V

( e

g

a

t

l

o V

e

c

r

u

o S

-

o

t

-

e

t

a G

, V

5.0 ID= 23A

4.0

3.0

2.0

S

1.0

G

0.0

0 5 10 15 20 25

VDS= 64V VDS= 40V VDS= 16V

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r D

1

,

Tc = 25°C

D

I

Tj = 175°C Single Pulse

0.1

1 10 100 1000

LIMITED BY RDS(on)

100µsec

10msec

VDS, Drain-to-Source Voltage (V)

1msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRLR2908/IRLU2908

40

35

30

) A

(

t

25

n

e

r

u C

20

n

i

a

r

15

D

,

D

I

10

5

0

25 50 75 100 125 150 175

TC , Case Temper ature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

10

3.0

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 38A V

= 4.5V

GS

2.5

2.0

)

d

e

z

i

1.5

l

a m

r

o N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

)

C

1

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

D = 0.50

0.20

0.10

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

P

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

t

1

t

2

t1 , Rectangular Pulse Dur ation (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRLR2908/IRLU2908

A

15V

DRIVER

+

V

DD

-

R

G

20V

V

DS

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

400

)

J m

( y

g

r

e

300

n E

e

h

c

n

a

l

a

200

v A

e

s

l

u P

e

l

g

100

n

i S

,

S A

E

0

25 50 75 100 125 150 175

TOP 9.3A

BOTTOM23A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

2.5

I

D

16A

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

( e

g

2.0

a

t

l

o V

d

l

o

h

s

1.5

e

r

h

t e

t

a G

)

h

1.0

t

( S G

V

0.5

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

1000

IRLR2908/IRLU2908

Duty Cycle = Singl e Pulse

100

) A

(

t

n

e

r

u C

10

e

h

c

n

a

l

a

v A

1

0.1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

200

TOP Single Pulse BOTTOM 10% Duty Cycle

)

J m

150

( y

g

r

e

n E

e

100

h

c

n

a

l

a

v A

,

50

R A

E

0

25 50 75 100 125 150 175

ID = 23A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRLR2908/IRLU2908

Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

D.U.T

+



-

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

+



V

DD

R

G

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

-

Re-Applied Voltage

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-252AA (D-Pak) Package Outline

Dimensions are shown in millimeters (inches)

6.73 (.265)

6.35 (.250)

5.46 (.215)

5.21 (.205)

1.02 (.040)

1.64 (.025)

1.52 (.060)

1.15 (.045)

1.14 (.045)

2X

0.76 (.030)

2.28 (.090)

- A -

4

1 2 3

3X

4.57 (. 180)

1.27 (. 050)

0.88 (. 035)

6.22 (.245)

5.97 (.235)

- B -

0.89 (.035)

0.64 (.025)

0.25 (.010) M A M B

IRLR2908/IRLU2908

2.38 (.094)

2.19 (.086)

10.4 2 ( . 4 10 )

9.40 (.370)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSIO N : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

0.51 (.020) MIN.

0.58 (. 023)

0.46 (. 018)

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

TO-252AA (D-Pak) Part Marking Information

Notes: This part marking information applies to devices produced before 02/26/2001

EXAMPLE:

Notes: T his part marking information applies to devices produced after 02/26/2001

EXAMPLE:

www.irf.com 9

THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P

THIS IS AN IRFR120 WITH ASSEMBLY

LOT CODE 1234 AS SE MBLE D ON WW 16, 1999 IN THE ASSEMBL Y LINE "A"

INTERNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

INTERNAT IONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

IRFU120

9U 1P

IRF U120

916A

DATE CODE

016

3412

YE AR = 0 WE E K = 16

PART NUMBE R

DATE CODE YEAR 9 = 1999 WEEK 16 LINE A

IRLR2908/IRLU2908

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

6.73 (.265)

6.35 (.250)

5.46 (.215)

5.21 (.205)

1.52 (.060)

1.15 (.045)

- A -

4

1 2 3

1.27 (.050)

0.88 (.035)

6.22 (.245)

5.97 (.235)

2.38 (.094)

2.19 (.086)

0.58 (.023)

0.46 (.018)

6.45 (.245)

5.68 (.224)

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

- B -

2.28 (.090)

1.91 (.075)

1.14 (.045)

3X

0.76 (.030)

2.28 (.090)

9.65 (.380)

8.89 (.350)

0.89 (.035)

3X

0.64 (.025)

0.25 (.010) M A M B

2X

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M , 1 982 . 2 CONTROLLI NG DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006).

1.14 (.045)

0.89 (.035)

0.58 (.023)

0.46 (.018)

I-Pak (TO-251AA) Part Marking Information

Notes : T his part marking information applies to devices produced before 02/26/2001

EXAMPLE:

Notes: T his part marking information applies to devices produced after 02/26/2001

THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P

INTERNAT IONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

IRF U120

016

9U 1P

DATE CODE YEAR = 0 WEEK = 16

EXAMPLE:

THIS IS AN IRFR120 WIT H AS SE MB L Y LOT CODE 5678 AS SEMBLE D ON WW 19, 1999 IN T HE ASSEMBLY LINE "A"

INTERNAT IONAL

RECT IFIER

LOGO

AS S E MB L Y LOT CODE

IRF U120

56

919A

78

PART NUMBE R

DATE CODE YE AR 9 = 1999 WE E K 1 9 LINE A

10 www.irf.com

IRLR2908/IRLU2908

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TR

TRR

TRL

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

FEED DIRECTION

8.1 ( .318 )

7.9 ( .312 )

16 mm

16.3 ( .641 )

15.7 ( .619 )

FEED DIRECTION

Notes:

 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).  Limited by T

this value.

 I

≤ 23A, di/dt ≤ 400A/µs, V

SD

, starting TJ = 25°C, L = 0.71mH, RG = 25Ω, I

Jmax

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

= 23A, VGS =10V. Part not recommended for use above

AS

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time as C

oss

 Limited by T

, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.

Jmax

oss

while V

is rising from 0 to 80% V

DS

DSS

.

 This value determined from sample failure population. 100% tested to this value in production.  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer

to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 02/03

www.irf.com 11