Datasheet IRLHS6342PBF Datasheet

G 3

S

D2

D1

4S

5D

6D

TOP VIEW

D

Absolute Maximum Ratings

GS

D

DM

Pulsed Drain Current

c

Power Dissipat ion

g

Power Dissipat ion

g

Linear Derating Factor

W/°C

J

STG

IRLHS6342PbF

IRLHS6342TR2PbF

PQFN 2mm x 2mm

Tape and Reel

400

EOL notice # 259

Standar d Pack

DSon

≤

HEXFET® Power MOSFET

V

DS

V

GS

R

DS(on) max

(@VGS = 4.5V)

Q

g (typical)

I

D

(@T

C (Bottom)

= 25°C)

30 V

12 V

±

15.5

11

12

i

m

nC

Ω

A

2mm x 2mm PQFN

Applications

• Charge and discharge switch for battery application

• System/Load Switch

Features and Benefits

Features Result ing Benefits

Low R Low Thermal Resistance to PCB ( Low Profile ( Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability

(≤ 15.5mΩ) Lower Conduction Losses

13°C/W) Enable better thermal dissipation

0.9 mm) results in Increased Power Density Easier Manufact uring Environmentally Friendlier

D

S

G

S

Orderable part number Package Type

IRLHS6342TRPbF PQFN 2mm x 2mm Tape and Reel 4000

V

DS

V

@ TA = 25°C

I

@ TA = 70°C

I

PD @TA = 25°C

PD @TA = 70°C

T

@ T

C(Bottom)

= 25°C

= 70°C

= 25°C

Notes  through  are on page 2

Parameter Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

g

Operating Junction and

Storage Temperature Range

Form Quantity

@ 10V

GS

@ 10V

GS

@ 10V

GS

@ 10V

GS

@ 10V (Wirebond Limited)

GS

Max.

30

±12

8.7

6.9

hi

19

hi

15

i

12

76

2.1

1.3

0.02

-55 to + 150

Note

V

A

W

°C

Thermal Resistance

θ

JC

Junction-to-Case

g

R

θ

JC

(Top)

Junction-to-Case

g

–––

90

θ

JA

Junction-to-Ambient

f

R

θ

JA

Junction-to-Ambient (<10s)

f

–––

42

Static @ TJ = 25°C (unless otherwise specified)

ΔΒ

Δ

–––

Avalanche Characteristics

Single Pulse Avalanche Energy

d

Avalanche Current

c

Diode Characteristics

(Body Diode)

Parameter Min. Typ. Max. Units

BV

DSS

V

/ΔT

DSS

J

R

DS(on)

V

GS(th)

V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 39 ––– ––– S Q

g

Q

gs

Q

gd

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C

Static Drain-to-Source On-Resistance ––– 12.0 15.5

––– 15.0 19.5

mΩ

Gate Threshold Voltage 0.5 ––– 1.1 V

Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 11 –––

Gate-to-Source Charge ––– 0.5 –––

Gate-to-Drain Charge ––– 4.6 –––

Gate Resistance ––– 2.1 Turn-On Delay Time ––– 4.9 –––

Rise Time –––13–––

Turn-Off Delay Time ––– 19 –––

Fall Time ––– 13 –––

Input Capacitance ––– 1019 –––

Output Capacitance ––– 97 –––

Reverse Transfer Capacitance ––– 70 –––

IRLHS6342PbF

VGS = 0V, ID = 250μA

Reference to 25°C, I

= 4.5V, ID = 8.5A

V

GS

V

= 2.5V, ID = 8.5A

GS

V

= VGS, ID = 10μA

DS

V

= 24V, VGS = 0V

DS

μA

V

= 24V, VGS = 0V, TJ = 125°C

DS

= 12V

V

GS

nA

nC V

Ω

ns

pF

= -12V

V

GS

= 10V, ID = 8.5A

V

DS

= 15V

V

DS

= 4.5V

GS

I

= 8.5A (See Fig. 6 & 17)

D

= 15V, VGS = 4.5V

V

DD

= 8.5A

I

D

Ω

=1.8

R

G

See Fig.18

= 0V

V

GS

= 25V

V

DS

ƒ = 1.0MHz

Conditions

= 1mA

D

e e

Parameter Units

E

AS

I

AR

Typ.

–––

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current

(Body Diode) Pulsed Source Current

c

––– ––– 12

––– ––– 76

i

Diode Forward Voltage ––– ––– 1.2 V

Reverse Recovery Time ––– 11 17 ns

Reverse Recovery Charge ––– 13 20 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

Parameter Typ. Max. Units

(Bottom)

R

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Starting T

= 25°C, L = 0.39mH, RG = 50Ω, I

J

AS

= 8.5A.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 R

is measured at T

θ

of approximately 90°C.

J

 When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

 Calculated continuous current based on maximum allowable junction temperature.

 Package is limited to 12A by die-source to lead-frame bonding technology

Max.

