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PD - 90639A
REPETITIVE A VALANCHE AND d v/dt RATED IRLF120
HEXFETTRANSISTORS 100V, N-CHANNEL
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS RDS(on) ID
IRLF120 100V 0.35Ω 5.3A
The Logic Level ‘L’ series of power MOSFETs are de-
signed to be operated with level logic gate-to-source
voltage of 5V. In addition to the well established
characterstics of HEXFETs
vantage of providing low drive requirements to inter-
face power loads to logic le vel IC’ s and microprocessors.
Fields of applications include: high speed power appli-
cations such as switching regulators, switching converters, motor drivers, solenoid and relay drivers and
drivers for high power bipolar switching transistors requiring high speed and low gatedrive voltage.
The HEXFET technology is the key to International
Rectifier’s advanced line of logic level power MOSFET
transistors. The efficient geometry and unique processing of the HEXFET achieve very low on-state resistance
combined with high transconductance and great device ruggedness.
.
Absolute Maximum Ratings
ID @ VGS = 5.0V, TC = 25°C Continuous Drain Current 5.3
ID @ VGS = 5.0V, TC = 100°C Continuous Drain Current 3.4
I
DM
PD @ TC = 25°C Max. Power Dissipation 20 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.5
T
J
T
STG
,
they have the added ad-
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Low Drive Requirements
n Execellent Temperature Stability
n Fast Switching Speeds
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Parameter Units
Pulsed Drain Current ➀ 21
Linear Derating Factor 0.16 W/°C
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy ➁ 120 mJ
Avalanche Current ➀ 5.3 A
Repetitive Avalanche Energy ➀ 2.0 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
A
V/ns
o
C
For footnotes refer to the last page
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08/08/01
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IRLF120
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
∆BV
R
V
g
I
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
GSS
GSS
d(on)
r
d(off)
f
DSS
DSS
DS(on)
GS(th)
fs
g
gs
gd
S + LD
iss
oss
rss
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 250µA
/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID =
Voltage
Static Drain-to-Source On-State — — 0.35 VGS = 5.0V, ID = 3.2A ➃
Resistance — — 0.42 VGS = 4.0V, ID = 2.7A ➃
Gate Threshold Voltage 1.0 — 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.1 — — S ( )VDS = 50V, IDS = 3.2A ➃
Zero Gate Voltage Drain Current — — 250 VDS= 100V, VGS=0V
— — 1000 µA VDS = 80V
Gate-to-Source Leakage Forward — — 100 VGS = 10V
Gate-to-Source Leakage Reverse — — -100 nA VGS = -10V
Total Gate Charge — — 13 VGS =5.0V, ID = 5.3A
Gate-to-Source Charge — — 2.4 nC VDS= 80V
Gate-to-Drain (‘Miller’) Charge — — 7.1
Turn-On Delay Time — — 13 VDD = 50V , ID = 5.3A,
Rise Time — — 53 VGS =5.0V, RG = 18Ω
Turn-Off Delay Time — — 30
Fall Time — — 27
Total Inductance — 7.0 —
Input Capacitance — 480 VGS = 0V, VDS = 25V
Output Capacitance — 150 — pF f = 1.0MHz
Reverse Transfer Capacitance — 30 —
Ω
Ω
ns
nH
250µA
VGS = 0V , TJ = 125°C
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 5.3
S
I
Pulse Source Current (Body Diode) ➀ —— 21
SM
V
Diode Forward Voltage — — 2.5 V Tj = 25°C, IS = 5.3A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 220 nS Tj = 25°C, IF = 5.3A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 1.1 µC VDD ≤ 50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 6.25
Junction-to-Ambient — — 175 T ypical socket mount.
°C/W
+ LD.
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IRLF120
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLF120
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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Fig 9. Maximum Drain Current Vs.
Case Temperature
IRLF120
R
D.U.T.
t
d(off)tf
D
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
+
V
DD
-
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLF120
A
15V
DRIVER
+
-
R
G
V
20V
V
DS
GS
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )DS S
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
Q
GD
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
DS
-
V
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
GS
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
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Foot Notes:
➂ I
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ V
= 25 V, Starting TJ = 25°C, L= 6.1mH
DD
Peak IAS = 5.3A, V
=5.0V, RG= 25Ω
GS
≤ 5.3A, di/dt ≤ 110A/µs,
SD
VDD≤ 100V , TJ ≤ 150°C
Suggested RG =18 Ω
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-205AF ( TO-39)
IRLF120
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
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