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PD - 91894
IRLL2703
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
G
D
R
S
SOT -223
V
DSS
DS(on)
ID = 3.9A
= 30V
= 0.045Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 5.5
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.9
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.1
I
DM
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 16
Linear Derating Factor (PCB Mount)* 8.3 mW/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 180 mJ
Avalanche Current 3.9 A
Repetitive Avalanche Energy* 0.1 mJ
Junction and Storage Temperature Range -55 to + 150 °C
A
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
R
θJA
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
Junction-to-Amb. (PCB Mount, steady state)* 90 120
Junction-to-Amb. (PCB Mount, steady state)** 50 60
°C/W
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IRLL2703
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.045 VGS = 10V, ID = 3.9A
Static Drain-to-Source On-Resistance
––– ––– 0.060 Ω VGS = 5.0V, ID = 3.1A
––– ––– 0.070 VGS = 4.0V, ID = 2.0A
Gate Threshold Voltage 1.0 ––– 2.4 V VDS = VGS, ID = 250µA
Forward Transconductance 5.9 ––– ––– S VDS = 25V, ID = 2.3 A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
VDS = 30V, VGS = 0V
µA
VGS = 16V
nA
Total Gate Charge ––– 9 .3 14 ID = 2.3A
Gate-to-Source Charge ––– 2.3 3.4 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 5.1 7.6 VGS = 5.0V, See Fig. 6 and 9
Turn-On Delay Time ––– 7.4 – –– VDD = 15V
Rise Time ––– 24 –––
Turn-Off Delay Time ––– 6.9 ––– RG = 6.2 Ω
ns
ID = 2.3A
Fall Time ––– 14 ––– RD = 6.5 Ω, See Fig. 10
Input Capacitance ––– 530 ––– VGS = 0V
Output Capacitance ––– 2 30 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 95 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 16
3.9
A
Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.3A, VGS = 0V
Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = 2.3A
Reverse RecoveryCharge ––– 62 94 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 24 mH
J
= 3.9A. (See Figure 12)
AS
I
≤ 2.3A, di/dt ≤ 150A/µs, V
SD
DD
≤ V
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
,
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IRLL2703
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
3.9A
1.5
10
1
D
I , Drain-to-Source Current (A)
0.1
2.0 3.0 4.0 5.0 6.0 7.0
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = 25V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRLL2703
1000
800
600
400
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
iss
C
oss
f = 1MHz
C
+ C
C
C
+ C
C SHORTED
C, Capacitance (pF)
200
0
1 10 100
C
rss
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I =
2.3A
D
V = 24V
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16
Q , Total Gate Charge (nC)
G
DS
V = 15V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
Fig 7. Typical Source-Drain Diode
°
T = 150 C
J
°
T = 25 C
J
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
100us
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRLL2703
(
)
4.0
3.0
2.0
D
I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
R
V
DS
V
GS
R
G
D
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
100
thJA
D = 0.50
0.20
0.10
10
0.05
P
1 2
DM
t
1
t
2
0.02
0.01
1
Thermal Response (Z )
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
SINGLE PULSE
THERMAL RESPONSE
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLL2703
A
15V
DRIVE R
+
-
V
DD
R
V
G
10V
DS
L
D.U.T
I
AS
Ω
t
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
500
TOP
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
1.7A
3.1A
3.9A
°
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same T ype as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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Page 7
Package Outline
SOT-223 (TO-261AA) Outline
IRLL2703
Part Marking Information
SOT-223
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EX AM PL E : TH IS IS A N IRFL014
FL014
INTERNATIONAL
R EC TIF IER
L OGO
314
TOP
PART NU MBE R
DATE CODE (YWW )
Y = LAST D IGIT OF THE YEAR
WW = WEEK
W AF E R
L OT C ODE
XXXXXX
BOTTOM
Page 8
IRLL2703
Tape & Reel Information
SOT-223 Outline
4.10 (.161)
2.05 (.080)
330.00
(13.000)
MAX.
1.95 (.077)
12.10 (.475)
11.90 (.469)
13.20 (.519)
12.80 (.504)
TR
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. O UTLINE CONFORMS TO EIA-481 & EIA-541.
3. EAC H O330.00 (13.00) RE EL CON TAINS 2,500 DEVICES .
3.90 (.154)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
1.60 (.062)
1.50 (.059)
TY P .
7.10 (.279)
6.90 (.272)
15.40 (.607)
11.90 (.469)
4
7.60 (.299)
7.40 (.292)
0.35 (.013)
0.25 (.010)
16.30 (.641)
15.70 (.619)
2.30 (.090)
2.10 (.083)
50.00 (1.969)
MIN.
NOTES :
1. OUTLINE CO M FO R M S T O EIA-418-1.
2. CO NTRO LLING DIMENSIO N: MILLIMETER..
3. DIMENSIO N MEASURED @ HUB.
4. INCLUDES FLANGE DISTOR TION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
3
18.40 (.724)
M A X .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 6/99
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