Datasheet IRLB 3036 IR Datasheet

PD - 97357

)

IRLB3036PbF

Applications

l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits

Benefits

l Optimized for Logic Level Drive l Very Low R l Superior R*Q at 4.5V V l Improved Gate, Avalanche and Dynamic dV/dt

DS(ON)

at 4.5V V

GS

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free

HEXFET® Power MOSFET

D

V R

DSS

DS(on

typ.

max.

G

S

GDS

Gate Drain Source

I

D (Silicon Limited

I

D (Package Limited)

TO-220AB

IRLB3036PbF

60V

1.9mΩ

2.4m

270A

195A

Ω

c

Absolute Maximum Ratings

Symbol Parameter Units

ID @ TC = 25°C

@ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

I

D

@ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

I

D

I

DM

PD @TC = 25°C

V

GS

dv/dt T

J

T

STG

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

d

f

@ 10V (Silicon Limited)

GS

Max.

c

270

190

c

195

1100

380

2.5

±16

8.0

-55 to + 175

300

x

10lb

in (1.1Nxm)

Avalanche Characteristics

E

AS (Thermally limited)

I

AR

E

AR

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

d

g

e

290

See Fig. 14, 15, 22a, 22b

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θ

JC

R

θ

CS

R

θ

JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient (PCB Mount)

k

jk

–––

0.50 –––

––– 62

0.40

A

W

W/°C

V

V/ns

°C

mJ

A

mJ

°C/W

www.irf.com 1

12/08/08

IRLB3036PbF

s

/

g

)

s

g

s

di/dt = 100A/µs

g

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

R

G(int

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

fs Forward Transconductance 340 ––– ––– S

Q

g

Q

gs

Q

gd

Q

sync

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

eff. (ER)

oss

C

eff. (TR)

oss

Diode Characteristics

Symbol Parameter Min. Typ. Max. Unit

I

S

I

SM

V

SD

t

rr

Q

rr

I

RRM

t

on

Drain-to-Source Breakdown Voltage 60 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C

J

Static Drain-to-Source On-Resistance

––– 1.9 2.4

––– 2.2 2.8 Gate Threshold Voltage 1.0 ––– 2.5 V Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leaka

Internal Gate Resistance

e ––– ––– -100

–––

2.0 –––

Total Gate Charge ––– 91 140 Gate-to-Source Charge ––– 31 ––– Gate-to-Drain ("Miller") Charge ––– 51 ––– Total Gate Charge Sync. (Qg - Qgd)

––– 40 ––– Turn-On Delay Time ––– 66 ––– Rise Time ––– 220 ––– Turn-Off Delay Time ––– 110 ––– Fall Time ––– 110 ––– Input Capacitance ––– 11210 ––– Output Capacitance ––– 1020 ––– Reverse Transfer Capacitance ––– 500 –––

Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)

Continuous Source Current ––– –––

(Body Diode) Pulsed Source Current ––– –––

(Body Diode)

e

––– 1430 –––

i

––– 1880 –––

h

270

1100

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 62 –––

––– 66 ––– Reverse Recovery Charge ––– 310 –––

––– 360 ––– Reverse Recovery Current ––– 4.4 ––– A Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I VGS = 10V, ID = 165A

m

Ω

= 4.5V, ID = 140A

V

GS

V

= VGS, ID = 250µA

DS

V

= 60V, VGS = 0V

DS

µA

nA

Ω

= 60V, VGS = 0V, TJ = 125°C

V

DS

= 16V

V

GS

VGS = -16V

Conditions

VDS = 10V, ID = 165A

= 165A

I

D

V

= 30V

DS

nC

= 4.5V

V

GS

I

= 165A, VDS =0V, VGS = 4.5V

D

g

VDD = 39V I

= 165A

D

ns

= 2.1Ω

R

G

VGS = 4.5V

g

VGS = 0V

= 50V

V

DS

ƒ = 1.0MHz

pF

= 0V, VDS = 0V to 48V

V

GS

V

= 0V, VDS = 0V to 48V

GS

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode. T

= 25°C, IS = 165A, VGS = 0V

J

= 25°C VR = 51V,

T

J

ns

= 125°C IF = 165A

T

J

= 25°C

T

J

nC

= 125°C

T

J

= 25°C

T

J

= 5mA

D

g

d

i h

D

G

S

g

Notes:

 Calcuted continuous current based on maximum allowable junction

temperature Bond wire current limit is 195A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

RG = 25Ω, I above this value .

 I

SD

2 www.irf.com

, starting TJ = 25°C, L = 0.021mH

Jmax

= 165A, VGS =10V. Part not recommended for use

AS

≤ 165A, di/dt ≤ 430A/µs, V

DD

≤ V

(BR)DSS

, TJ ≤ 175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 C

eff. (TR) is a fixed capacitance that gives the same charging time as

oss

C

while V

oss

 C

eff. (ER) is a fixed capacitance that gives the same energy as

oss

C

while V

oss

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniquea refer to applocation note # AN- 994 echniques refer to application note #AN-994.

 R

is measured at TJ approximately 90°C.

