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l Ultra Low On-Resistance
l N-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
power MOSFETs are well known for, provides
PD - 93757C
IRLML2502
HEXFET® Power MOSFET
1
G
3
D
2
S
Micro3
R
DS(on)
V
DSS
= 20V
= 0.045Ω
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A
I
DM
PD @TA = 25°C Power Dissipation 1.25
PD @TA = 70°C Power Dissipation 0.8
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 33
W
Linear Derating Factor 0.01 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient 75 100 °C/W
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IRLML2502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– 0.035 0.045 VGS = 4.5V, ID = 4.2A
––– 0.050 0.080 VGS = 2.5V, ID = 3.6A
Ω
Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA
Forward Transconductance 5.8 ––– ––– S VDS = 10V, ID = 4.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
= -12V
GS
Total Gate Charge ––– 8.0 12 ID = 4.0A
Gate-to-Source Charge ––– 1.8 2.7 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS = 5.0V
Turn-On Delay Time ––– 7.5 ––– VDD = 10V
Rise Time ––– 10 ––– ID = 1.0A
Turn-Off Delay Time ––– 54 ––– RG = 6Ω
ns
Fall Time ––– 26 ––– RD = 10Ω
Input Capacitance ––– 740 –– – VGS = 0V
Output Capacitance ––– 90 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 66 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
1.3
33
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V
Reverse Recovery Time ––– 16 24 ns TJ = 25°C, IF = 1.3A
Reverse Recovery Charge ––– 8.6 13 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
Page 3
IRLML2502
100
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.25V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Sou rce Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM
2.25V
2.25V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Sou rce Voltage (V)
DS
°
Fig 2. Typical Output Characteristics
2.0
I =
D
4.0A
1.5
°
T = 25 C
J
1.0
(Normalized)
°
T = 150 C
J
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
2.0 2.4 2.8 3.2 3.6 4.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
4.5V
Vs. Temperature
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IRLML2502
1200
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
C
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
iss
oss
C
rss
C SHOR TED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
I =
4.0A
D
V = 10V
DS
8
6
4
2
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
Fig 7. Typical Source-Drain Diode
°
T = 150 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
10us
10
100us
D
I , Drain Current (A)I , Drain Current (A)
1
°
= 25 C
A
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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Page 5
4.0
3.0
2.0
D
I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRLML2502
1000
100
thJA
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty fa cto r D = t / t
2. Peak T = P x Z + T
t , Rectangular Pu lse Dura t ion (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML2502
0.05
)
Ω
(
e
g
a
t
l
o
V
0.04
e
c
r
u
o
S
o
t
-
n
i
a
r
0.03
D
,
)
n
o
(
S
D
R
0.02
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
Gate -to - Source Voltage ( V )
GS,
Id = 4.0A
)
0.30
Ω
(
e
c
n
a
t
s
i
s
e
R
0.20
n
O
e
c
r
u
o
S
-
o
t
-
n
i
0.10
a
r
D
,
)
n
o
(
S
D
0.00
R
0 10203040
VGS = 2.5V
VGS = 4.5V
iD , Drain Current ( A )
Fig 11. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
6 www.irf.com
Page 7
Micro3 Package Outline
Dimensions are shown in millimeters (inches)
IRLML2502
- B -
D
3
LEAD ASSIGNMENTS
1 - GATE
2 - SOURCE
3 - DRAIN
3
E
- A -
- C B 3X
0.10 (.004) M C A S B S
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
3
3
1
2
e
e1
A
A1
H
0.20 ( .008 ) M A M
0.008 (.003)
θ
L
3X 3X
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .032 .044 0.82 1.11
A1 .001 .004 0.02 0.10
B .015 .021 0.38 0.54
C .004 .006 0.10 0.15
D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BASIC 0.95 BASIC
E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
L .005 .010 0.13 0.25
θ
0° 8° 0° 8°
MINIMUM RECOMMENDED FOOTPRINT
C
0.90
( .035 )
3X
0.80 ( .031 )
3X
2.00
( .079 )
0.95 ( .037 )
2X
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Page 8
IRLML2502
Part Marking Information
Micro3
Notes: T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRLML6302
PART NUMBE R
DATE
CODE
PART NUMBER CODE REFERENCE:
1A = IRL ML2402
1B = IRL ML 2803
1C = IRLML6302
1D = IRLML5103
1E = IRL ML 6402
1F = IRL ML6401
1G = IRL ML2502
1H = IRLML5203
DATE CODE E XAMPLE S:
YWW = 9503 = 5C
YWW = 9532 = EF
Notes : This part marki ng information applies to devices produced after 02/26/2001
Y = YEAR
PART NUMBE R
PART NUMBER CODE REFE RENCE:
A = IRL ML2402
B = IRLML2803
C = IRL ML6302
D = IRL ML 5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRL ML 5203
W = WEEK
LOT
CODE
8 www.irf.com
WW = (1-26) IF PRE CEDED BY LAST DIGIT OF CALENDAR YEAR
WOR K
Y
1
2
3
4
5
61996
7
9
Y
A
B
C
D
E
F1996
G
J
Y
5
6
7
8
9
0
E
F
G
H
J
K
WE E K
01
02
03
04
24
25
26
WOR K
WE E K
27
28
29
30
502000
51
52
WORK
WEEK
01
02
03
04
24
25 Y
26 Z
WORK
WEEK
27
28
29
30
50
51 Y
52 Z
W
A
B
C
D
X
Y
Z
W
A
B
C
D
X
Y
Z
WYEAR Y
A2001 1
B2002 2
C2003 3
D1994 4
X
WYEAR
A2001 A
B2002 B
C2003 C
D1994 D
X
YEAR
2001
2002
2003
1994
1995
1997
199808
1999
2000
WW = (27-52) IF PRE CE DED BY A LET TER
YEAR
2001
2002
2003
1994
1995
1997
1998KH
1999
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
1995
1996
1997
1998
1999
2000
W = (27-52) IF PRECEDED BY A LETT ER
1995
1996
1997
1998
1999
2000
Page 9
Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)
IRLML2502
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
178.00
( 7.008 )
MAX.
4.1 ( .161 )
3.9 ( .154 )
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.1 ( .043 )
0.9 ( .036 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
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