Page 1
l Generation V Technology
Top View
1
2
D
G
D
D
D
S
3
4
5
6
l Micro6 Package Style
l Ultra Low Rds(on)
l N-Channel MOSFET
PD - 9.1540B
IRLMS1902
HEXFET® Power MOSFET
V
= 20V
DSS
R
Description
DS(on)
= 0.10Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
DS(on)
Micro6
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 3.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 2.6 A
I
DM
PD @TA = 25°C Power Dissipation 1.7 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 18
Linear Derating Factor 13 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
R
Maximum Junction-to-Ambient –––
θJA
Parameter Min. Typ. Max Units
–––
75 °C/W
1/12/98
Page 2
IRLMS1902
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.10 VGS = 4.5V, ID = 2.2A
––– ––– 0.17 VGS = 2.7V, ID = 1.1A
Ω
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 3.2 ––– ––– S VDS = 10V, ID = 1.1A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 4.7 7. 0 ID = 2.2A
Gate-to-Source Charge ––– 0.97 1.5 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 1.8 2.6 VGS = 4.5V, See Fig. 6 and 9
Turn-On Delay Time ––– 7.0 ––– VDD = 10V
Rise Time ––– 11 ––– ID = 2.2A
Turn-Off Delay Time ––– 12 ––– RG = 6.0Ω
ns
Fall Time ––– 4.0 ––– RD = 4.4Ω, See Fig. 10
Input Capacitance ––– 300 ––– VGS = 0V
Output Capacitance ––– 120 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 50 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.2A, VGS = 0V
Reverse Recovery Time ––– 40 60 ns TJ = 25°C, IF = 2.2A
Reverse RecoveryCharge ––– 37 55 nC di/dt = 100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ 2.2A, di/dt ≤ 110A/µs, V
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤ 5sec.
–––
1.7–––
18
D
A
G
S
Page 3
IRLMS1902
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM
1.75V
1.75V
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25 C
J
°
Fig 1. Typical Output Characteristics
100
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM
1.75V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
1.75V
°
Fig 2. Typical Output Characteristics
2.0
I =
D
2.2A
°
T = 25 C
J
10
1
D
I , Drain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V , Gate-to-Source Voltage (V)
GS
T = 150 C
J
V = 10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
°
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
V =
GS
°
4.5V
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRLMS1902
600
500
400
300
200
C, Capacitance (pF)
100
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C
iss
C
oss
C
rss
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
2.2A
D
V = 16V
DS
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 2 4 6 8
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
9
10
°
T = 150 C
J
°
T = 25 C
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
4.5V
V
IRLMS1902
R
D.U.T.
D
+
V
DD
-
V
Q
G
Q
GS
Q
GD
R
DS
V
GS
G
G
4.5V
Pulse Width ≤ 1 µs
Charge
Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
DS
-
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
3mA
I
G
Current Sampling Resistors
I
D
Fig 9b. Gate Charge Test Circuit
100
D = 0.50
thJA
Thermal Response (Z )
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t , Rectangular Pulse Duration (sec)
1
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
P
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Page 6
IRLMS1902
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 12. For N-Channel HEXFETS
V
DD
I
SD
Page 7
Package Outline
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Micro6 Outline
IRLMS1902
3.00 (.118
2.80 (.111
1.75 (.068
1.50 (.060
-A -
0.95 ( .0375
2X
1.30 (.051
0.90 (.036
-C -
NOTES :
1. DIM ENSIONING & TO LER ANC ING PER A NS I Y14.5M-1982.
2. CO NTRO LLING D IMENSION : M ILLIMETER .
3. DIM ENSIONS ARE SHO WN IN MILLIMETERS (INC HES).
6 5 4
1 2 3
0.15 (.006
M A X.
-B -
3.00 (.118
2.60 (.103
0.50 (.019
6X
0.15 (.006 ) M C A S B S
0.35 (.014
1.45 (.057
0.90 (.036
0.10 (.004
6 SURFACES
Part Marking Information
Micro6
LEAD ASSIGN MENTS R EC O MMEN D E D FOOTPR INT
O O
0 -10
2X 0.95 (.0375
2.20 (.087
0.60 (.023
0.10 (.004
6X 0.65 (.025
0.20 (.007
6X
0.09 (.004
DD
6 5 4
1 2 3
DD
S
G
6X (1.06 (.042
EXAMPLE : THIS IS AN IRLMS6702
PART NU M BER
TOP
WAFER LOT
NUMBER CODE
BOTTO M
PART NUM BER EXAMPLES:
2A = IRLMS1902
2B = IRLMS1503
2C = IRLMS6702
2D = IRLMS5703
DATE
COD E
DATE CODE EXAM PLES:
YW W = 9603 = 6C
YW W = 9632 = FF
YEAR Y WEEK W
2001 1 01 A
2002 2 02 B
2003 3 03 C
2004 4 04 D
2005 5
1996 6
1997 7
1998 8
1999 9
2000 0 24 X
25 Y
26 Z
W O R K WEEK = (1-26) IF PRECEDED BY LAST DIGIT OF C ALENDER YEAR
W O R K WEEK = ( 27-52) IF PRECEDED BY A LETTER
WORK
YEAR Y W EEK W
2001 A 27 A
2002 B 28 B
2003 C 29 C
2004 D 30 D
2005 E
1996 F
1997 G
1998 H
1999 J
2000 K 50 X
51 Y
52 Z
WORK
Page 8
IRLMS1902
Tape & Reel Information
Micro6
8m m
4mm
NOTES :
1. OUTLINE CONFORM S TO EIA-481 & EIA-541.
178.00
( 7.008 )
M AX.
NOTES :
1. CONTROLLING DIMENSIO N : MILLIMETER.
2. OU TLINE CONF OR MS TO EIA-481 & EIA-541.
FEED DIRECTION
9.90 ( .390 )
8.40 ( .331 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 1/98
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