θ

IRLB3036PbF

1000

TOP 15V

) A

(

100

t n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

2.7V

60µs PULSE WIDTH

≤

BOTTOM 2.7V

Tj = 25°C

0.1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

) A

( t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

TJ = 175°C

TJ = 25°C

V

= 25V

DS

≤

60µs PULSE WIDTH

0.1 1 2 3 4 5 6

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

VGS

10V

4.5V

4.0V

3.5V

3.3V

3.0V

1000

VGS

10V

4.5V

4.0V

3.5V

3.3V

3.0V

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

100

D

2.7V

TOP 15V

BOTTOM 2.7V

60µs PULSE WIDTH

≤

Tj = 175°C

10

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

) d e z

i

l a

m

r o

N

(

2.0

1.5

1.0

ID = 165A

V

= 10V

GS

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

100000

) F

10000

p

( e

c n a

t

i c a p a

C

1000

, C

100

V

= 0V, f = 1 MHZ

GS

C

= C

C

iss

rss

oss

= C

gs

gd

ds

C

iss

C

oss

C

rss

+ Cgd, C

+ C

SHORTED

ds

gd

1 10 100

VDS, Drain-to-Source Voltage (V)

5.0 ID= 165A

) V

(

4.0

e g a

t

l o V

3.0

e c

r u o S

o

t

2.0

e

t a

G ,

S

1.0

G

V

VDS= 48V

VDS= 30V

0.0

0 20 40 60 80 100 120

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com 3

IRLB3036PbF

1000

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

100

TJ = 175°C

10

1

0.1

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

TJ = 25°C

Fig 7. Typical Source-Drain Diode

Forward Voltage

300

250

) A

(

200

t n e

r

r u

C

150

n

i a

r D

100

,

D

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

V

= 0V

GS

Limited By Package

10000

OPERATION IN THIS AREA

) A

( t

1000

n e

r

r u

C e

c

r u

100

o S

o

t

n

i a

r D

10

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

1

0 1 10 100

LIMITED BY RDS(on)

100µsec

1msec

Limited by

package

10msec

DC

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

) V

(

75

e g a

t

l o V

n w

o d k a e

r B

e c

r u o S

o

t

n

i a

r D

,

S S D

) R B

(

V

Id = 5mA

70

65

60

55

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

3.0

2.5

2.0

) J µ

( y

1.5

g

r e n E

1.0

0.5

0.0

-10 0 10 20 30 40 50 60 70

V

Drain-to-Source Voltage (V)

Fig 11. Typical C

DS,

Stored Energy

OSS

1200

) J

m

( y

1000

g

r e n E

e

800

h c n a

l a v

600

A e

s

l u P

400

e

l g n

i S ,

200

S A

E

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

TOP 27A

BOTTOM 165A

I

D

50A

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

4 www.irf.com

IRLB3036PbF

τ

1

W

/ C

° )

C J h

t

Z (

e s n o p s e

0.01

R l a

m

r e h T

0.001

1000

0.1

D = 0.50

0.20

R

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

2

R

1

τ

2

3

R

2

3

τ

3

τ

2

3

Ri (°C/W) τi (sec)

4

R

4

0.01115 0.000009

τ

C

τ

0.08360 0.000080

4

τ

4

0.18950 0.001295

0.11519 0.006726

Notes: SINGLE PULSE ( THERMAL RESPONSE )

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche

) A

(

100

t n e

r

r u

C e

h c n a

l a v A

0.01

0.05

0.10

10

pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and

Tstart = 150°C.

1

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

300

TOP Single Pulse

250

) J

m

( y

g

200

r e n E

e h

150

c n a

l a v A

100

,

R A

E

50

BOTTOM 1.0% Duty Cycle ID = 165A

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T

2. Safe operation in Avalanche is allowed as long asT

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

. This is validated for every part type.

jmax

is not exceeded.

jmax

= Average power dissipation per single avalanche pulse.

during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed T

(assumed as

jmax

25°C in Figure 14, 15). t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see Figures 13)

thJC

P

D (ave)

·f

av

= 1/2 ( 1.3·BV·Iav) = DT/ Z

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

Fig 15. Maximum Avalanche Energy vs. Temperature

www.irf.com 5

IRLB3036PbF

3.0

) V

( e

2.5

g a

t

l o V

d

l

2.0

o h s e

r h

t e

t a

G ,

) h

t

( S G

V

ID = 250µA

ID = 1.0mA

1.5 ID = 1.0A

1.0

0.5

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 16. Threshold Voltage vs. Temperature

12

IF = 165A

VR = 51V

10

TJ = 25°C

TJ = 125°C

)

8

A

(

M R R

I

6

14

IF = 110A

VR = 51V

12

TJ = 25°C

TJ = 125°C

10

) A

(

8

M R R

I

6

4

2

0 100 200 300 400 500

diF /dt (A/µs)

Fig. 17 - Typical Recovery Current vs. dif/dt

900

IF = 110A

800

VR = 51V

TJ = 25°C

700

TJ = 125°C

600

) A

(

500

R R

Q

400

4

2

0 100 200 300 400 500

diF /dt (A/µs)

600

500

) A

(

400

R R

Q

300

200

0 100 200 300 400 500

300

200

100

0 100 200 300 400 500

diF /dt (A/µs)

Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt

IF = 165A

VR = 51V

TJ = 25°C

TJ = 125°C

diF /dt (A/µs)

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com

IRLB3036PbF

A

+

-

+

-





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Current

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

V

15V

V

DS

L

DRIVER

t

p

(BR)DSS

R

G

V

20V

GS

Fig 22a. Unclamped Inductive Test Circuit

V

GS

R

G

10V

V

GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

D.U.T

I

AS

Ω

0.01

t

p

+

V

DD

-

I

AS

Fig 22b. Unclamped Inductive Waveforms

R

V

DS

D

V

DS

90%

D.U.T.

V

DD

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Vds

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

Id

Vgs

Fig 24a. Gate Charge Test Circuit

www.irf.com 7

Fig 24b. Gate Charge Waveform

IRLB3036PbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

/27&2'( $66(0%/('21:: ,17+($66(0%/</,1(&

1RWH3LQDVVHPEO\OLQHSRVLWLRQ

LQGLFDWHV/HDG)UHH

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

,17(51$7,21$/

5(&7,),(5

/2*2

$66(0%/< /27&2'(

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

Visit us at www.irf.com for sales contact information. 12/2008

8 www.irf.com

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

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