Datasheet irlf230 Datasheet

HEXFET

®

TRANSISTOR

Provisional Data Sheet No. PD-9.1614

IRLF230

N-CHANNEL

200Volt, 0.40

ΩΩ

Ω, HEXFET

ΩΩ

The Logic Level ‘L ’ series of power MOSFETs are
designed to be operated with level logic gate-to­source voltage of 5V. In addition to the well es-

Product Summary

Part Number BVDSS RDS(on) ID

IRLF230 200V 0.40Ω 5.2A

tablished characteristics of HEXFETs, they have
the added advantage of providing low drive re­quirements to interface power loads to logic level
IC’s and microprocessors.

Fields of application include: high speed power
applications such as switching regulators, switch­ing converters, motor drivers, solenoid and re­lay drivers.

Features:

n Dynamic dv/dt Rating
n Logic Level Gate Drive

n RDS(on) Specific at V

150°C Operating Temperature

n

n Fast Switching
n Ease of Paralleling

GS = 4V & 5V

The HEXFET technology is the key to International
Rectifier’s advance line of logic level power
MOSFET transistors. The efficient geometry and
unique processing of the HEXFET achieve very
low on-state resistance combine with high
transconductance.

Absolute Maximum Ratings

Parameter IRLF230 Units

ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current 5.2

ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current 3.3

I

DM

PD @ TC = 25°C Max. Power Dissipation 25 W

V

GS

dv/dt Peak Diode Recover y dv/dt  4.2

T

J

T

STG

Pulsed Drain Current  20

Linear Derating Factor 0.20 W/K 
Gate-to-Source Voltage ±10 V

Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature

Weight 0.98 (typical) g

300(0.063 in.(1.6mm) from case for 10s)

A

V/ns

o

C

4/7/97

IRLF230

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

(on)

d

t

r

t

(off)

d

t

f

L

D

L

S

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 250µA

/∆TJTemperature Coefficient of Breakdown — 0.28 — V/°C Reference to 25°C, ID =

Voltage
Static Drain-to-Source — — 0.40 VGS = 5.0V, ID = 3.1A
On-State Resistance — — 0.50
Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.5 — — S ( )VDS > 15V, IDS = 3.1A 
Zero Gate Voltage Drain Current — — 25 VDS= 0.8 x Max Rating,VGS=0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 10 V
Gate-to-Source Leakage Reverse — — -100 VGS = -10V

Ω

Ω

µA

nA

Total Gate Charge — — 41 VGS = 5.0V, ID = 5.2A
Gate-to-Source Charge — — 4.9 nC VDS = Max Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 21
Tur n-On Delay Time — — 9.4 VDD = 100V, ID = 5.2A,
Rise Time — — 34 RG = 6.0Ω
Tur n-Off Delay Time — — 43

ns

Fall Time — — 26
Internal Drain Inductance — 5.0 —

Internal Source Inductance — 15 —

Measured from drain lead,
6mm (0.25 in) from package
to center of die.

nH

Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.

VGS = 4.0V, ID = 2.6A

VGS = 0V, TJ = 125°C

Modified MOSFET
ing the internal inductances.

symbol show-

250µA



C

iss

C

oss

C

rss

Input Capacitance — 1100 — VGS = 0V, VDS = 25 V
Output Capacitance — 230 — pF f = 1.0MHz
Reverse Transfer Capacitance — 61 —

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

I

Continuous Source Current (Body Diode) — — 5.2

S

I

Pulse Source Current (Body Diode)  —— 20

SM

VSDDiode Forward Voltage — — 2.0 V Tj = 25°C, IS = 5.2A, VGS = 0V 
t

Reverse Recovery Time — — 250 ns Tj = 25°C, IF = 5.2A, di/dt ≤ 100A/µs

rr

Q

Reverse Recover y Charge — — 1.7 µCV

RR

t

Forward T urn-On Time

on

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Modified MOSFET symbol

A

showing the integral reverse
p-n junction rectifier.

≤ 50V 

DD

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R
R

thJC
thJA

Junction-to-Case — — 5.0
Junction-to-Ambient — — 175 K/W Typical socket mount

IRLF230

100

10

D

I , Drain-to-Source Current (A)

TOP

BOTTOM

VGS
15V
12V
10V

8.0V

6.0V

4.0V

3.0V

2.5V

2.5V
20µs PULSE WIDTH

T = 25 C

1

1 10 100

V , Drain-to-Source Voltage (V)

DS

100

J

100

10

D

I , Drain-to-Source Current (A)

°

1

VGS

TOP

15V
12V
10V

8.0V

6.0V

4.0V

3.0V

BOTTOM

2.5V

2.5V

20µs PULSE WIDTH

°

T = 150 C

J

1 10 100

V , Drain-to-Source Voltage (V)

DS

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

I =

D

5.2A

°

T = 25 C

J

10

1

D

I , Drain-to-Source Current (A)

0.1

2.0 3.0 4.0 5.0 6.0

V , Gate-to-Source Voltage (V)

GS

°

T = 150 C

J

V = 50V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V =

GS

°

5.0V

IRLF230

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED

C
C

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

15

I =

5.2A

D

V = 160V

DS

12

9

6

3

GS

V , Gate-to-Source Voltage (V)

V = 100V

DS

V = 40V

DS

FOR TEST CIRCUIT

0

0 10 20 30 40 50

Q , Total Gate Charge (nC)

G

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

12

10

°

T = 150 C

J

°

T = 25 C

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

Fig 7. Typical Source-Drain Diode

Forward Voltage

GS

10us

10

100us

1ms

1

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C
Single Pulse

0.1
1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

10ms

Fig 8. Maximum Safe Operating Area

IRLF230

+

-

6.0

5.0

4.0

3.0

2.0

D

I , Drain Current (A)

1.0

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

D

D.U.T.

5.0V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

0.50

thJC

0.20

1

0.10

0.05

0.02

0.01

0.1
SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangular Pulse Duration (sec)

1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

J DM thJC C

1 2

P

DM

t

1

t

2

IRLF230

5.0 V

V

G

Current Regulator

Same Type as D.U.T.

50KΩ

5.0V

Q

G

Q

GS

Q

GD

12V

.2µF

V

GS

3mA

.3µF

D.U.T.

+

V

DS

-

Charge

Fig 12a. Basic Gate Charge Waveform

I

G

Current Sampling Resistors

I

D

Fig 12b. Gate Charge Test Circuit

IRLF230

Notes:

 I

 Repetitive Rating; Pulse width limited by

maximum junction temperature.
Refer to current HEXFET reliability report .

 K/W = °C/W

≤ 5.2A, di/dt ≤ 270 A/µs,

SD
VDD ≤ BV
Suggested R

 Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

, TJ ≤ 150°C

DSS

= 2.35Ω

G

Case Outline and Dimensions — T O-205AF (Modified TO-39)

All dimensions are shown millimeters (inches)

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http://www.irf.com/ Data and specifications subject to change without notice. 4/97