Datasheet IRLL 024N Datasheet

l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

PD - 95221

IRLL024NPbF

HEXFET® Power MOSFET

D

G

S

SOT-223

R

DS(on)

V

= 55V

DSS

= 0.065Ω

ID = 3.1A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.4 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 3.1 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.5 I

DM

PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J, TSTG

Pulsed Drain Current  12

Linear Derating Factor (PCB Mount)* 8.3 mW/°C Gate-to-Source Voltage ± 16 V Single Pulse Avalanche Energy 120 mJ Avalanche Current 3.1 A Repetitive Avalanche Energy* 0.1 mJ

Junction and Storage Temperature Range -55 to + 150 °C

A

Thermal Resistance

Parameter Typ. Max. Units

R

θJA

R

θJA

* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.

Junction-to-Amb. (PCB Mount, steady state)* 90 120 Junction-to-Amb. (PCB Mount, steady state)** 50 60

°C/W

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04/27/04

IRLL024NPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.048 ––– V/°C Reference to 25°C, ID = 1mA

J

––– ––– 0.065 VGS = 10V, ID = 3.1A 

Static Drain-to-Source On-Resistance

––– ––– 0.080 Ω VGS = 5.0V, ID = 2.5A 

––– ––– 0.100 VGS = 4.0V, ID = 1.6A  Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA Forward Transconductance 3.3 ––– ––– S VDS = 25V, ID = 1.9 A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V

VDS = 55V, VGS = 0V

µA

V

= 16V

GS

nA

Total Gate Charge ––– 10.4 15.6 ID = 1.9A Gate-to-Source Charge ––– 1.5 2 .3 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– 5.5 8 .3 VGS = 5.0V, See Fig. 6 and 9  Turn-On Delay Time ––– 7.4 –– – VDD = 28V Rise Time ––– 21 ––– Turn-Off Delay Time ––– 18 ––– RG = 24 Ω

ns

ID = 1.9A

Fall Time ––– 25 ––– RD = 15 Ω, See Fig. 10  Input Capacitance –– – 510 ––– VGS = 0V Output Capacitance ––– 140 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 58 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) showing the Pulsed Source Current integral reverse (Body Diode)  p-n junction diode.

––– –––

––– ––– 12

3.1 A

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.9A, VGS = 0V  Reverse Recovery Time ––– 39 58 ns TJ = 25°C, IF = 1.9A Reverse RecoveryCharge ––– 63 94 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

= 25°C, L = 25 mH

J

= 3.1A. (See Figure 12)

AS

 I

≤ 1.9A, di/dt ≤ 270A/µs, V

SD

DD

≤ V

TJ ≤ 150°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

(BR)DSS

,

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IRLL024NPbF

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

100

VGS

TOP

15V 10V

7.0V

5.5V

4.5V

4.0V



3.5V

BOTTOM

2.7V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 25 C



J

T = 150 C



J

°

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

7.0V

5.5V

4.5V

4.0V



3.5V

BOTTOM

2.7V

20µs PULSE WIDTH



T = 150 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

1.5

3.1A

I =



D

10

D

I , Drain-to-Source Current (A)

V = 25V

DS



1

2 4 6 8 10 12

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =



10V

GS

°

Vs. Temperature

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IRLL024NPbF

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V, C C C

C



C

iss



oss



rss

f = 1MHz

+ C + C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

15

I =

1.9A

D



12

9

6

3

GS

V , Gate-to-Source Voltage (V)

0

0 4 8 12 16 20

Q , Total Gate Charge (nC)

G

V = 44V

DS

V = 27V

DS



V = 11V

DS

FOR TEST CIRCUIT



SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on)

13

10

°

T = 150 C



J

1

°

T = 25 C



SD

I , Reverse Drain Current (A)

0.1

0.4 0.6 0.8 1.0 1.2 1.4

V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V



GS

Fig 7. Typical Source-Drain Diode

10

1

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C



Single Pulse

0.1

0.1 1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS



100us



1ms



10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRLL024NPbF

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0 25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1000

R

V

DS

V

GS

R

G

5.0V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

100

thJA

D = 0.50

0.20

0.10

10

0.05 P

0.02

0.01

1

Thermal Response (Z )

Notes:

SINGLE PULSE



0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRLL024NPbF

A

15V

DRIVER

+

-

V

DD

R

V

G

10V

DS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

300

TOP

250

200

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J



BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

D

1.4A

2.5A

3.1A

°

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

5.0 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

Fig 13b. Gate Charge Test Circuit

DS

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SOT-223 (TO-261AA) Package Outline

Dimensions are shown in milimeters (inches)

IRLL024NPbF

SOT-223 (TO-261AA) Part Marking Information

H E X F E T PR ODU CT MAR K ING

T HIS IS AN IRFL014

INTERNATIONAL

RE CT IFIE R

LOGO

F L014

314P

TOP

PART NUMBER

DAT E CODE (YYWW) YY = YEAR WW = WEEK

P = DESIGNAT ES LEAD-FREE

PR ODUCT (OPT IONAL )

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LOT CODE

A = AS S E MB LY SIT E

CODE

AX XX X

BOTTOM

IRLL024NPbF

)

(

)

(

)

SOT-223 (TO-261AA) Tape & Reel Information

Dimensions are shown in milimeters (inches)

4.10 (.16 1

2.05 (.080

330.00

13.000

MAX.

1.95 (.077

12.10 (.475

11.90 (.469

13.20 (.519

12.80 (.504

TR

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION: MILLIMETER.

2. OUTLINE CONFO RM S TO EIA-481 & EIA-541.

3. EACH O 330.00 (13.00) REE L CONTAINS 2,500 D EVICE S.

3.90 (.15 4

1.85 (.072

1.65 (.065

.29 7

7.55

7.45 (.29 4

1.60 (.0 6 2

1.50 (.0 5 9 TY P .

7.10 (.279

6.90 (.272

15.40 (.60 7

11.90 (.46 9

4

7.60 (.29 9

7.40 (.29 2

0.35 (.013

0.25 (.010

16.30 (.64 1

15.70 (.61 9

2.30 (.090

2.10 (.083

50.00 (1.969 MIN.

NOTES :

1. O U T LIN E C O M F O R MS T O E IA -4 1 8 -1 .

2. CONTRO LLING DIMENSION: MILLIMETER..

3. DIMENSIO N MEASURE D @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

14.40 (.566

12.40 (.488

3

18.40 (.724 M A X .

4

Data and specifications subject to change without notice.

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