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PD- 9.1335B
PRELIMINARY
IRLR/U2703
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2703)
l Straight Lead (IRLU2703)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 16 A
I
DM
PD @TC = 25°C Power Dissipation 45 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 96
Linear Derating Factor 0.30 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 77 mJ
Avalanche Current 14 A
Repetitive Avalanche Energy 4.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
V
= 30V
DSS
R
DS(on)
= 0.045Ω
ID = 23A
S
D - P ak
TO-252AA
I-P a k
TO-251AA
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 3.3
Case-to-Ambient (PCB mount)** ––– 50 °C/W
Junction-to-Ambient ––– 110
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IRLR/U2703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0. 030 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.045 VGS = 10V, ID = 14A
––– ––– 0.065 VGS = 4.5V, ID = 12A
W
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 6.4 ––– ––– S VDS = 25V, ID = 14A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 30V, VGS = 0V
µA
VGS = 16V
nA
Total Gate Charge ––– –– – 15 ID = 14A
Gate-to-Source Charge ––– ––– 4.6 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 9.3 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.5 ––– VDD = 15V
Rise Time ––– 140 –––
Turn-Off Delay Time ––– 1 2 ––– RG = 12Ω, VGS = 4.5V
ns
ID = 14A
Fall Time ––– 20 ––– RD = 1.0Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 450 ––– VGS = 0V
Output Capacitance ––– 210 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 110 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
23
96
showing the
A
p-n junction diode.
G
Diode Forward Voltage –– – ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
Reverse Recovery Time ––– 65 9 7 n s TJ = 25°C, IF = 14A
Reverse RecoveryCharge ––– 140 210 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 15V, starting TJ = 25°C, L =570µH
DD
RG = 25Ω, I
I
≤ 14A, di/dt ≤ 140A/µs, V
SD
= 14A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
,
Caculated continuous current based on maximum allowable
junction temperature; Package limitation current = 20A.
This is applied for I-PAK, L
of D-PAK is measured between
S
lead and center of die contact.
Uses IRL2703 data and test conditions.
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
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IRLR/U2703
A
A
)
A
A
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTTOM 2.5V
10
1
D
I , D ra in-to -S o u rc e C u rre nt ( A )
2.5V
0.1
0.1 1 10 1 00
V , D rain-to-Source V oltage (V)
DS
100
T = 25°C
J
20µs PU LS E WIDTH
T = 25°C
J
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
100
BOTTOM 2.5V
10
1
D
I , D ra in-to -S o u rc e C u rre nt ( A )
2.5V
20µs PU LS E WIDTH
T = 175°C
0.1
0.1 1 10 1 00
V , D rain-to-Source V oltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I = 2 4A
23A
D
T = 175°C
J
10
1
D
I , Drain-to-Source Current (A)
0.1
2345678910
V , Ga te-to -So u rc e V o ltage (V
GS
V = 15V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(N o rma lize d )
0.5
DS(on)
R , D ra in -to -S o u rc e On R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Tem pe rature (°C)
J
Fig 4. Normalized On-Resistance
V = 10 V
GS
Vs. Temperature
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IRLR/U2703
A
g
g
g
A
)
A
A
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C S H O RTE D
iss
C = C
C = C + C
C
iss
C
oss
C
rss
V , D rain-to-Source V oltage (V)
DS
s gd ds
rss
d
oss d s
d
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I = 1 4 A
V , G a te -to -S o ur ce Vo ltag e (V )
12
GS
D
9
6
3
V = 24 V
DS
V = 15 V
DS
FOR TEST CIRCUIT
0
048121620
Q , T o ta l Ga te C h a rge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O P E R A T IO N IN T H IS A R E A LIMITE D
BY R
DS(on)
T = 175°C
J
T = 25°C
10
SD
I , Re ve rs e D ra in Cur ren t (A )
1
0.4 0.8 1.2 1.6 2.0 2.4
V , Source-to-Drain Voltage (V
J
V = 0V
SD
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
I , Drain Current (A)
T = 2 5 ° C
C
T = 175°C
J
Single Pulse
1
1 10 100
V , Dra in-t o -S o u rc e V o ltage (V)
DS
Fig 8. Maximum Safe Operating
Area
10µs
100µs
1ms
10ms
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Page 5
)
25
LIMITED BY PACKAGE
20
15
10
D
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRLR/U2703
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
10
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULS E
(THERMAL RESPONSE )
No te s :
1. Du ty factor D = t / t
2. P e a k T = P x Z + T
t , R ec ta ngular Pulse Duration (sec
1
J
DM
P
DM
2
1
thJC
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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t
1
t
2
C
A
Page 6
IRLR/U2703
A
A
15V
DRIVER
+
-
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
160
120
80
V
DD
40
AS
V = 15 V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TO P 5.7A
9.9A
B O TT OM 14 A
D
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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Page 7
IRLR/U2703
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRLR/U2703
A
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
- A -
5.46 (.215)
5.21 (.205)
4
6.22 (.245)
1.02 (.040)
1.64 (.025)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
1 2 3
5.97 (.235)
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
Part Marking Information
TO-252AA (D-PARK)
- B -
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMEN SIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEF ORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
0.51 (.020)
MIN .
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G A TE
2 - D RA IN
3 - S OURC E
4 - D RA IN
E X A MP L E : T HIS IS AN IRF R1 2 0
WITH ASSEMBLY
L OT C OD E 9U 1 P
INTERN ATIONA L
RECTIFIER
L OG O
IRFR
120
FIRST PO RTION
OF PART NUMBER
9 U 1 P
ASSEMBLY
L OT C OD E
SECOND PORTION
OF PART NUMBER
8 www.irf.com
Page 9
Package Outline
R
TO-251AA Outline
Dimensions are shown in millimeters (inches)
IRLR/U2703
6.73 (.265)
6.35 (.250)
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
- B -
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
- A -
4
1 2 3
3X
2X
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
9.65 (.380)
8.89 (.350)
0.89 (.035)
0.64 (.025)
0.25 (.0 1 0) M A M B
Part Marking Information
TO-251AA (I-PARK)
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 D IMENSION ING & T O LE R A NCING PE R A NSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SO LDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GA T E
2 - DR A IN
3 - SO URCE
4 - DR A IN
E X A MP L E : T HIS IS AN I R F U1 2 0
WITH ASSEMBLY
L OT CO DE 9 U 1 P
INTE RNATIONAL
R E CT IF IER
L OG O
IR F U
120
F IR S T P O RT IO N
OF PART NUMBE
9U 1P
ASSEMBLY
L O T C OD E
SECOND PORTION
OF PART NUMBER
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IRLR/U2703
Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
16 . 3 ( .641 )
15 . 7 ( .619 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OU TLINE CONFORM S TO EIA-481 & EIA-541.
13 INCH
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
TRR
TRL
16 .3 ( .6 4 1 )
15 .7 ( .6 1 9 )
FEED DIRECTION
16 m m
NOTES :
1. OUTLINE CONFO RM S TO EIA-481.
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
http://www.irf.com/ Data and specifications subject to change without notice. 4/98
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