Datasheet irlms2002 Datasheet

l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel l 2.5V Rated

PD- 93758C

IRLMS2002

HEXFET® Power MOSFET

1

D

2

D

3

G

A

6

D

V

= 20V

R

DS(on)

DSS

= 0.030Ω

5

D

4

S

Description

Top View

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The Micro6 package with its customized leadframe produces a HEXFET



power MOSFET with R

DS(on)

60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R enables a current-handling increase of nearly 300% compared to the SOT-23.

DS(on)

reduction

Micro6

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.5 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 5.2 A I

DM

PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3

V

GS

T

J, TSTG

Drain- Source Voltage 20 V

Pulsed Drain Current  20

Linear Derating Factor 0.016 W/°C Gate-to-Source Voltage ± 12 V Junction and Storage Temperature Range -55 to + 150 °C

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 62.5 °C/W

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02/16/01

IRLMS2002

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.030 V ––– ––– 0.045 V

Ω

= 4.5V, ID = 6.5A 

GS

= 2.5V, ID = 5.2A 

GS

Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA Forward Transconductance 13 ––– ––– SVDS = 10V, ID = 6.5A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C

µA

nA

= -12V

GS

Total Gate Charge ––– 15 22 ID = 6.5A Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V Gate-to-Drain ("Miller") Charge ––– 3.5 5.3 VGS = 5.0V  Turn-On Delay Time ––– 8.5 ––– VDD = 10V Rise Time ––– 11 ––– ID = 1.0A Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω

ns

Fall Time ––– 16 ––– RD = 10Ω  Input Capacitance ––– 1310 ––– VGS = 0V Output Capacitance ––– 150 ––– pF VDS = 15V Reverse Transfer Capacitance ––– 36 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

–––

2.0

20

A

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V  Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.7A Reverse Recovery Charge ––– 13 20 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on FR-4 board, t ≤ 5sec.

max. junction temperature. ( See fig. 11 )

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRLMS2002

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

100

VGS

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V



2.00V

BOTTOM

1.50V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.50V



2.00V

BOTTOM

1.50V

20µs PULSE WIDTH



V , Drain-to-Source Voltage (V)

DS

°

T = 150 C

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

5.3A

I =



D

°

T = 25 C



J

°

T = 150 C



J

10

D

I , Drain-to-Source Current (A)

V = 15V

DS



1

1.5 2.0 2.5 3.0 3.5

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

4.5V



GS

°

Vs. Temperature

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IRLMS2002

)

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V, C

C C

iss



oss



rss

f = 1MHz

+ C + C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

C



C C

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

GS

V , Gate-to-Source Voltage (V)

6.5A

I =

5.3A

D



V = 10V

DS

8

6

4

2

0

0 4 8 12 16 20 24

Q , Total Gate Charge (nC)

G



Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on

10

°

T = 150 C



J

10



1ms

1

°

T = 25 C



J

SD

I , Reverse Drain Current (A)

V = 0 V



0.1

0.4 0.6 0.8 1.0 1.2

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

D

I , Drain Current (A)I , Drain Current (A)



°

= 25 C

A

T T= 150 C



Single Pulse

1

0.1 1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLMS2002

6.0

5.0

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

100

0.20

0.10

0.00

Id = 250µA

-0.10

, Variace ( V )

-0.20

GS(th)

V

-0.30

-0.40

-50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Typical Vgs(th) Variance Vs.

Juction Temperature

D = 0.50

thJA

Thermal Response (Z )

0.20

10

0.10

0.05

P

0.02

1

0.01

SINGLE PULSE



(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLMS2002

0.040

)

Ω

)

0.10

Ω

0.035

0.030

, Drain-to -Source Voltage (

0.025

DS(on)

R

0.020

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V

GS,

Id = 5.3A

Gate -to -Source Voltage ( V )

Fig 12. Typical On-Resistance Vs.

Gate Voltage

0.08

0.06

0.04

( on) , Drain-to-Source On Resistance (

DS

0.02

R

0 10 20 30 40

VGS= 2.5V

ID, - Drain Current (A )

Fig 13. Typical On-Resistance Vs.

Drain Current

VGS = 4.5V

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Micro6 Package Outline

)

(

)

(

)

(

)

(

)

(

)

(

)

(

)

(

3.00

.118

-B-

3.00

.118

2.60 (.103

1.75 (.068

1.50 (.060

-A-

2.80 (.111

6 5 4

1 2 3

IRLMS2002

LEAD ASSIGNMENTS R EC OMMEND E D FOO T PR INT

DD

6 5 4

1 2 3

S

2X 0.95 (.0375

2.20 (.087

6X (1.06 (.042

.037 5

0.95 2X

.051

1.30

0.90 (.036

-C-

NOTES :

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.

2. C O NTR O LL IN G D IMENS IO N : MILL IM E T ER .

3. DIMENS IONS AR E S HO W N IN M ILLIMETERS

.006

0.15 M A X .

0.50 (.019

6X

0.35 (.014

.006 ) M C A S B S

0.15

1.45 (.057

0.90 (.036 .004

0.10

6 SURFACES

INC H E S).

Micro6 Part Marking Information

THIS IS AN IRLMS670 2

PART NUMBER

YW

2C

TOP

WAFER L OT

NUMBER CODE

XXXX

D

WW = (1 -26) IF PRECED ED BY L AST DIGIT OF CA L ENDAR YEAR

DATE CODE

G

D

O O

0 -10

0.60 (.023

0.10 (.004

WORK

WYEAR Y

WEEK

01

A2001 1

02

B2002 2

03

C2003 3

04

24 25 Y 26 Z

D2004 4

X

2005 1996 1997 1998 1999 2000

5 6 7 8 9 0

6X 0.65

0.20 (.007

6X

0.09 (.004

.025

BOTT OM

PART NUMBER CODE REFERENCE:

2A = IRLM S1902 2B = IRLMS1503 2C = IRLMS6702 2D = IRLMS 5703 2E = IRLMS6802 2F = IRLM S4502 2G = IRLMS2002 2H = IRLMS6803

DATE CODE EXAMPLES :

YWW = 9603 = 6C YWW = 9632 = FF

WW = (27-52) IF PRECEDED B Y A LE TTER

2005 1996 1997 1998 1999 2000

Y

E F G H J K

WORK WEEK

27 28 29 30

50 51 Y 52

WYEAR A2001 A

B2002 B C2003 C D2004 D

X Z

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IRLMS2002

)

(

)

Micro6

Tape & Reel Information

4m m

NOTES :

1. OU TL INE CO N FO R MS TO EIA -481 & E IA-541.

178.00

7.008

MAX .

8mm

FEED DIRECTION

9.90 ( .390

8.40 ( .331

NOTES:

1. C O N TR O L L ING D IM E NS IO N : M IL LIM E T ER .

2. OUTLINE CONFORM S TO EIA-481 & EIA-541.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/01

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