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PD - 95387
S
D
G
SOT-223
Document Number: 91319
www.vishay.com
1
IRLL014PbF
HEXFET® Power MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Logic-Level Gate Drive
(on) Specified at VGS=4V & 5V
l R
DS
l Fast Switching
l Ease of Paralleling
l Lead-Free
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10 V 2.7
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 1.7
I
DM
PD @Tc = 25°C Power Dissipation 3.1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J, TSTG
Pulsed Drain Current 22
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
Gate-to-Source Voltage -/+10 V
Single Pulse Avalanche Energy 100 mJ
Avalanche Current 2.7 A
Repetitive Avalanche Energy 0.31 mJ
Junction and Storage Temperature Range -55 to + 150
Soldewring Temperature, for 10 seconds
300 (1.6mm from case)
V
DSS
R
DS(on)
ID = 2.7A
= 60V
= 0.20Ω
°C
A
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Junction-to-PCB ––– 40
Junction-to-Ambient. (PCB Mount)** –– – 60
°C/W
06/10/04
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IRLL014PbF
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Document Number: 91319
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Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
(BR)DSS
g
gs
gd
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.20 V
––– ––– 0.28 Ω V
= 5.0V, ID = 1.6A
GS
= 4.0V, ID = 1.4A
GS
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.2 ––– ––– S VDS = 25V, ID = 1.6 A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 60V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 8 . 4 ID = 10A
Gate-to-Source Charge ––– ––– 3.5 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 6.0 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 9.3 ––– VDD = 30V
Rise Time ––– 110 –––
Turn-Off Delay Time ––– 17 ––– RG = 12 Ω
ns
ID = 10A
tf Fall Time –– 26 ––– RD = 2.8 Ω, See Fig. 10
L
D
L
S Internal Source Inductance
C
iss
C
oss
C
rss
Internal Drain Inductance
Input Capacitance ––– 400 ––– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5
––– 4.0 –––
––– 6.0 –––
Between lead, 6mm(0.25in)
nH
from package and center
of die contact.
G
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD=
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 2.7A, VGS = 0V
Reverse Recovery Time ––– 65 130 ns TJ = 25°C, IF = 10A
Reverse RecoveryCharge ––– 0.33 0.65 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 10A, di/dt ≤ 90A/µs, V
SD
TJ ≤ 150°C
25V, starting TJ = 25°C, L =16 mH
= 2.7A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2.7
22
A
DD
≤ V
(BR)DSS
,
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Document Number: 91319
www.vishay.com
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Document Number: 91319
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Document Number: 91319
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Document Number: 91319
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SOT-223 (TO-261AA) Package Outline
Document Number: 91319
www.vishay.com
7
Dimensions are shown in milimeters (inches)
IRLL014PbF
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT M ARKING
THIS IS AN IRFL014
INTERNATIONAL
RECTIFIER
LOGO
FL014
TOP
PA RT NUM BER
314P
DATE CODE
(YYWW)
YY = YEAR
WW = WE EK
P = DES IGNAT ES LE AD-F RE E
PRODU CT (OPTIONAL)
LOT C ODE
A = ASSEMBLY SITE
CODE
AXX XX
BOTTOM
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IRLL014PbF
)
)
Document Number: 91319
www.vishay.com
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SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
2.05 (.080)
330.00
(13.000)
MAX.
1.95 (.077)
12.10 (.475)
11.90 (.469)
13.20 (.519)
12.80 (.504)
TR
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3.90 (.154)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
1.60 (.062)
1.50 (.059)
TYP.
7.10 (.279)
6.90 (.272)
15.40 (.607)
11.90 (.469)
4
7.60 (.299)
7.40 (.292)
0.35 (.013)
0.25 (.010)
50.00 (1.969)
MIN.
16.30 (.641
15.70 (.619
2.30 (.090)
2.10 (.083)
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
3
18.40 (.724)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
06/04
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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