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PD- 91379C
IRLL3303
HEXFET® Power MOSFET
l Surface Mount
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 6.5
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 4.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.7
I
DM
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 1.3 V/ns
T
J, TSTG
Pulsed Drain Current 37
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 140 mJ
Avalanche Current 4.6 A
Repetitive Avalanche Energy 0.10 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
R
θJA
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Junction-to-Amb. (PCB Mount, steady state)* 93 120
Junction-to-Amb. (PCB Mount, steady state)** 48 60
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D
S
SOT-223
R
DS(on)
V
= 30V
DSS
= 0.031Ω
ID = 4.6A
A
°C/W
1/22/99
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IRLL3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.031 VGS = 10V, ID = 4.6A
––– ––– 0.045 VGS = 4.5V, ID = 2.3A
Ω
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 5.5 ––– ––– S VDS = 10V, ID = 2.3A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -16V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 16V
––– ––– 25 VDS = 30V, VGS = 0V
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 34 50 ID = 4.6A
Gate-to-Source Charge ––– 4.4 6.5 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 10 16 VGS = 10V, See Fig. 6 and 9
Turn-On Delay Time ––– 7.2 ––– VDD = 15V
Rise Time ––– 22 ––– ID = 4.6A
Turn-Off Delay Time ––– 33 ––– RG = 6.2Ω
ns
Fall Time ––– 28 ––– RD = 3.2Ω, See Fig. 10
Input Capacitance ––– 840 –– – VGS = 0V
Output Capacitance ––– 34 0 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode) showing the
Pulsed Source Current
(Body Diode) p-n junction diode.
––– –––
––– –––
0.91
37
MOSFET symbol
A
integral reverse
Diode Forward Voltage ––– ––– 1 .3 V TJ = 25°C, IS = 4.6A, VGS = 0V
Reverse Recovery Time ––– 65 98 ns TJ = 25°C, IF = 4.6A
Reverse RecoveryCharge –– – 160 240 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Specification changes
Rev. # Parameters Old spec. New spec. Comments Revision Date
1V
1V
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 15V, starting TJ = 25°C, L = 13mH
DD
RG = 25Ω, I
(Max.) 2.5V No spec. Removed V
GS(th)
(Max.) ±20 ±16 Decrease V
GS
I
≤ 4.6A, di/dt ≤ 110A/µs, V
SD
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 4.6A. (See Figure 12)
AS
(Max). Specification 11/1/96
GS(th)
(Max). Specification 11/1/96
GS
DD
≤ V
(BR)DSS
,
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IRLL3303
A
A
A
A
100
VGS
TO P 15 V
10V
7.0 V
5.5 V
4.5 V
4.0 V
3.5 V
BOTTOM 3.0V
10
3.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25° C
1
0.1 1 10
V , Dra in -to -So urce Vo lta g e (V )
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
2.0
I = 4.6 A
D
1.5
1.0
10
T = 25°C
J
T = 150°C
J
(N ormali z ed )
0.5
D
I , D rain-to -S o urce C u rren t (A )
1
3.0 3.5 4.0 4.5 5.0 5.5
V , Gate-to-Source Voltage (V)
GS
V = 10V
DS
20µs PULSE WIDTH
DS (on)
R , D ra in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
V = 10 V
GS
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLL3303
)
A
)
A
)
g
A
A
1600
1400
1200
1000
800
600
C, Capacitance (pF)
400
200
0
1 10 100
V = 0V, f = 1MH z
GS
C = C + C , C S H O RTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds g d
C
iss
C
oss
C
rss
V , Dra in- to -S o u rc e Volt age (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 4 . 6 A
D
16
12
8
4
GS
V , Gate - to-S o ur ce Volta g e (V)
0
0 1020304050
Q , Tota l G a te Ch a rge (nC
G
V = 2 4 V
DS
V = 1 5 V
DS
FOR TEST CIRCUIT
SE E F IG U RE 9
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OP ER A T IO N IN TH IS A RE A L IMITED
BY R
DS(on)
10
T = 150°C
J
T = 25°C
SD
I , R ev er se D r a in Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-to-Drain Voltage (V)
SD
J
V = 0V
Fig 7. Typical Source-Drain Diode
GS
10
D
I , Drain Current (A)
T = 25 °C
A
T = 15 0 °C
J
Sin
le Puls e
1
0.1 1 10 100
V , Dra in- to -S o u rc e Vo ltage (V
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
10ms
Forward Voltage
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10V
V
IRLL3303
R
D.U.T.
D
+
V
-
DD
V
Q
G
Q
GS
Q
GD
R
G
DS
V
GS
G
10V
Pulse Width ≤ 1 µs
Charge
Duty Factor ≤ 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
DS
-
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
3mA
I
G
Current Sampling Resistors
I
D
Fig 9b. Gate Charge Test Circuit
1000
100
D = 0.50
th JA
Therm al Response (Z )
0.01
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000
SIN G L E P U L S E
(THERMAL RESP ON SE)
t , Rectangular Pulse Duration (sec)
1
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
P
DM
t
1
t
Note s:
1. Du ty fac tor D = t / t
2. Pea k T = P x Z + T
J
DM
2
1
thJA
2
A
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLL3303
A
)
A
15V
DRIVER
+
-
V
DD
R
20V
V
DS
G
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
350
I
TO P 2.1A
300
250
200
150
100
50
AS
V = 15 V
E , S ing le Pul s e A v a lan c he Ener g y (mJ )
DD
0
25 50 75 100 125 150
Starting T , Junction Temperature (°C
J
3.7 A
BOTTOM 4.6A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
I
AS
Fig 12b. Unclamped Inductive Waveforms
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IRLL3303
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 13. For N-Channel HEXFETS
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IRLL3303
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
SOT-223
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EX AM PL E : TH IS IS A N IRF L 01 4
FL014
INTERNATIONAL
R EC TIF IER
L OGO
314
TOP
PART NU MBE R
DATE CODE (YWW )
Y = LAST D IGIT OF THE YEAR
WW = WEEK
W A FE R
L OT C ODE
XXXXXX
BOTTOM
Page 9
Tape & Reel Information
SOT-223 Outline
IRLL3303
4.10 (.161)
2.05 (.080)
330.00
(13.000)
MAX.
1.95 (.077)
12.10 (.475)
11.90 (.469)
13.20 (.519)
12.80 (.504)
TR
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. O UTLINE CONFORMS TO EIA-481 & EIA-541.
3. EAC H O 330.00 (13.00) RE EL CO NTA INS 2,500 DEV ICES.
3.90 (.154)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
1.60 (.062)
1.50 (.059)
TY P .
7.10 (.279)
6.90 (.272)
15.40 (.607)
11.90 (.469)
4
7.60 (.299)
7.40 (.292)
0.35 (.013)
0.25 (.010)
16.30 (.641)
15.70 (.619)
2.30 (.090)
2.10 (.083)
50.00 (1.969)
MIN.
NOTES :
1. OUTLINE CO M FO R M S T O EIA-418-1.
2. CONTROLLING DIMENSIO N: MILLIMETER..
3. DIMENSIO N MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
3
18.40 (.724)
M A X .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 1/99
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