Datasheet irll024nq Datasheet

PD-94152

AUTOMOTIVE MOSFET

IRLL024NQ

Typical Applications

● Electronic Fuel Injection

● Active Suspension

● Power Doors, Windows & Seats

● Cruise Control

● Air Bags

Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Repetitive Avalanche Allowed up to Tjmax

● Dynamic dv/dt Rating

● Automotive [Q101] Qualified

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET in a SOT-223 package utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this Automotive qualified HEXFET Power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SOT-223 package is designed for surface mount and the enlarged tab provides improved thermal characteristics making it ideal in a variety of power applications. Power dissipation of 1.0W is possible in a typical surface mount application. Available in Tape & Reel.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 3.1 ID @ TC = 70°C Continuous Drain Current, VGS @ 4.5V 2.6 A I

DM

PD @TC = 25°C Power DissipationS 1.3 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt U 9.9 V/ns T

J, TSTG

Pulsed Drain Current Q 12

Linear Derating Factor 8.3 mW/°C Gate-to-Source Voltage ±16 V Single Pulse Avalanche EnergyT 87 mJ Avalanche CurrentQ See Fig.16c, 16d, 19, 20 A Repetitive Avalanche EnergyV mJ

Junction and Storage Temperature Range -55 to + 175 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

R

θJA

* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Junction-to-Amb. (PCB Mount, steady state)* 90 120 Junction-to-Amb. (PCB Mount, steady state)** 50 60

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HEXFET® Power MOSFET

D

R

DS(on)

V

DSS

= 55V

= 0.065Ω

ID = 3.1A

S

SOT-223

°C/W

03/16/01

IRLL024NQ

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.065 VGS = 10V, ID = 3.1A R ––– ––– 0.080 VGS = 5.0V, ID = 2.5A R

mΩ

Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA Forward Transconductance 4.5 ––– ––– SVDS = 25V, ID = 1.9A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V

––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C

µA

nA

GS

= 16V

Total Gate Charge ––– 11 17 ID = 1.9A Gate-to-Source Charge ––– 1.9 ––– nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– 4.3 ––– VGS = 10V Turn-On Delay Time ––– 12 ––– VDD = 28V R Rise Time ––– 41 ––– ID = 1.9A Turn-Off Delay Time ––– 48 ––– RG = 24Ω

ns

Fall Time ––– 39 ––– RD = 15Ω Input Capacitance ––– 508 ––– VGS = 0V Output Capacitance ––– 141 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 62 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode) Q p-n junction diode.

–––

3.1

12

A

G

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.9A, VGS = 0VR Reverse Recovery Time ––– 40 60 ns TJ = 25°C, IF = 1.9A Reverse Recovery Charge ––– 65 97 nC di/dt = 100A/µs

R

Notes:

Q Repetitive rating; pulse width limited by

max. junction temperature.

R Pulse width ≤ 400µs; duty cycle ≤ 2%. S Surface mounted on 1 in square Cu board

T Starting T

RG = 25Ω, I

U I

SD

= 25°C, L = 18mH

J

AS

≤ 1.9A, di/dt ≤ 197A/µs, V TJ ≤ 175°C VLimited by T

Jmax

= 3.1A. (See Figure 12).

DD

≤ V

(BR)DSS

,

, see Fig.16c, 16d, 19, 20 for typical repetitive

avalanche performance.

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D

S

IRFLL024NQ

100

10

1

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

15V 10V

7.0V

5.5V

4.5V

4.0V



3.5V

BOTTOM

2.7V

20µs PULSE WIDTH T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100.00

100

10

1

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

15V 10V

7.0V

5.5V

4.5V

4.0V



3.5V

BOTTOM

2.7V

20µs PULSE WIDTH T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.5

I =

D

3.1A

)

(Α

10.00

, Drain-to-Source Current

D

I

1.00

Fig 3. Typical Transfer Characteristics

TJ = 175°C

TJ = 25°C

V

= 15V

DS

20µs PULSE WIDTH

1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0

VGS, Gate-to-Source Voltage (V)

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRLL024NQ

10000

1000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

ds

+ C

oss

+ Cgd, C

gd

Ciss

Coss

100

C, Capacitance(pF)

10

1 10 100

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

SHORTED

ds

6

I =

3.1A

D

5

4

2

1

GS

V , Gate-to-Source Voltage (V)

0

0 3 6 9 12 15

V = 44V

DS

V = 27V

DS

V = 11V

DS

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

10

°

T = 175 C

J

10

100µsec

1msec

°

1

SD

I , Reverse Drain Current (A)

