Page 1
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
POWER MOSFET
IRF820
Advance Information
Ordering Information
Device Package Temp.
IRL820T TO-220
0 to 150°C
IRL820S TO-263 ( D2 )
0 to 150°C
Absolute Maximum Rating
Parameter Max Unit
ID@ TC =25°°°°C
Continuous Drain Current , V
GS
@10V 2.5
ID@ TC =100°°°°C
Continuous Drain Current , V
GS
@10V 1.6
IDM
Pulsed Drain Current (1) 8.0
A
PD @ TC =25°°°°C
Power Dissipation 50
W
Linear Derating Factor 0.40
Linear Derating Factor ( PCB Mount, D
2
) 0.025
W/°°°°C
V
GS
Gate-to- Source Voltage
±
20
V
E
AS
Single Pulse Avalanche Energy 210
mJ
I
AR
Avalanche Current (1) 2.5
A
E
AR
Repetitive Avalanche Energy (1) 5.0
mJ
dv/dt
Peak Diode Recovery dv/dt (3) 3.5
V/ns
TJ, T
STG
Junction & Storage Temperature Range
−
55 to +150
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
°°°°C
Thermal Resistance
Parameter
Min Typ Max Units
R
θθθθ
JC
Junction-to Case - - 2.5
R
θθθθ
CS
Case-to-Sink, Flat, Greased Surface (TO-220) - 0.50
R
θθθθ
JA
Junction-to Ambient ( PCB Mount, D2 ) - - 40
R
θθθθ
JA
Junction-to Ambient - - 62
°°°°C/W
Description
The Bay Linear MOSFET’s p r ovide the designers with the best
combination of fast switching, ruggedized device design, low
0n-resistance and low cost-effectiveness.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 Watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts.
Features
•
Dynamic dv/dt Rating
•
Repetitive Avalanche Rated
•
Fast Switching
•
Ease of Paralleling
•
Simple Drive Requirements
V
DSS
= 500V
R
DS (ON)
= 3.0 Ω
I
=2.5A
Bay Linear
Bay LinearBay Linear
Bay Linear
Linear Excellenc e
Page 2
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
IRF820
Electrical Characteristics (
TC = 25°°°°C unless otherwise specified)
Symbol Parameter Conditions Min Typ Max Units
V
(BR)DSS
Drain-to-source Breakdown
Voltage
V
GS
= 0V, ID = 250µA
500
V
V
(BR)DSS
/
∆∆∆∆T
J
Breakdown Voltage
Temperature Coefficient
Reference to 25°C,
I
D
= 250µA
- 0.59 -
V/°°°°C
I
D(ON)
On-State Drain Current
(note 2)
V
GS
> I
D(ON)
x R
DS(ON)
Max
2.5
A
R
DS(ON)
Static Drain-to-Source
On-Resistance
V
GS
=10V, ID = 1.5A
(note 4)
3.0
ΩΩΩΩ
V
GS(TH)
Gate Threshold Voltage
V
DS = VGS, ID =
250µA
2.0 - 4.0
V
g
fs
Forward Transconductance
V
DS =
50V, ID = 1.5A
1.5 - -
S
V
DS =
500V, V
GS =
0V 25
I
DSS
Drain-to-Source Leakage
Current
V
DS
= 400V, V
GS
= 0V,
T
C
= 125°C
- 250
µµµµA
Gate-to-Source Forward
Leakage
V
GS
= 20V 100
I
GSS
Gate-to-Source Reverse
Leakage
V
G
= -20V
- -
-100
nA
Q
g
Total Gate Charge - - 24
Q
qs
Gate-to-Source Charge - - 3.3
nC
Q
gd
Gate-to-Drain (“Miller”)
Charge
I
D
= 2.1A
V
DS
= 400V
V
GS
= 10V
(note 4)
13
nC
t
d ( on)
Turn-On Delay Time - 8.0 -
T
r
Rise Time - 8.6 -
t
d (off)
Turn -Off Delay Time - 33 -
T
f
Fall Time
V
DD
= 250V
I
D
= 2.1A
R
G
= 18
Ω
RD = 100Ω (note 4)
- 16 -
ns
LD
Internal Drain Inductance - 4.5 -
L
S
Internal Source Inductance
Between lead 6mm (0.25in.)
from package and center or die
contact
- 7.5 -
nH
C
iss
Input Capacitance - 360 -
C
oss
Output Capacitance - 92 -
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
F = 1.0MHZ
- 37 -
pF
Source-Drain Rating Characteristics
Symbol Parameter Conditions Min Typ Max Units
I
S
Continuous Source Current
(Body Diode)
- - 2.5
I
SM
Pulsed Source Current
(Body Diode) (Note 1)
MOSFET symbol showing the
integral reverse p-n j unction
diode.
- - 8.0
A
V
SD
Diode Forward Voltage (4)
T
J
=25°C, IS=2.5A,VGS=DV
- - 1.6
V
t
rr
Reverse Recovery Time - - 520
ns
Q
rr
Reverse Recovery Charge
T
J
=25°C, IF=2.1A
di/dt=100A/µs (Note 4)
- 0.70 1.4
µµµµC
t
on
Forward Turn-On Time Intrinsic turn -on time is negligible (turn-on is dominated by (LS+LD)
Notes: 1. Repeti tive Rating; pu lse width limited by max. junction temp erature.
2a. V
DD
= 50V, starting Tj = 25°C, L = 440µH RG = 25Ω, I
AS
= 28A
3. I
SD
≤ 2.5A, di/dt ≤ 50A/µs, VDD ≤ V
(BR)DSS
, T
j
≤ 150°C
4. Pulse with ≤ 300µs; duty cycle ≤ 2%
Page 3
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com
Advance Information
-
These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information
-
These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit exa mples are only to explain the rep resentative a pplications of the devices and ar e not intended to gu arantee any circuit
design or permit an y in dustrial property righ t to other rights to execute. Bay Linear ta kes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility application s without
the specific written consent of Bay Linear President.
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