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PD - 9.1384B
TO-220 FULLPAK
PRELIMINARY
IRLI2910
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A
I
DM
PD @TC = 25°C Power Dissipation 63 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 190
Linear Derating Factor 0.42 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy 520 mJ
Avalanche Current 29 A
Repetitive Avalanche Energy 6.3 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 2.4 °C/W
Junction-to-Ambient ––– 65 °C/W
D
V
R
DS(on)
= 100V
DSS
= 0.026Ω
ID = 31A
S
°C
3/16/98
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IRLI2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
J
––– ––– 0.026 VGS = 10V, ID = 16A
Static Drain-to-Source On-Resistance
––– ––– 0.030 Ω VGS = 5.0V, ID = 16A
––– ––– 0.040 VGS = 4.0V, ID = 14A
Gate Threshold Voltage 1.0 –– – 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 28 ––– ––– S VDS = 50V, ID = 29A
Drain-to-Source Leakage Current
––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– –– – -100 VGS = -16V
µA
nA
VGS = 16V
Total Gate Charge ––– ––– 140 ID = 29A
Gate-to-Source Charge ––– ––– 20 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 1 00 –– –
Turn-Off Delay Time – –– 49 – –– RG = 1.4Ω, VGS = 5.0V
ns
ID = 29A
Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3700 ––– VGS = 0V
Output Capacitance ––– 630 ––– VDS = 25V
Reverse Transfer Capacitance ––– 330 –– – ƒ = 1.0MHz, See Fig. 5
pF
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
31
190
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V
Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A
Reverse RecoveryCharge ––– 1.8 2.7 µC di/dt = 100A/µs
D
G
S
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
= 25V, starting TJ = 25°C, L = 1.2mH
DD
RG = 25Ω, I
I
≤ 29A, di/dt ≤ 490A/µs, V
SD
TJ ≤ 175°C
= 29A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, ƒ=60Hz
,
Uses IRL2910 data and test conditions
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IRLI2910
A
A
)
A
A
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , D ra in-to -S o u rc e C u rre nt ( A )
2.5V
20µs PU LS E WIDTH
T = 25°C
1
0.1 1 10 100
V , D rain-to-Source Vo ltage (V)
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
D
I , D ra in-to -S o u rc e C u rre nt ( A )
2.5V
20µs PU LS E WIDTH
T = 175°C
1
0.1 1 10 100
V , D rain-to-Source Vo ltage (V)
DS
J
Fig 2. Typical Output Characteristics
3.0
I = 4 8A
D
T = 25°C
100
10
D
I , D rain-to-Source Current (A)
1
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V , Ga te-to-S o urc e V o l tage (V
GS
J
T = 175°C
J
V = 50V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(N o rma liz ed )
1.0
0.5
DS(on)
R , D ra in -to -S o u rc e O n R e s is tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Tem pe rature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10 V
GS
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IRLI2910
A
A
A
A
6000
5000
4000
3000
2000
C, Capacitance (pF)
1000
0
1 10 100
V = 0V, f = 1M H z
GS
C = C + C , C SH OR TED
iss g s gd d s
C = C
rss g d
C
C = C + C
iss
oss d s g d
C
oss
C
rss
V , D rain-to -Source V oltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 2 9 A
V , G a te -to -S o ur ce Vo ltag e (V )
12
GS
D
9
6
3
V = 8 0 V
DS
V = 5 0 V
DS
V = 2 0 V
DS
FOR TEST CIRCUIT
0
0 40 80 120 160 200
Q , T o ta l Ga te C h a rg e (n C)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O P E R A T IO N IN T H IS A R EA LIMITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
SD
I , R everse Drain Current (A)
10
0.4 0.8 1.2 1.6 2.0
V , So urce-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
I , Drain Current (A )
T = 2 5 ° C
C
T = 175°C
J
Single Pulse
1
1 10 100 1000
V , D rain-to-S ource V oltage (V)
DS
10µs
100µs
1ms
10ms
Fig 8. Maximum Safe Operating
Area
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IRLI2910
35
30
25
20
15
D
10
I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
D = 0.50
1
0.20
0.10
P
1 2
DM
t
1
t
2
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLI2910
A
A
15V
DRIVER
R
G
20V
V
DS
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test
Circuit
V
(BR )D S S
t
p
1400
1200
1000
800
+
V
DD
-
600
400
200
AS
V = 25 V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TO P 12A
20A
BOTTOM 29A
D
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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IRLI2910
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
Page 8
IRLI2910
A
A
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
16.00 (.630)
15.80 (.622)
1 2 3
13.70 (.540)
13.50 (.530)
1.40 (.055)
3X
1.05 (.042)
2.54 (.100)
2 X
3X
Part Marking Information
TO-220 Fullpak
E X A MP L E : T HIS IS A N IRF I84 0 G
EXAMPLE : THIS IS AN IRF1010
W IT H AS S EMB L Y
WITH ASSEMBLY
L OT C ODE E4 0 1
LO T C O D E 9 B 1 M
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
0.90 (.035)
0.70 (.028)
0.25 (.010)
3.40 (.133)
ø
3.10 (.123)
- A -
- B -
M
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
A M B
INTERNATIONA L
INTERNATIONAL
RECTIFIER
R E CT IF IER
LO GO
L OG O
ASSEMBLY
ASSEMBLY
L O T C O DE
LO T C OD E
2.80 (.110)
2.60 (.102)
NOTES:
1 DIMENSIONING & TOLERANCING
PE R ANSI Y14.5M, 1982
2 CONTROLLING DIMENSION: INCH.
0.48 (.019)
3X
0.44 (.017)
2.85 (.112)
2.65 (.104)
IRF1010
IRFI840G
LEAD ASSIGNMENTS
1 - G ATE
2 - D RA IN
3 - SO URCE
MINIMU M CREEPAGE
DISTANCE BETW E EN
A-B-C-D = 4.80 (.189)
PART NUMBER
PART NUM BER
9246
E401 9245
9B 1M
DATE CODE
DATE CODE
(YYW W)
(YYWW )
YY = YE AR
YY = YEAR
WW = WEEK
WW = WEEK
C
D
A
B
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice. 3/98
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