0.1

0.3 0.5 0.7 1.0 1.2

V ,Source-to-Drain Voltage (V)

SD

T = 25 C

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

1

, Drain-to-Source Current (A)

D

Tc = 25°C

I

10msec

Tj = 175°C Single Pulse

0.1 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRFLL024NQ

5.0

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1000

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

100

thJC

D = 0.50

0.20

0.10

10

0.05 P

0.02

0.01

1

Thermal Response (Z )

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

DM

t



1 2

1

t

2

Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLL024NQ

)

0.10

Ω

0.09

0.08

0.07

0.06

, Drain-to -Source On Resistance (

DS(on)

0.05

R

3.0 5.0 7.0 9.0 11.0 13.0 15.0

-V

GS,

ID = 3.1A

Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs. Gate

Voltage

2.0

)

0.400

Ω

0.350

0.300

0.250

0.200

0.150

, Drain-to-Source On Resistance (

0.100

DS (on)

R

0.050 0 1020304050607080

ID , Drain Current (A)

V

GS

= 10V

Fig 13. Typical On-Resistance Vs. Drain

Current

60

1.8

1.6

1.4

1.2

Gate threshold Voltage (V)

1.0

GS(th)

V

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( °C )

ID = 250µA

Fig 14. Typical Threshold Voltage Vs.

50

40

30

Power (W)

20

10

0

1.00 10.00 100.00 1000.00

Time (sec)

Fig 15. Typical Power Vs. Time

Junction Temperature

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IRFLL024NQ

A

250

TOP

200

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J



BOTTOM

Fig 16a. Maximum Avalanche Energy

Vs. Drain Current

I

D

1.3A

2.6A

3.1A

°

15V

DRIVER

+

-

V

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 16c. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

DD

I

AS

Fig 16d. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

Fig 17. Gate Charge Test Circuit

V

GS

+

V

DS

-

Q

GS

V

G

Fig 18. Basic Gate Charge Waveform

G

Q

GD

Charge

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IRLL024NQ

1000

100

Duty Cycle = Single Pulse

Allowed avalanche Current vs

10

avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

1

0.1

Avalanche Current (A)

0.01

0.001

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

0.01

0.05

0.10

tav (sec)

Fig 19. Typical Avalanche Current Vs.Pulsewidth

90

TOP Single Pulse

80

70

60

50

40

30

, Avalanche Energy (mJ)

20

AR

E

10

0

25 50 75 100 125 150 175

BOTTOM 10% Duty Cycle ID = 3.1A

Starting TJ , Junction Temperature (°C)

Fig 20. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

. This is validated for

jmax

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) =

D (ave)

∆∆

I

2

∆T/ [1.3·BV·Zth]

∆∆

av =

E

AS (AR)

= P

·f

av

D (ave)·tav

∆∆

∆T/ Z

∆∆

thJC

jmax

is

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Package Outline

)

SOT-223

IRFLL024NQ

Part Marking Information

SOT-223

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EX AM P LE : TH IS IS AN IRFL 014

FL014 INTERN ATIONA L R ECTIF IER

L OG O

314

TOP

PART NU MBE R

DATE CODE (YW W Y = LAST D IGIT OF THE YE AR WW = WEEK

W AFER L OT C OD E

XXXXXX

BOTTOM

IRLL024NQ

)

(

)

Tape & Reel Information

SOT-223

4.10 (.161

2.05 (.080

330.00

13.000

MAX.

1.95 (.077

12.10 (.475

11.90 (.469

13.20 (.519

12.80 (.504

TR

FEED DIRECTIO N

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFO RMS TO EIA-481 & EIA-541.

3. EACH O 330.00 (13.00) REEL CONTAINS 2,500 DEVICES.

3.90 (.154

1.85 (.072

1.65 (.065

7.55 (.297

7.45 (.294

1.60 (.062

1.50 (.059 TY P .

7.10 (.279

6.90 (.272

15.40 (.607

11.90 (.469

4

7.60 (.299

7.40 (.292

0.35 (.013

0.25 (.010

16.30 (.641

15.70 (.619

2.30 (.0 9 0

2.10 (.0 8 3

50.00 (1.969 MIN.

NOTES :

1. OUTLINE CO M FO R M S T O EIA-418-1.

2. CONTROLLING DIMENSIO N: MILLIMETER..

3. DIMENSIO N MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566

12.40 (.488

3

18.40 (.724 M A X .

4

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101]

market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/01

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