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IRLB 8721PBF
Datasheet
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Datasheet IRLB 8721PBF Datasheet

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Page 1
www.irf.com 1
4/22/09
IRLB8721PbF
HEXFET® Power MOSFET
Notes through  are on page 9
GDS
PD - 97390
TO-220AB
IRLB8721PbF
S
D
G
D
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use
V
DSS
R
DS(on)
max
Qg (typ.)
30V
8.7m
:
@VGS = 10V
7.6nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ TC = 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ TC = 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
g
PD @TC = 100°C
Maximum Power Dissipation
g
Linear Derating Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
g
––– 2.3
R
θCS
Case-to-Sink, Flat Greased Surface
0.5 –––
R
θJA
Junction-to-Ambient
f
––– 62
V
°C
°C/W
W
A
0.43
33
10lb
x
in (1.1Nxm)
-55 to + 175
300 (1.6mm from case)
65
Max.
62
250
± 20
30
44
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
DSS
/ΔTJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 6.5 8.7
m
Ω
––– 13.1 16
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
ΔV
GS(th)
/ΔTJGate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 35 ––– ––– S
Q
g
Total Gate Charge ––– 7.6 13
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 1.9 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC
Q
gd
Gate-to-Drain Charge ––– 3.4 –––
Q
godr
Gate Charge Overdrive ––– 2.0 ––– See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Qgd) ––– 4.6 –––
Q
oss
Output Charge ––– 7.9 ––– nC
R
G
Gate Resistance ––– 2.3 3.8
Ω
t
d(on)
Turn-On Delay Time ––– 9.1 –––
t
r
Rise Time ––– 93 –––
t
d(off)
Turn-Off Delay Time ––– 9.0 ––– ns
t
f
Fall Time ––– 17 –––
C
iss
Input Capacitance ––– 1077 –––
C
oss
Output Capacitance ––– 360 ––– pF
C
rss
Reverse Transfer Capacitance ––– 110 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 62
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 250
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 14 21 nC
Typ.
–––
–––
I
D
= 25A
V
GS
= 0V
V
DS
= 15V
R
G
= 1.8
Ω
Max.
98
25
T
J
= 25°C, IF = 25A, VDD = 15V
di/dt = 200A/μs
e
TJ = 25°C, IS = 25A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 15V, ID = 25A
V
DS
= 15V, VGS = 0V
V
DD
= 15V, VGS = 4.5V
e
ID = 25A
V
DS
= 15V
Conditions
See Fig. 14
V
GS
= 4.5V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, ID = 31A
e
ƒ = 1.0MHz
V
GS
= 4.5V, ID = 25A
e
VGS = 20V
V
GS
= -20V
V
DS
= VGS, ID = 25μA
V
DS
= 24V, VGS = 0V
V
DS
= 24V, VGS = 0V, TJ = 125°C
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Page 3
IRLB8721PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60μs PULSE WIDTH Tj = 25°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60μs PULSE WIDTH Tj = 175°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.0 2.0 4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 15V
≤ 60μs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 25A
V
GS
= 10V
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Page 4
IRLB8721PbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ Cgd, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 4 8 1216202428
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
VDS= 15V
ID= 25A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
V
GS
= 0V
0.1 1 10 100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TC= 25°C
TJ= 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA LIMITED BY RDS(on)
100μsec
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Page 5
IRLB8721PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
0
20
40
60
80
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 1.0mA
ID = 250μA
ID = 25μA
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE ( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τι
(sec)
0.003454 13.68748
0.17246 7.21E-05
0.786312 0.001227
1.368218 0.007178
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
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Page 6
IRLB8721PbF
6 www.irf.com
Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 13a. Maximum Avalanche Energy
vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
V
DS
90%
10% V
GS
t
d(on)tr
t
d(off)tf
Fig 14b. Switching Time Waveforms
Fig 12. On-Resistance vs. Gate Voltage
V
DS
Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 14a. Switching Time Test Circuit
2 4 6 8 10
V
GS,
Gate -to -Source Voltage (V)
4
8
12
16
20
24
28
32
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
ID = 31A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
5.4A
10A
BOTTOM
25A
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Page 7
IRLB8721PbF
www.irf.com 7
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16a. Gate Charge Test Circuit
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied Voltage
Reverse Recovery Current
Body Diode Forward
Current
VGS=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. ISDWaveform
D.U.T. VDSWaveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 16b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
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Page 8
IRLB8721PbF
8 www.irf.com
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/
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Page 9
IRLB8721PbF
www.irf.com 9
Repetitive rating; pulse width limited by
max. junction temperature.
 Starting T
J
= 25°C, L = 0.32mH, RG = 25Ω,
I
AS
= 25A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
TO-220AB Part Marking Information
INTERNATIONAL
PART NUMB ER
RECTIFIER
LOT CODE
AS S E MB L Y
LOGO
YEAR 0 = 2000
DAT E CODE
WE E K 1 9 LINE C
LOT CODE 1789
EXAMPLE: T HIS IS AN IR F 1010
Note: "P" in assembly line position
i ndi cates "L ead - F ree"
IN THE ASS EMBLY LINE "C"
AS S E MB L E D ON WW 19, 2000
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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