Datasheet IRLHS6276PBF Datasheet

/

IRLHS6276PbF

HEXFET® Power MOSFET

V

DS

V

GS

R

DS(on) max

(@VGS = 4.5V)

R

DS(on) max

(@VGS = 2.5V)

I

D

(@T

c(Bottom)

= 25°C)

20 V

12 V

±

45

62 m

3.4

d

m

7239,(

:

Ω

A

6

*

'

)(7

'

'



*

'



6



2mm x 2mm Dual PQFN

G2

S2

Applications

• Charge and discharge switch for battery application

• Load/System Switch

Features and Benefits

Features Resulting Benefits

Low R Low Thermal Resistance to PCB (≤ 19°C Low Profile (≤ 1.0mm) results in Increased Power Density

Industry-Standard Pinout Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier

(≤ 45mΩ) Lower Conduction Losses

DSon

W) Enable better thermal dissipation

⇒

Multi-Vendor Compatibility

D1

D2

S1

G1

D2

Orderable part number Package Type Standard Pack

Form Quantity

IRLHS6276TRPBF PQFN Dual 2mm x 2mm Tape and Reel 4000

IRLHS6276TR2PBF

PQFN Dual 2mm x 2mm Tape and Reel 400 EOL notice #259

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

@ TA = 25°C

I

D

I

@ TA = 70°C

D

I

@ T

D

I

@ T

D

I

@ T

D

I

DM

PD @TA = 25°C

PD @T

T

J

T

STG

C(Bottom)

= 25°C

= 100°C

= 25°C

Notes  through  are on page 2

Drain-to-S ource Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Continuous Drain Current, V Pulsed Drain Current

Power Dissipation

Linear Derating Factor Operating Junction and

Storage Temperature Range

c f f

f

@ 4.5V

GS

@ 4.5V

GS

@ 4.5V

GS

@ 4.5V

GS

@ 4.5V (Package Limited)

GS

Max.

20

±12

d

4.5

d

3.6

d

9.6

d

6.1

d

3.4

40

1.5

6.6

0.012

-55 to + 150

Note

V

A

W

W/°C

°C

Th

l Resist

Static @ TJ = 25°C (unless otherwise specified)

–

(

)

Parameter Min. Typ. Max. Units

BV

DSS

/∆T

∆ΒV

DSS

J

R

DS(on)

V

GS(th)

∆V

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 8.8 ––– ––– S Q

g

Q

gs

Q

gd

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 9.3 ––– mV/°C

Static Drain-to-Source On-Resistance ––– 33 45

––– 46 62

mΩ

Gate Threshold Voltage 0.5 0.8 1.1 V

Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

h

Gate Resistance ––– 4.0

––– 3.1 –––

–––0.22–––

––– 1.3 –––

––

Turn-On Delay Time ––– 4.4 –––

Rise Time ––– 9.3 –––

Turn-Off Delay Time ––– 10 –––

Fall Time ––– 4.9 –––

Input Capacitance ––– 310 –––

Output Capacitance ––– 79 –––

Reverse Transfer Capacitance ––– 49 –––

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current

(Body Diode) Pulsed Source Current

Body Diode

c

––– ––– 9.6

––– ––– 40

d

Diode Forward Voltage ––– ––– 1.2 V

Reverse Recovery Time ––– 5.2 7.8 ns

Reverse Recovery Charge ––– 5.0 7.5 nC

Forward Turn-On Time Time is dominated by parasitic Inductance

IRLHS6276PbF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

= 4.5V, ID = 3.4A

V

GS

= 2.5V, ID = 3.4A

V

GS

= VGS, ID = 10µA

V

DS

= 16V, VGS = 0V

V

DS

µA

VDS = 16V, VGS = 0V, TJ = 125°C

= 12V

V

GS

nA

nC

Ω

ns

pF

A

= -12V

V

GS

= 10V, ID = 3.4A

V

DS

V

= 10V

DS

= 4.5V

V

GS

= 3.4Ad (See Fig.17 & 18)

I

D

V

= 10V, VGS = 4.5V

DD

G

=1.8

d

Ω

ID = 3.4A

R

See Fig.15

VGS = 0V

= 10V

V

DS

ƒ = 1.0MHz

Conditions

MOSFET symbol

showing the integral reverse

p-n junction diode. TJ = 25°C, IS = 3.4Ad, VGS = 0V

T

= 25°C, IF = 3.4Ad, VDD = 10V

J

di/dt = 126A/µs

e

= 1mA

D

ed ed

d

D

G

S

e

erma

ance

Parameter Typ. Max. Units

R

JC

θ

R

θJC

R

JA

θ

R

θJA

Notes:

(Bottom) (Top)

(<10s)

Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient

g g

f f

––– 19 ––– 175 ––– 86 ––– 69

°C/W

 Repetitive rating; pulse width limited by max. junction temperature.  Current limited by package.  Pulse width ≤ 400µs; duty cycle ≤ 2%.  When mounted on 1 inch square copper board.

 R

is measured at T

θ

of approximately 90°C.

J

 For DESIGN AID ONLY, not subject to production testing.

