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HEXFET® Power MOSFET
pak
2
Pak
G
l >1mm lower profile than D
l Same footprint as D
2
l Logic Level Gate
l Surface mount
l Ultra Low On-Resistance
l Fully Avalanche Rated
l 50% greater current in typ. application
condition vs. D2Pak
Description
The HEXFET® MOSFET is the most popular power MOSFET in the world.
PD- 91843A
IRLBL1304
D
V
= 40V
DSS
R
S
= 0.0045Ω
DS(on)
ID = 185A
This particular HEXFET
®
MOSFET is in the SuperD2Pak
TM
and has
the same
outline and pinout as the standard D2Pak but has increased current handling
capability and >1mm lower profile. This makes it ideal to reduce component
count in multiparallel D2Pak operation, reduce system power dissipation or
upgrade existing design.
This package has also been designed to meet automotive qualification
standard Q101 and can be used with normal surface mouting equipment
Super-D2Pak
TM
and has the same temperature profile and recommendations as the
commonly used D2Pak.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 185, pkg limited to 95A*
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130, pkg limited to 95A* A
I
DM
PD @TC = 25°C Power Dissipation 300 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 740
Linear Derating Factor 2.0 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 1160 m J
Avalanche Current 100 A
Repetitive Avalanche Energy 30 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 260 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.50 W
Junction-to-Ambient ––– 40
°C
* Current capability in normal application, see Fig.9.
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IRLBL1304
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.0045 VGS = 10V, ID = 110A
––– ––– 0.0065 VGS = 4.5V, ID = 93
Ω
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 120 ––– ––– S VDS = 25V, ID = 110A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 40V, VGS = 0V
µA
nA
VGS = -16V
Total Gate Charge ––– ––– 140 ID = 110A
Gate-to-Source Charge ––– ––– 39 nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– ––– 79 VGS = 4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 21 ––– VDD = 20V
Rise Time ––– 350 ––– ID = 110A
Turn-Off Delay Time ––– 45 ––– RG = 0.9Ω
Fall Time ––– 103 ––– RD = 0.18Ω,See Fig. 10
Internal Drain Inductance 2.0
––– –––
Internal Source Inductance ––– 5.0 –––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 7660 ––– VGS = 0V
Output Capacitance ––– 2150 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 460 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
185
740
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1 . 3 V TJ = 25°C, IS = 110A, VGS = 0V
Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 110A
Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
≤ 110A, di/dt ≤ 170A/µs, V
SD
= 25°C, L = 230µH
J
= 100A. (See Figure 12)
AS
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4.
,
Uses IRLBA1304/P data and test conditions.
TJ ≤ 175°C
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D
S
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IRLBL1304
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
1000
100
VGS
TOP
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM
2.5V
2.5V
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
20µs PULSE WIDTH
T = 25 C
J
T = 175 C
J
°
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
2.0
I =
D
170A
1.5
10
1.0
(Normalized)
1
D
I , Drain-to-Source Current (A)
V = 25V
DS
0.1
2.0 4.0 6.0 8.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRLBL1304
12000
10000
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C
iss
C
oss
C
rss
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I =
110A
D
V = 32V
DS
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
V = 20V
DS
V = 8V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
°
T = 175 C
J
100
°
T = 25 C
J
SD
I , Reverse Drain Current (A)
V = 0 V
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
1000
100
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
10
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10us
100us
1ms
10ms
Forward Voltage
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200
160
LIMITED BY PACKAGE
IRLBL1304
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
120
80
D
I , Drain Current (A)
40
Fig 10a. Switching Time Test Circuit
V
DS
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
90%
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
Fig 9. Maximum Drain Current Vs.
°
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
thJC
0.01
Thermal Response (Z )
0.001
0.20
0.1
0.10
0.05
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLBL1304
A
15V
DRIVER
+
-
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
3000
TOP
2500
2000
1500
1000
500
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
41A
71A
100A
°
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
Fig 13b. Gate Charge Test Circuit
DS
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IRLBL1304
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRLBL1304
Super-D2PakTM Package Outline
Dimensions are shown in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice. 2/00
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