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PD- 94350
IRLR/U014N
HEXFET® Power MOSFET
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
G
D
V
= 55V
DSS
R
S
DS(on)
ID = 10A
= 0.14Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
D-Pak
TO-252AA
I-Pak
TO-251AA
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.1 A
I
DM
PD @TC = 25°C Power Dissipation 28 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 40
Linear Derating Factor 0.2 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 35 mJ
Avalanche Current 6.0 A
Repetitive Avalanche Energy 2.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
R
θJA
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 5.3
Case-to-Ambient (PCB mount)** ––– 50 °C/W
Junction-to-Ambient ––– 110
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IRLR/U014N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.14 V
––– ––– 0.21 VGS = 4.5V, ID = 5A
Ω
= 10V, ID = 6A
GS
Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA
Forward Transconductance 3.1 ––– ––– SVDS = 25V, ID = 6A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
––– ––– 25
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 150°C
µA
nA
= 55V, VGS = 0V
V
DS
VGS = 16V
Total Gate Charge ––– ––– 7.9 ID = 6A
Gate-to-Source Charge ––– ––– 1.4 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 4.4 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 6.5 ––– VDD = 28V
Rise Time ––– 47 –––
Turn-Off Delay Time ––– 12 ––– RG = 6.2Ω, VGS = 5.0V
ns
ID = 6A
Fall Time ––– 23 ––– RD = 4.5Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 265 ––– VGS = 0V
Output Capacitance ––– 80 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 38 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
10
40
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6A, VGS = 0V
Reverse Recovery Time ––– 37 56 nS TJ = 25°C, IF = 6A
Reverse RecoveryCharge ––– 48 71 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
V
(BR)DSS
= 25°C, L = 1.96mH
J
= 6A. (See Figure 12)
AS
≤ 6.0A, di/dt ≤ 210A/µs, V
,
DD
This is applied for I-PAK, L
of D-PAK is measured between
S
lead and center of die contact
≤
TJ ≤ 175°C
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D
S
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IRLR/U014N
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
10
VGS
VGS
TOP 15V
TOP
15V
10V
12V
5.0V
10V
4.5V
7.0V
3.5V
5.0V
3.0V
4.5V
2.7V
2.7V
BOTTOM
2.0V
BOTTOM 2.5V
2.5V
20µs PULSE WIDTH
T=25C
J
V , Drain-to-SourceVoltage (V)
DS
T=25C
J
°
°
T = 175 C
J
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
VGS
TOP 15V
TOP
15V
12V
10V
10V
5.0V
7.0V
4.5V
5.0V
3.5V
4.5V
3.0V
2.7V
2.7V
BOTTOM
2.0V
BOTTOM 2.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-SourceVoltage (V)
DS
2.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
2.0
°
1.5
I =
D
10A
1.0
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
2.0 4.0 6.0 8.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRLR/U014N
500
400
C
300
C
200
C, Capacitance (pF)
C
100
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
iss
oss
rss
oss ds gd
V , Drain-to-Source Voltage (V)
DS
f=1MHz
C
+C+CC SHORTED
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I =
6A
D
V = 44V
DS
V = 27V
DS
10
5
GS
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 2 4 6 8 10
Q ,TotalGateCharge(nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
°
T = 175 C
J
°
T=25C
J
V ,Source-to-Drain Voltage (V)
SD
V=0V
GS
Fig 7. Typical Source-Drain Diode
10
D
I , Drain Current (A)I , Drain Current (A)
1
°
=25 C
C
TT= 175 C
Single Pulse
0.1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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10.0
8.0
6.0
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150 175
T , Case Temperature (C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRLR/U014N
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Fig 10b. Switching Time Waveforms
+
V
DD
-
10
thJC
D = 0.50
0.20
1
0.10
0.05
SINGLE PULSE
Thermal Response (Z )
0.02
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1
(THERMAL RESPONSE)
Notes:
1. Dutyfactor D= t/t
2. Peak T =P xZ +T
t , Rectangular PulseDuration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U014N
15V
DRIVER
+
-
R
10V
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
60
TOP
50
40
30
V
DD
A
20
10
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , JunctionTemperature (C)
J
BOTTOM
I
D
2.4A
5.0A
6.0A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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IRLR/U014N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRLR/U014N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
-A-
5.46 (.215)
5.21 (.205)
4
6.22 (.245)
1.02 (.040)
1.64 (.025)
1.52(.060)
1.15(.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
123
5.97 (.235)
0.89 (.035)
3X
0.64 (.025)
0.25 (.010) M A M B
4.57 (.180)
Part Marking Information
TO-252AA (D-PAK)
-B-
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSIY14.5M, 1982.
