Page 1
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD- 93759A
IRLMS4502
HEXFET® Power MOSFET
1
D
2
D
A
6
D
V
= -12V
5
D
DSS
3
G
4
S
R
DS(on)
= 0.042Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
Micro6
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -5.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -4.4 A
I
DM
PD @TA = 25°C Power Dissipation 1.7
PD @TA = 70°C Power Dissipation 1.1
E
AS
V
GS
T
J, TSTG
Drain- Source Voltage -12 V
Pulsed Drain Current -44
Linear Derating Factor 0.013 W/°C
Single Pulse Avalanche Energy 28 mJ
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
W
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 75 °C/W
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IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -12 ––– ––– VVGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.003 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.042 V
––– ––– 0.075 V
Ω
= -4.5V, ID = -5.5A
GS
= -2.5V, ID = -4.7A
GS
Gate Threshold Voltage -0.60 ––– ––– VVDS = VGS, ID = -250µA
Forward Transconductance 8.8 ––– ––– SVDS = -10V, ID = -5.5A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 VDS = -12V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 125°C
µA
nA
= -12V
GS
Total Gate Charge ––– 22 33 ID = -5.5A
Gate-to-Source Charge ––– 3.9 5.8 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 11 16 VGS = -5.0V
Turn-On Delay Time ––– 18 ––– VDD = -6.0V
Rise Time ––– 460 ––– ID = -1.0A
Turn-Off Delay Time ––– 130 ––– RG = 4.5Ω
ns
Fall Time ––– 250 ––– RD = 6.0Ω
Input Capacitance ––– 1820 ––– VGS = 0V
Output Capacitance ––– 1110 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 1070 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-1.7
-44
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.7A, VGS = 0V
Reverse Recovery Time ––– 31 46 ns TJ = 25°C, IF = -5.5A
Reverse Recovery Charge ––– 21 32 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting T
RG = 25Ω, I
= 25°C, L = 1.8mH
J
= -5.5A. (See Figure 12)
AS
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D
S
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IRLMS4502
1000
100
10
D
-I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM
-2.25V
-2.25V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
100
10
D
-I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM
-2.25V
-2.25V
20µs PULSE WIDTH
-V , Drain-to-Source Voltage (V)
DS
°
T = 150 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-5.5A
I =
D
1.5
100
°
T = 25 C
J
°
T = 150 C
J
D
-I , Drain-to-Source Current (A)
V = -15V
DS
10
2.0 3.0 4.0 5.0 6.0 7.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-4.5V
GS
°
Vs. Temperature
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IRLMS4502
)
2600
2200
1800
C, Capacitance(pF)
1400
1000
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
= C
= C
+ Cgd, C
gs
gd
+ C
ds
gd
iss
C
rss
C
oss
Ciss
Coss
Crss
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 150 C
10
J
SHORTED
ds
15
I =
-5.5A
D
GS
12
9
6
3
V =-10V
DS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on
10us
100us
1ms
10ms
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRLMS4502
6.0
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
80
TOP
60
40
20
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
-2.5A
-4.4A
-5.5A
°
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLMS4502
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Package Outline
Micro6
3.00 (.118
2.80 (.111
1.75 (.068
1.50 (.060
-A -
6 5 4
1 2 3
-B-
.118
3.00
2.60 (.103
LEAD ASSIGNM ENT S REC O MMENDED FOO T PRINT
DD
S
2X 0.95 (.0375
6 5 4
1 2 3
2.20 (.087
6X (1.06 (.042
.037 5
0.95
2X
1.30
.051
0.90 (.036
-C-
NOTES :
1. DIM E NS IO N ING & T O LE R AN C IN G PER ANS I Y1 4.5M - 1982.
2. C ON T R O L LIN G DIM E NSIO N : M IL LI M E T ER .
3. DIMENSIONS ARE S HO W N IN M ILLIMETERS
0.15 (.006
MA X .
0.50 (.019
6X
0.35 (.014
.006 ) M C A S B S
0.15
1.45
0.90 (.036
.057
Part Marking Information
Micro6
THIS IS AN IRLMS6702
PA RT NUMBER
WAF E R L OT
NUMBER COD E
0.10
.004
6 SURFAC ES
INCHES).
YW
2C
TOP
XXXX
D
WW = (1-26) IF PRE CEDED BY LAST DIGIT OF CALENDA R YEA R
DATE
CODE
2005
1996
1997
1998
1999
2000
G
D
O O
0 -10
0.60 (.023
0.10 (.004
WORK
WYEAR Y
WEEK
01
A2001 1
02
B2002 2
03
C2003 3
04
24
25 Y
26 Z
D2004 4
X
5
6
7
8
9
0
6X 0.6 5 (.025
0.20 (.007
6X
0.09 (.004
BOT T OM
PART NUMBER CODE REFERENCE:
2A = IRL MS1902
2B = IRLMS1503
2C = IR LMS6702
2D = IRL MS5703
2E = IRLMS6802
2F = IRL MS4502
2G = IRLMS2002
2H = IRLMS 6803
DATE CODE EXAMPLE S:
YWW = 9603 = 6C
YWW = 9632 = FF
WW = (27-52) IF PRE CEDE D BY A LETT ER
2005
1996
1997
1998
1999
2000
WORK
WEEK
27
28
29
30
50
51 Y
52
WYEAR
A2001 A
B2002 B
C2003 C
D2004 D
X
Z
Y
E
F
G
H
J
K
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Tape & Reel Information
)
)
(
)
Micro6
IRLMS4502
8mm
4mm
NOTES :
1. OUTLINE CON FORM S TO EIA-481 & EIA-541.
178.00
7.008
MAX.
NOTES:
1. CONT ROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
This product has been designed and qualified for the consumer market.
FEED DIRECTION
9.90 ( .390
8.40 ( .331
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/01
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