IRLHS6276PbF

100

TOP 10V

) A

(

10

t n e

r

r u

C e

c

r

1

u o S

o

t

n

i a

r

0.1

D ,

D

I

1.4V

≤

BOTTOM 1.4V

60µs PULSE WIDTH

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

) A

(

t n e

r

10

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TJ = 150°C

1

TJ = 25°C

V

DS

≤

60µs PULSE WIDTH

= 10V

0.1

0.0 1.0 2.0 3.0 4.0 5.0

VGS, Gate-to-Source Voltage (V)

VGS

4.5V

3.0V

2.5V

2.0V

1.8V

1.5V

100

) A

( t n e

r

10

r u

C e

c

r u o S

o

t

-

1

n

i a

r D

,

D

I

1.4V

60µs PULSE WIDTH

≤

Tj = 150°C

0.1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.6

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 3.4A

V

= 4.5V

GS

1.4

)

1.2

d e z

i

l a

m

r

1.0

o N

(

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 1.4V

VGS

4.5V

3.0V

2.5V

2.0V

1.8V

1.5V

Fig 3. Typical Transfer Characteristics

10000

) F p

( e

c n a

t

i c a p a

C ,

C

1000

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

C

iss

C

oss

C

rss

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

14.0 ID= 3.4A

12.0

) V

( e

g

10.0

a

t

l o V

e

8.0

c

r u o S

-

6.0

o

t

e

t a

4.0

G ,

S G

V

2.0

0.0

VDS= 16V

VDS= 10V

VDS= 4.0V

0246810

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage

IRLHS6276PbF

100

) A

( t n e

r

10

r u

C n

i a

r D e

s

r e v

1

e R

,

D S

I

0.1

TJ = 150°C

TJ = 25°C

V

= 0V

GS

0.0 0.4 0.8 1.2 1.6 2.0

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

10

9

8

)

7

A

( t n

6

e

r

r u

C

5

n

i a

r

4

D ,

3

D

I

2

1

0

25 50 75 100 125 150

TC , Case Temperature (°C)

Limited By Package

Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature

100

) A

( t n e

r

10

u C e

c

r u o S

o

t

n

i a

r D ,

D

I

Limited by Wire Bond

1

Tc = 25°C Tj = 150°C Single Pulse

0.1

0 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

1msec

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

1.2

) V

( e

1.0

g a

t

l o V

d

l

0.8

o h s e

r h

t e

0.6

t a

G ,

) h

t

(

0.4

S G

V

0.2

-75 -50 -25 0 25 50 75 100 125 150

ID = 25µA

TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

100

W

/ C

°

10

)

C J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.1

0.01

D = 0.50

0.20

0.10

1

1E-006 1E-005 0.0001 0.001 0.01 0.1

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

IRLHS6276PbF

)

100

Ω

m (

e c n

80

a

t s

i s e

R n

60

O e

c

r u o S

-

40

o

t

n

i a

r D

20

,

) n o

( S D

0

R

TJ = 125°C

TJ = 25°C

ID = 3.4A

0 2 4 6 8 10 12

V

Gate -to -Source Voltage (V)

GS,

Fig 12. On-Resistance vs. Gate Voltage

60

) J

m

( y

50

g

r e n E

e

40

h c n a

l a v

30

A e

s

l u P

20

e

l g n

i S ,

10

S A

E

TOP 0.89A

BOTTOM3.4A

I

D

1.8A

0

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

)

250

Ω

m

( e

c n a

200

t s

i s e

R n

150

O e

c

r u o S

-

100

o

t

n

i a

r D

50

,

) n o

(

S D

0

R

V

GS =

2.5V

V

GS =

4.5V

0 5 10 15 20 25 30

ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

1000

800

) W

( r e

600

w o P

e s

l u P

400

e

l g n

i S

200

0

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

Time (sec)

Fig 15. Typical Power vs. Time





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

IRLHS6276PbF

A

Vds

Id

Vgs

L

VCC

0

1K

Fig 17a. Gate Charge Test Circuit

V

DS

DUT

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Fig 17b. Gate Charge Waveform

V

15V

L

DRIVER

t

p

(BR)DSS

R

G

20V

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

Fig 18a. Unclamped Inductive Test Circuit

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1

Fig 19a. Switching Time Test Circuit

I

AS

Fig 18b. Unclamped Inductive Waveforms

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 19b. Switching Time Waveforms

PQFN Dual 2x2 Outline Package Details

IRLHS6276PbF

For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:

http://www.irf.com/technical-info/appnotes/an-1136.pdf

For more information on package inspection techniques, please refer to application note AN-1154:

http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN Dual 2x2 Outline Part Marking

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

PQFN Dual 2x2 Outline Tape and Reel

IRLHS6276PbF

Qualificat ion information

†

Industrial

Qualification level

Moisture Sensitivity Level

(per JE DEC JE S D47F

PQFN Dual 2mm x 2mm

††

(per JEDEC J-S T D-020D

RoHS compliant Yes

 Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

 Applicable version of JEDEC standard at the time of product release.

guideli nes )

MS L 1

††

)

Revision History

Date Comment

1/9/2014

Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).

•

Updated data sheet with the new IR corporate template.

•

Updated the qualification level from Consumer to Industrial level.

•

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(

www.infineon.com

).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.