Page 1
Advanced Power MOSFET
IRLM110A
FEATURES
ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA(Max.) @ V
ν Lower R
: 0.336 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
V
I
V
E
I
E
dv/dt
TJ, T
DSS
I
DM
AR
P
T
D
GS
AS
AR
D
STG
L
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=70oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
DS
= 100V
(1)
(2)
(1)
(1)
(3)
BV
DSS
R
DS(on)
ID= 1.5 A
SOT-223
1
1. Gate 2. Drain 3. Source
100
1.5
1.18
12
±20
60
1.5
0.22
6.5
2.2
0.018
- 55 to +150
300
= 100 V
= 0.44 Ω
2
3
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
C
o
C
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJA
*
When mounted on the mi nimum pad size recommended (PCB Mount).
Junction-to-Ambient *
o
56.8--
C/W
Rev. A
Page 2
IRLM110A
N-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain (“Miller”) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
100
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.09
--
--
--
--
--
--
2.0
180
50
20
8
10
17
8
5.5
0.9
3.5
--
--
2.0
100
-100
1
100
0.44
--
235
65
25
25
30
45
25
8
--
--
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
=0V,ID=250µA
GS
I
=250µA See Fig 7
D
V
=5V,ID=250µA
DS
V
=20V
GS
V
=-20V
GS
VDS=100V
VDS=80V,TC=125oC
=5V,ID=0.75A
V
GS
VDS=40V,ID=0.75A
VGS=0V,VDS=25V,f =1MHz
VDD=50V,ID=5.6A,
R
=12 Ω
G
VDS=80V,VGS=5V,
I
=5.6A
D
See Fig 6 & Fig 12
See Fig 5
See Fig 13
(6)
(4)
(4)
(4)(5)
(4)(5)
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=40mH, I
③ I
④ Pulse Test : Pulse Width = 250µs, Duty Cycle <
⑤ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=1.5A, VDD=25V, RG=27Ω, Starting TJ =25oC
AS
< 5.6A, di/dt < 250A/μs, V
SD
DD
< BV
, Starting TJ =25oC
DSS
(1)
(4)
2%
--
--
--
--
-85
--
0.23
--
12
1.5
--
--
A
V
ns
µC
1.5
--
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=2.3A,VGS=0V
J
T
=25oC,IF=9.2A
J
di
/dt=100A/µs
F
(4)
Page 3
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
2
10
1
10
, Drain Current [A ]
D
I
0
10
10
Top : 7 .0 V
6 .0 V
5 .5 V
5 .0 V
4 .5 V
4 .0 V
3 .5 V
Bo tto m : 3 .0 V
-1
GS
VDS , Drain-Source Voltage [V]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
IRLM110A
2
10
175 oC
1
10
25 oC
, Drain Current [A ]
D
I
0
1
10
10
0246810
- 55 oC
VGS , Gate-Source Vo ltage [V]
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= 40 V
DS
s Pulse Test
µ
0.08
VGS = 5 V
VGS = 10 V
]
Ω
, [
DS(on)
R
0.06
0.04
0.02
Drain-Source On-Resistance
@ Note : TJ = 25 oC
0.00
0306090120
2500
2000
C
ID , Drain Current [A ]
iss
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
1500
C
oss
1000
Capacitance [pF]
C
rss
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
500
0
0
10
1
10
VDS , Drain-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
2
10
1
10
175 oC
, Reverse Drain C urrent [A]
DR
I
10
25 oC
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
@ Notes :
1. V
2. 250
= 0 V
GS
s Pulse Test
µ
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
6
4
2
, Gate-Source Vo ltage [V]
GS
V
0
0 8 16 24 32 40
QG , Total Gate Char ge [nC]
VDS = 20 V
VDS = 50 V
VDS = 80 V
@ Notes : ID = 28 A
Page 4
IRLM110A
Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature
1.2
3.0
POWER MOSFET
2.5
1.1
2.0
N-CHANNEL
1.0
, (Normalized)
DSS
BV
0.9
@ Notes :
1. V
Drain-Source Breakdown Voltage
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 200
2. I
TJ , Junction Temperature [oC]
Operation in This Area
, Drain Current [A ]
D
I
2
10
1
10
0
10
-1
10
10
@ Notes :
1. T
C
2. T
J
3. Single Pul se
0
is Limited by R
= 25 oC
= 175 oC
VDS , Drain-Source Voltage [V]
DS(on)
1 ms
10 ms
DC
1
10
= 0 V
GS
= 250 µA
D
100 µs
1.5
, (Normalized)
1.0
DS(on)
R
Drain-Source On-Resistance
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
@ Notes :
1. V
2. I
= 5 V
GS
= 14 A
D
TJ , Junction Temperature [oC]
Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area
30
24
18
12
, Drain Current [A ]
D
I
6
2
10
0
25 50 75 100 125 150 175
Tc , Case Temperature [oC]
(t) , Thermal Response
Z
Fig 11. Thermal Response
0
10
D=0.5
0.2
0.1
-1
10
0.05
0.02
0.01
JC
θ
-2
10
-5
10
single pulse
-4
10
t1 , Square Wave Pulse Duration [sec]
-3
10
@ Notes :
1. Z
2. Duty Factor, D=t1/t
(t)=1.24 oC/W Max.
JC
θ
3. TJM-TC=PDM*Z
P
DM
-2
10
-1
10
2
(t)
JC
θ
t
1
t
2
0
10
1
10
Page 5
N-CHANNEL
POWER MOSFET
IRLM110A
Fig 12. Gate Charge Test Circuit & Waveform
12V
10V
* Current Regulator
200nF
3mA
Current Sampling (IG)
V
in
R
G
V
50KΩ
V
out
”
Same Type
V
GS
as DUT
300nF
V
GS
10V
DS
DUT
R
1
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
DUT
R
2
Current Sampling (ID)
Resistor
R
L
V
DD
( 0.5 rated V
V
out
90%
)
DS
10%
V
in
Q
gs
t
d(on)tr
Q
g
Q
gd
Charge
t
d(off)
t
t
on
f
t
off
Vary tpto obtain
required peak I
5V
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BV
L
DUT
L
BV
I
D
C
V
DD
DSS
I
AS
V
DD
V
DS
D
R
G
t
p
E
=LL I
AS
1
---2
2
--------------------
AS
ID (t)
t
p
BV
DSS
DSS
-- V
DD
Time
V
(t)
DS
Page 6
IRLM110A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
V
GS
V
GS
( Driver )
DUT
+
V
DS
--
I
S
L
V
GS
Driver
R
G
D =
Same Type
as DUT
• dv/dt controlled by ＂R
controlled by Duty Factor ＂D＂
•I
S
Gate P ulse Width
-------------------------Gate Pulse Period
V
DD
＂
G
10V
I
S
( DUT )
V
DS
( DUT )
IFM, Body Diode Forward Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
Body Diode
Forward Voltage Drop
di/dt
V
DD
Page 7
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
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Rev. H4
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