14

8.5

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. TJ = 25°C, IS = 8.5A, VGS = 0V

= 25°C, IF = 8.5A, VDD = 15V

T

J

di/dt = 300 A/μs

e

––– 13

––– 60

mJ

A

D

G

S

e

°C/W

IRLHS6342PbF

100

TOP 10V

) A

( t n e

r

10

r u

C e

c

r u o S

o

t

-

1

n

i a

r D

,

D

I

1.4V

60μs PULSE WIDTH

≤

BOTTOM 1.4V

Tj = 25°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

( t

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TJ = 150°C

TJ = 25°C

10

V

= 15V

DS

≤

60μs PULSE WIDTH

1.0

1.0 1.5 2.0 2.5 3.0 3.5

VGS, Gate-to-Source Voltage (V)

VGS

4.5V

3.0V

2.5V

2.0V

1.8V

1.5V

100

) A

( t n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r D

,

D

I

1.4V

60μs PULSE WIDTH

≤

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

e c n a

t s

i s e

R n O

)

e c

d

r

e

u

z

i

o

l a

S

m

o

r

t

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

ID = 8.5A

V

1.8 GS

= 4.5V

1.6

1.4

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 1.4V

VGS

4.5V

3.0V

2.5V

2.0V

1.8V

1.5V

Fig 3. Typical Transfer Characteristics

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

+ Cgd, C

gs

gd

+ C

ds

C

iss

C

oss

C

rss

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 4. Normalized On-Resistance vs. Temperature

14.0 ID= 8.5A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

VDS= 24V

VDS= 15V

VDS= 6.0V

0.0 0 5 10 15 20 25 30

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

IRLHS6342PbF

100

) A

( t n e

r

r u

C n

i a

r

10

D e

s

r e v e

R ,

D S

I

1.0

TJ = 150°C

TJ = 25°C

V

= 0V

GS

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

20

18

16

)

14

A

( t n

12

e

r

r u

C

10

n

i a

r

8

D ,

6

D

I

4

2

0

25 50 75 100 125 150

TC , Case Temperature (°C)

Limited By Package

Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D ,

D

I

Limited by Wire Bond

1

Tc = 25°C Tj = 150°C Single Pulse

0.1 0 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100μsec

1msec

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

1.6

)

1.4

V

( e

g

1.2

a

t

l o V

1.0

d

l o h s e

0.8

r h

t e

t a

G ,

) h

t

( S G

V

ID = 10μA

0.6

ID = 25μA

ID = 250μA

0.4

ID = 1.0mA

0.2

ID = 1.0A

0.0

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

100

W

/ C

°

10

)

Z (

e s n o p s e

R l a

m

r e h T

C J h

t

0.01

0.1

D = 0.50

0.20

1

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

IRLHS6342PbF

)

30

Ω

m (

e c n a

25

t s

i s e

R n

20

O e

c

r u o S

-

15

o

t

n

i a

r D

10

,

) n o

( S D

5

R

TJ = 125°C

TJ = 25°C

0 2 4 6 8 10 12 14

V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

60

) J

m

( y

50

g

r e n E

e

40

h c n a

l a v

30

A e

s

l u P

20

e

l g n

i S ,

10

S A

E

0

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

TOP 1.9A

BOTTOM8.5A

ID = 8.5A

I

D

3.4A

)

30

Ω

m

(

28

e c n a

26

t s

i s e

24

R n

22

O e

c

r

20

u o S

-

18

o

t

n

i

16

a

r D

14

,

) n o

12

(

S D

10

R

Vgs = 2.5V

Vgs = 4.5V

5 15 25 35 45 55 65 75

ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

600

500

) W

(

400

r e

w o P

300

e s

l u P

e

l

200

g n

i S

100

0

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Time (sec)

Fig 14. Maximum Avalanche Energy vs. Drain Current





D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

+

-

Reverse Recovery Current

Re-Applied Voltage

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

Fig 15. Typical Power vs. Time

P.W.

GS

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

*

IRLHS6342PbF

A

Vds

Id

Vgs

L

VCC

0

1K

Fig 17a. Gate Charge Test Circuit

V

DS

DUT

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 17b. Gate Charge Waveform

V

15V

L

DRIVER

t

p

(BR)DSS

R

G

20V

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

Fig 18a. Unclamped Inductive Test Circuit

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1

Fig 19a. Switching Time Test Circuit

I

AS

Fig 18b. Unclamped Inductive Waveforms

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 19b. Switching Time Waveforms

PQFN 2x2 Outline Package Details

IRLHS6342PbF

For footprint and stencil design recommendations, please refer to application note AN-1154 at

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 2x2 Outline Part Marking

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

PQFN 2x2 Outline Tape and Reel

IRLHS6342PbF

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

IRLHS6342PbF

Date

Comments

•

Updated data sheet with new IR corporate template

Revision History

Qualificat ion information

Qualific ation level

Moisture Sensitivity Level

RoHS c ompliant Yes

†

Industrial

(per JEDEC JESD47F

PQFN 2mm x 2mm

†

††

guidelines )

MS L 1

(per JEDEC J-STD-020D

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Applicable version of JEDEC standard at the time of product release.

•

Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)

12/17/2013

•

Updated Qual level from "Consumer" to "Industrial" on page 1, 9

††

)

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

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Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

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Technologies, Infineon Technologies’ products may

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