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PD - 93756D
IRLML6401
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l 1.8V Gate Rated
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
power MOSFETs are well known for, provides
HEXFET® Power MOSFET
1
G
V
= -12V
R
DS(on)
DSS
= 0.05Ω
3
D
2
S
Micro3
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
I
DM
PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8
E
AS
V
GS
T
J, TSTG
Drain- Source Voltage -12 V
Pulsed Drain Current -34
W
Linear Derating Factor 0.01 W/°C
Single Pulse Avalanche Energy 33 mJ
Gate-to-Source Voltage ± 8.0 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 75 100 °C/W
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IRLML6401
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -12 –– – ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
J
––– ––– 0.050 V
Static Drain-to-Source On-Resistance ––– 0.085 VGS = -2.5V, ID = -2.5A
Ω
= -4.5V, ID = -4.3A
GS
––– 0.125 VGS = -1.8V, ID = -2.0A
Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
––– ––– -1.0 V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C
µA
nA
= -12V, VGS = 0V
DS
Total Gate Charge ––– 10 15 ID = -4.3A
Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V
Turn-On Delay Time ––– 11 ––– VDD = -6.0V
Rise Time ––– 32 – –– ID = -1.0A
ns
Turn-Off Delay Time ––– 250 –– – RD = 6.0Ω
Fall Time ––– 210 –– – RG = 89Ω
Input Capacitance ––– 830 ––– VGS = 0V
Output Capacitance ––– 180 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-1.3
-34
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V
Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = -1.3A
Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting T
RG = 25Ω, I
= 25°C, L = 3.5mH
J
= -4.3A.
AS
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D
S
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IRLML6401
100
)
A
(
t
10
n
e
r
r
u
C
e
c
r
u
1
o
S
-
o
t
-
n
i
a
r
D
0.1
,
D
I
-
-1.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
-VDS, Drain-to- Source Voltage ( V)
Fig 1. Typical Output Characteristics
100.0
VGS
TOP -7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
100
)
A
(
t
10
n
e
r
r
u
C
e
c
r
u
1
o
S
-
o
t
-
n
i
a
r
D
0.1
,
D
I
-
-1.0V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I =
D
-4.3A
VGS
TOP -7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
)
Α
(
t
n
e
r
r
10.0
u
C
e
c
r
u
o
S
-
o
t
-
n
1.0
i
a
r
D
,
D
I
-
0.1
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig 3. Typical Transfer Characteristics
TJ = 25°C
TJ = 150°C
V
= -12V
DS
20µs PULSE WIDTH
-VGS, Gate-to-Source Voltage (V)
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRLML6401
1200
1000
)
F
800
p
(
e
c
n
a
t
i
600
c
a
p
a
C
,
400
C
200
0
Ciss
Coss
Crss
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
10
I =
-4.3A
D
V =-10V
DS
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 4 8 12 16
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
°
T = 150 C
J
°
T = 25 C
J
-V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
D
-I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
-V , Drain-to-Source V oltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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IRLML6401
5.0
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
80
TOP
60
40
20
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
-1.9A
-3.4A
-4.3A
°
100
thJA
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty fa cto r D = t / t
2. Peak T = P x Z + T
t , Rectangular Pu lse Dura t ion (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML6401
0.10
)
Ω
0.09
(
e
g
a
t
0.08
l
o
V
e
0.07
c
r
u
o
S
0.06
o
t
-
n
i
0.05
a
r
D
,
0.04
)
n
o
(
S
0.03
D
R
0.02
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-V
Gate -to - Source Voltage ( V )
GS,
Id = -4.3A
)
0.20
Ω
(
e
c
n
a
t
s
i
s
0.15
e
R
n
O
e
c
r
u
0.10
o
S
-
o
t
-
n
i
a
r
D
0.05
,
)
n
o
(
S
D
0.00
R
0 10203040
-ID , Drain Current ( A )
VGS = -2.5VVGS = -1.8V
VGS = -4.5V
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.8
)
V
(
e
0.7
g
a
t
l
o
V
d
l
0.6
o
h
s
e
r
h
t
e
0.5
t
a
G
)
h
t
(
S
0.4
G
V
-
0.3
-75 -50 -25 0 25 50 75 100 125 150
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
Fig 13. Typical On-Resistance Vs.
Drain Current
ID = -250µA
TJ , Temperature ( °C )
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Micro3 Package Outline
Dimensions are shown in millimeters (inches)
IRLML6401
- B -
D
3
LEAD ASSIGNMENTS
1 - GATE
2 - SOURCE
3 - DRAIN
3
E
- A -
- C B 3X
0.10 (.004) M C A S B S
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
3
3
1
2
e
e1
A
A1
H
0.20 ( .008 ) M A M
0.008 (.003)
θ
L
3X 3X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .032 .044 0.82 1.11
A1 .001 .004 0.02 0.10
B .015 .021 0.38 0.54
C .004 .006 0.10 0.15
D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BASI C 0.95 BASIC
E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
L .005 .010 0.13 0.25
θ
0° 8° 0° 8°
MINIMUM RECOMMENDED FOOTPRINT
C
0.90
( .035 )
3X
0.80 ( .031 )
3X
2.00
( .079 )
0.95 ( .037 )
2X
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Page 8
IRLML6401
Part Marking Information
Micro3
Notes : T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRLML6302
PART NUMBER
DATE
CODE
PART NUMBER CODE REF ERENCE:
1A = IRL ML2402
1B = IRL ML 2803
1C = IRLML6302
1D = IRLML5103
1E = IRL ML6402
1F = IRL ML6401
1G = IRLML2502
1H = IRLML5203
DATE CODE E XAMPLE S:
YWW = 9503 = 5C
YWW = 9532 = EF
Notes : This part marking information applies to devices produced after 02/26/2001
Y = YEAR
PART NUMBE R
PART NUMBER CODE REFERE NCE:
A = IRL ML2402
B = IRLML2803
C = IRL ML6302
D = IRL ML 5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRL ML 5203
W = WEEK
LOT
CODE
8 www.irf.com
WW = (1-26) IF PRE CE DED BY LAST DIGIT OF CALENDAR YEAR
WOR K
Y
1
2
3
4
5
61996
7
9
Y
A
B
C
D
E
F1996
G
J
5
6
7
8
9
0
Y
E
F
G
H
J
K
WE E K
01
02
03
04
24
25
26
WOR K
WE E K
27
28
29
30
502000
51
52
WORK
WEEK
01
02
03
04
24
25 Y
26 Z
WORK
WEEK
27
28
29
30
50
51 Y
52 Z
W
A
B
C
D
X
Y
Z
W
A
B
C
D
X
Y
Z
WYEAR Y
A2001 1
B2002 2
C2003 3
D1994 4
X
WYEAR
A2001 A
B2002 B
C2003 C
D1994 D
X
YEAR
2001
2002
2003
1994
1995
1997
199808
1999
2000
WW = (27-52) IF PRE CEDED BY A LETT ER
YEAR
2001
2002
2003
1994
1995
1997
1998KH
1999
W = (1-26) IF PRECEDED BY LAST DIGIT OF CAL ENDAR YEAR
1995
1996
1997
1998
1999
2000
W = (27-52) IF PRECEDED BY A LET TER
1995
1996
1997
1998
1999
2000
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Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)
IRLML6401
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
178.00
( 7.008 )
MAX.
4.1 ( .161 )
3.9 ( .154 )
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.1 ( .043 )
0.9 ( .036 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
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