2 CONTROLLING DIMENSION: INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONSSHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45(.245)
5.68(.224)
0.51 (.020)
MIN.
0.58(.023)
0.46(.018)
LEADASSIGNMENTS
1-GATE
2 - DRAIN
3-SOURCE
4 - DRAIN
E
X
A
M
P
I
H
S
T
E
:
L
A
S
I
N
W
T
I
H
A
S
S
T
O
C
L
D
O
A
S
B
S
E
M
L
N
A
I
S
T
E
H
2
0
1
R
F
R
I
E
Y
M
L
B
3
4
1
2
E
E
D
N
O
W
6
W
1
9
9
,
1
9
"
E
N
B
S
E
M
L
A
I
L
Y
"
T
N
E
N
R
I
A
A
L
N
O
T
I
R
E
I
C
E
R
F
T
I
L
G
O
O
A
S
O
L
Y
L
B
S
E
M
T
C
E
D
O
U
1
R
I
F
0
2
9
1
A
6
3
1
4
2
P
A
T
R
M
U
N
E
B
R
D
A
C
T
E
D
O
E
E
A
Y
9
R
=
1
9
9
9
W
E
E
6
K
1
A
E
N
I
L
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Page 9
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
IRLR/U014N
6.73 (.265)
6.35 (.250)
5.46 (.215)
5.21 (.205)
1.52 (.060)
1.15 (.045)
-B-
2.28 (.090)
1.91 (.075)
1.14 (.045)
3X
0.76 (.030)
2.28 (.090)
-A-
4
123
3X
2X
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
9.65 (.380)
8.89 (.350)
0.89 (.035)
0.64 (.025)
0.25 (.010) M A M B
Part Marking Information
TO-251AA (I-PAK)
2.38 (.094)
2.19 (.086)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
NOTES:
1 DIMENSIONING& TOLERANCINGPER ANSI Y14.5M,1982.
2 CONTROLLING DIMENSION :INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX.+0.16 (.006).
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1-GATE
2-DRAIN
3 - SOURCE
4-DRAIN
P
A
T
R
U
N
E
B
R
E
X
A
M
P
E
:
L
I
H
A
S
T
S
I
N
W
T
H
I
A
S
S
T
O
L
O
C
D
A
S
S
E
M
B
L
A
E
H
S
T
N
I
2
0
1
R
F
R
I
E
Y
M
L
B
E
5
6
7
8
E
D
N
O
W
W
S
E
I
N
L
Y
L
B
M
9
,
1
9
9
1
9
"
E
A
"
T
N
E
N
R
I
A
A
L
N
O
T
I
R
E
I
C
E
R
F
T
I
L
G
O
O
A
S
O
L
Y
L
B
S
E
M
T
C
E
D
O
U
1
I
F
0
2
R
1
9
A
9
8
7
6
5
D
Y
W
I
L
M
C
A
T
E
D
O
E
E
A
R
9
=
1
9
9
9
E
E
9
K
1
N
A
E
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IRLR/U014N
Tape & Reel Information
TO-252AA
Dimensions are shown in millimeters (inches)
TR
16.3( .641 )
15.7( .619 )
12.1 ( .476 )
11.9 ( .469 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
FEED DIRECTION
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive[Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information 5/99
10 www.irf.com
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