Datasheet IRL630 Datasheet (International Rectifier)

HEXFET® Power MOSFET

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Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
150°C Operating Temperature
Fast Switching
Ease of paralleling

Description

Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on­resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

Specified at V

DS(ON)

= 4V & 5V

GS

PD -9.1255

IRL630

V

= 200V

DSS

R
ID = 9.0A

DS(on)

= 0.40 Ω

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 9.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 5.7 A
I

DM

PD @TC = 25°C Power Dissipation 74 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T

J

T

STG

Pulsed Drain Current 36

Linear Derating Factor 0.59 W/°C
Gate-to-Source Voltage ±10 V
Single Pulse Avalanche Energy 250 mJ
Avalanche Current 9.0 A
Repetitive Avalanche Energy 7.4 mJ

Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case –––– –––– 1.7
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
Junction-to-Ambient –––– –––– 62

Revision 0

IRL630

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.27 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.40 VGS = 5.0V, ID = 5.4A
––– ––– 0.50 VGS = 4.0V, ID = 4.5A

Ω

Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.8 ––– ––– S VDS = 50V, ID = 5.4A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V

––– ––– 25 VDS = 200V , VGS = 0V
––– ––– 250 VDS = 160V , VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– ––– 40 ID = 9.0A
Gate-to-Source Charge ––– ––– 5.5 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– ––– 24 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.0 ––– VDD = 100V
Rise Time ––– 57 ––– ID = 9.0A

ns

Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω
Fall Time ––– 33 ––– RD = 11Ω, See Fig. 10

Internal Drain Inductance ––– 4.5 –––

Internal Source Inductance ––– 7.5 –––

Between lead,
6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1100 ––– VGS = 0V
Output Capacitance ––– 220 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V

= 25V, starting TJ = 25°C, L = 4.6mH

DD

RG = 25Ω, I

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

––– ––– 9.0

A

––– ––– 36

Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 9.0A, VGS = 0V
Reverse Recovery Time ––– 230 350 ns TJ = 25°C, IF = 9.0A
Reverse Recovery Charge ––– 1.7 2.6 µC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

≤ 9.0A, di/dt ≤ 120A/µs, V

SD

DD

≤ V

(BR)DSS

,

TJ ≤ 150°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 9.0A. (See Figure 12)

AS

100

A

A

A

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VGS
TOP 7 .50V

5.00V

4.00V

3.50V

3.00V

2.75V

2.50V
BOTTOM 2.25 V

10

1

IRL630

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

2.25V

20µs PULSE WIDTH
T = 25°C

c

Fig 1. Typical Output Characteristics,

TC = 25oC

100

10

T = 150° C

J

1

T = 25 °C

J

0.1

D

I , Drain-to-Source Current (A)

0.01

2.0 2.5 3.0 3.5 4.0 4.5 5.0

V , Gate-to-Source Voltage (V)

GS

V = 50V

DS

20µs PULSE WIDTH

D

I , Drain-to-Source Current (A)

Fig 2. Typical Output Characteristics,

TC = 150oC

2.5

I = 9.0A

D

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

V = 5.0V

GS

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

IRL630

A

A

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2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V = 0V, f = 1MHz

GS

C = C + C , C SHORTED

iss gs gd ds

C = C

rss gd

C = C + C

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

10

I = 9.0A

D

V = 160V

DS

8

6

4

2

GS

V , Gate-to-Source Voltage (V)

A

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

V = 100V

DS

V = 40V

DS

FOR TEST CIRCUIT
SEE FIGURE 13

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

10µs

10

1

SD

I , Reverse Drain Current (A)

0.1
0 0.4 0.8 1.2 1.6

Fig 7. Typical Source-Drain Diode

T = 150°C

J

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

SD

Forward Voltage

10

1

D

I , Drain Current (A)

T = 25°C

C

T = 150°C

J

Single Pulse

0.1
1 10 10 0 1000

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100µs

1ms

10ms

100ms

10

A

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8

6

4

D

I , Drain Current (Amps)

2

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

IRL630

R

V

DS

V

GS

R

G

5.0 V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

D

D.U.T.

V

DD

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Case Temperature

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

Thermal Response (Z )

0.01

0.01
SINGLE PULSE

(THERMAL RESPONSE)

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rectangu lar Puls e Duration (sec)

1

Notes :

1. Duty fa ctor D = t / t

2. Peak T = P x Z + T

D M

J

P

DM

t

1

t

2

2

1

thJC

C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

A

A

IRL630

A

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5.0V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

600

500

400

300

200

100

AS

V = 50V

E , Single Pulse Avalanche Energy (mJ)

DD

0

25 50 75 100 125 150

Starting T , Juntion Temperature (°C)

J

I
TOP 9.0A

5.7A
BOTTOM 4.0A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

5.0V

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

IRL630

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Peak Diode Recovery dv/dt Test Circuit

D.U.T

R

G

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

V

DD

*

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRL630

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Package Outline

TO-220AB Outline

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

3 X

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-220AB.

LEAD ASSIGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
4 - DRAIN

0.93 (.037)

3 X

1.40 (.055)

3 X

1.15 (.045)

2.54 (.100)
2X

0.69 (.027)

0.36 (.014) M B A M

CONFORMS TO JEDEC OUTLINE TO-220AB

Part Marking Information

TO-220AB

EXAMPLE: T HIS IS AN IRF1010 WITH

ASSEMBLY LOT CODE 9B1M

Dimensions in Millimeters and (Inches)

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLY
LOT CODE

0.55 (.022)

3 X

0.46 (.018)

2.92 (.115)

2.64 (.104)

IRF1010

9B 1M

PART NUMBER

9246

DATE CODE

(YYWW)

YY = YEAR
WW = WEEK

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: [phone] IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: [phone] IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: [phone] IR

SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: [phone]

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: [phone]

Data and specifications subject to change without notice.