Datasheet irli3303 Datasheet

PD - _____

PRELIMINARY

IRLI3303

HEXFET® Power MOSFET

Logic-Level Gate Drive
Advanced Process Technology

V

= 30V

R

DS(on)

DSS

= 0.026Ω

ID = 25A

Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 25
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 18 A
I

DM

PD @TC = 25°C Power Dissipation 31 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 2.6 V/ns
T

J

T

STG

Pulsed Drain Current  140

Linear Derating Factor 0.21 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 130 mJ
Avalanche Current 20 A
Repetitive Avalanche Current 5.6 mJ

Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θJA

Junction-to-Case –––– –––– 4.8
Junction-to-Ambient –––– –––– 65 °C/W

Parameter Min. Typ. Max. Units

8/24/95

IRLI3303

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.026 VGS = 10V, ID = 15A
––– ––– 0.040 VGS = 4.5V, ID = 13A

Ω

Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 12 ––– ––– S VDS = 25V, ID = 20A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

––– ––– 25 VDS = 30V, VGS = 0V
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C

µA

nA

Total Gate Charge ––– ––– 26 ID = 20A
Gate-to-Source Charge ––– ––– 8.8 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.4 ––– VDD = 15V
Rise Time ––– 200 ––– ID = 20A
Turn-Off Delay Time ––– 14 ––– RG = 6.5Ω, VGS = 4.5V

ns
Fall Time ––– 36 ––– RD = 0.70Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 870 ––– VGS = 0V
Output Capacitance ––– 340 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

DD

RG = 25Ω, I

I

SD

TJ ≤ 175°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

––– ––– 25

––– ––– 140

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 15A, VGS = 0V
Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 20A
Reverse RecoveryCharge ––– 180 280 nC di/dt = 100A/µs

Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 470µH

= 20A. (See Figure 12)

AS

≤ 20A, di/dt ≤ 140A/µs, V

DD

≤ V

(BR)DSS

,

t=60s, ƒ=60Hz V

Uses IRL3303 data and test conditions

A

IRLI3303

A

A

A

A

1000

VGS
TOP 15V
12V
10V

8.0V

6.0V

4.0V

3.0V

100

BOTTOM 2.5V

10

1

D

I , Drain-to-Source Current (A)

2.5V
20µs PULSE WIDTH

T = 25°C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics,

TJ = 25oC

1000

1000

VGS
TOP 15V
12V
10V

8.0V

6.0V

4.0V

3.0V

100

BOTTOM 2.5V

10

2.5V

1

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH
T = 175°C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics,

TJ = 175oC

2.0

I = 34A

D

100

10

1

D

I , Drain-to-Source Current (A)

0.1
2 3 4 5 6 7 8 9 10

T = 25°C

J

T = 175°C

J

V = 15V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 10V

GS

IRLI3303

A

A

A

A

1600

1400

1200

1000

800

600

C, Capacitance (pF)

400

200

0

1 10 100

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

15

I = 20A

D

12

9

6

3

GS

V , Gate-to-Source Voltage (V)

V = 24V

DS

V = 15V

DS

FOR TEST CIR C UIT

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

SEE FIGURE 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

100

T = 175°C

J

T = 25°C

10

SD

I , Reverse Drain Current (A)

1

0.0 0.5 1.0 1.5 2.0 2.5

V , Source-to-Drain Voltage (V)

SD

J

V = 0V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

100

10

D

I , Drain Current (A)

T = 25°C

C

T = 175°C

J

Single Pulse

1

1 10 100

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10µs

100µs

1ms

10ms

IRLI3303

A

R

D.U.T.

D

V

DD

V

25

R

20

DS

V

GS

G

5.0V

15

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

10

D

I , Drain Current (Amps)

5

0

25 50 75 100 125 150 175

T , Case Temperature (°C)

C

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Case Temperature

10

D = 0.50

thJC

0.20

1

0.10

0.05

0.02

0.1

Thermal Response (Z )

0.01

0.01

SINGLE PULSE
(THERMAL RESPONSE)

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty fac tor D = t / t

2. Pea k T = P x Z + T

DM

J

P

D M

t

1

t

2

2

1

thJC

C

A

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRLI3303

A

5.0 V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

300

250

200

150

100

50

AS

V = 15V

E , Single Pulse Avalanche Energy (mJ)

DD

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C)

J

I
TOP 8.3A
14A
BOTTOM 20A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

5.0 V

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRLI3303

Peak Diode Recovery dv/dt Test Circuit

D.U.T

R

G

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

V

DD

*

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

IRLI3303

A

Package Outline

TO-220 FullPak Outline

Dimensions are shown in millimeters (inches)

10.60 (.417)

10.40 (.409)

16.00 (.630)

15.80 (.622)

1 2 3

13.70 (.540)

13.50 (.530)

1.40 (.055)

3X

1.05 (.042)

2.54 (.100)
2X

3X

Part Marking Information

TO-220 FullPak

EXAMPLE : THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE E401

3.40 (.133)

ø

3.10 (.123)

- A -

3.70 (.145)

3.20 (.126)

1.15 (.045)
MIN.

3.30 (.130)

3.10 (.122)

- B -

0.90 (.035)

0.70 (.028)

0.25 (.010)MA M B

4.80 (.189)

4.60 (.181)

7.10 (.280)

6.70 (.263)

INTERNATIONAL
RECTIFIER
LOGO

ASSEMBLY
LOT CODE

2.80 (.110)

2.60 (.102)

NOTES:
1 DIMENSIONING & TOLERANCING

PER ANSI Y14.5M, 1982
2 CONTROLLING DIMENSION: INCH.

0.48 (.019)

3X

0.44 (.017)

2.85 (.112)

2.65 (.104)

LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE

MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)

PART NUMBER

IRFI840G

E401 9245

DATE CODE
(YYWW)
YY = YEAR
WW = WEEK

C

D

A

B

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: [phone]

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: [phone] IR GERMANY: Saalburgstrasse 157,

61350 Bad Homburg Tel: [phone] IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: [phone] IR FAR EAST: K&H Bldg.,
2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: [phone] IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan
Boon Liat Building, 0316 Tel: [phone]

Data and specifications subject to change without notice.