Datasheet IRL640A Datasheet (Fairchild Semiconductor)

$GYDQF HG 3RZH U 026)(7

IRL640A

FEATURES

Logic-Level Gate Drive

♦

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

: 0.145Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

GS
AS

AR

D

STG

L

= 200V

DS

=25°C)

C

=100°C)

C

(1)

(2)
(1)
(1)
(3)

BV
R

DSS

DS(on)

= 200 V

ID = 18 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

200

18

11.4
63

20

±

64
18
11

5

110

0.88

- 55 to +150

300

= 0.18Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

JC

θ

R

θCS

R

θJA

©1999 Fairchild Semiconductor Corpor ation

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

1.14

--

62.5

°C/W

Rev. B

1

IRL640A

1&+$11(/

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Electrical Characteristics

CharacteristicSymbol

BV
∆BV/∆T
V

R

DSS

GS(th)

I

GSS

I

DSS

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

Q

gs

Q

gd

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge

g

Gate-Source Charge
Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

200

--

1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.17

--

--

--

--

--

--

13.3

1310

200

95
11

8
46
15
40

6.8

18.6

--

--

2.0

100

-100
10

100

0.18

--

1705

250
120

30
25

100

40
56

--

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA
V

=20V

GS

=-20V

V

GS

V

=200V

DS

V

=160V,TC=125°C

DS

=5V,ID=9A

V

GS

Ω

VDS=40V,ID=9A
V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=100V,ID=18A,

=4.6

R

G

VDS=160V,VGS=5V,

=18A

I

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4)

(4) (5)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Pu lse Width Limited by Maximum Junction Temperatu re
(2) L=0.3mH, I
(3) I
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%

(5) Essentially Independent of Operating Temper ature

Continuous Source Current

S

Pulsed- S o u rce Curren t
Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

=18A, VDD=50V, RG=27Ω, Starting TJ =25°C

AS

18A, di/dt ≤ 260A/µs, V

≤

SD

DD

≤

BV

DSS

--

(1)

--

(4)

--

--

--

, Starting TJ =25°C

--

--

--

224

1.55

18
63

1.5

--

--

µ

A
V

ns

C

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=18A,VGS=0V

J

T

=25°C,IF=18A

J

di

/dt=100A/µs

F

(4)

2

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Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : 7.0 V
6 .0 V
5 .5 V
5 .0 V
4 .5 V

1

4 .0 V

10

3 .5 V
Bottom : 3 .0 V

, Drain C urrent [A]

D

I

0

10

-1

10

VDS , Drain-S ource Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

IRL640A

1

10

150 oC

0

10

25 oC

, Drain C urrent [A]

D

I

-1

1

10

10

0246810

- 55 oC

VGS , Gate-So urce Voltage [V]

@ Notes :

1. V

GS

2. V

DS

3. 250

= 0 V
= 40 V

s Pulse Test

µ

0.4

]

Ω

, [

DS(on)

R

0.3

0.2

0.1

VGS = 5 V

VGS = 10 V

Drain-Source On-Resistance

@ Note : TJ = 25 oC

0.0
0 20406080

2000

C

1600

ID , Drain Current [A]

iss

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1200

C

oss

800

Capacitance [pF]

C

rss

400

0

0

10

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

1

VDS , Drain-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Curr ent

1

10

0

10

, Reverse Drain Current [A]

150 oC

DR

I

10

25 oC

-1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

@ Notes :

1. V

GS

2. 250

= 0 V

s Pulse Test

µ

VSD , Source- Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Sour ce Voltage

6

4

2

, Gate-So urce Voltage [V]

GS

V

0

0 10203040

VDS = 40 V

VDS = 100 V

VDS = 160 V

@ Notes : ID = 18 A

QG , Total G ate Charge [nC]

3

IRL640A

Fig 7. Breakdown Voltage vs. Temperat ure Fig 8. On-Resistance vs. Temperature

1.2

2.0

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1.1

1.0

, (Normal ized)

DSS

BV

0.9

@ Notes :

1. V

Drain-Sour ce Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

2. I

TJ , Junctio n Temperature [oC]

Operation in This Area

, Drain C urrent [A]
I

D

2

10

1

10

0

10

-1

10

10

@ Notes :

1. T

C

2. T

J

3. Single Pulse

0

is Limited by R

= 25 oC
= 150 oC

VDS , Drain-S ource Voltage [V]

DS(on)

1 ms

10 ms

DC

1

10

100 µs

2

10

= 0 V

GS

= 250 µA

D

1.5

1.0

, (Normalized)

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 255075100 125 150 175

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

20

15

10

, Drain Current [A]

D

5

I

0

255075100 125 150

Tc , Case Temperature [oC]

GS

= 9 A

D

= 5 V

10

10

(t) , Ther mal Resp onse

JC

θ

Z

10

Fig 11. Thermal Response

0

D=0.5

@ Notes :

0.2

0.1

-1

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

0.05

0.02

0.01
single pulse

-2

-5

10

-4

10

t1 , Square W ave Puls e Du ration [sec]

-3

10

-2

10

(t)=1.14 oC/W Max.

JC

θ

P

DM

t

1

t

2

-1

10

2

(t)

JC

θ

0

10

1

10

4

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IRL640A

Fig 12. Gate Charge Test Circuit & Waveform

5V

12V

Current Regulator

200nF

3mA

R

G

50k

Ω

300nF

V

GS

R

1

Current Sampli ng (IG)

Resistor

V

out

V

in

V

Same Type

as DUT

V

GS

Q

5V

DS

Q

gs

DUT

R

2

Current Sampli ng (ID)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

R

L

V

out

90%

10%

V

in

t

d(on)tr

t

on

DUT

V

DD

( 0.5 rated V

)

DS

g

Q

gd

Charge

t

d(off)

t

f

t

off

Vary tp to obtain
required peak I

5V

Fig 14. Un clamped Inductive Switching Test Circuit & Waveforms

BV

L

DUT

L

BV

I

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

=LL I

AS

1

---­2

2

AS

(t)

I

D

t

p

DSS

-------------------­BV

-- V

DSS

DD

Time

V

(t)

DS

5

IRL640A

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Fig 15. Peak D iode Recovery dv/dt Test Circuit & Waveforms

V

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

GS

Driver

R

G

D =

Same Type

as DUT

dv/dt controlled by R
IS control led by Duty Factor D

Gate Pulse Width

-------------------------­Gate Pulse Period

L

V

DD

G

5V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Cu rrent

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD

6

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

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CoolFET™
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TM

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®

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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.