Datasheet IRL610A Datasheet (Fairchild Semiconductor)

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IRL610A

FEATURES

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10µA (Max.) @ V

♦

Lower R

♦

:1.185Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Volta ge
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Juncti on and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8

from case for 5-seconds

T

V

DSS

I

D

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

GS
AS

AR

D

STG

L

= 200V

DS

=25°C)

C

=100°C)

C

(1)

(2)
(1)
(1)
(3)

BV
R

DSS

DS(on)

= 200 V

ID = 3.3 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

200

3.3

2.1
12

20

±

29

3.3

3.3

5.0
33

0.26

- 55 to +150

300

= 0.046Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/°C

°C

Thermal Resistance

R

JC

θ

R

θCS

R

θJA

©1999 Fairchild Semiconductor Corpor ation

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

3.81

--

62.5

°C/W

Rev. B

1

IRL610A

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Electrical Characteristics

CharacteristicSymbol

BV

∆

V

DSS

BV/∆T

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forwar d
Gate-Source Leakage , Revers e

Drain-to-Sou rce Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (

Miller ) Charge

(TC=25°C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

200

--

1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

0.19

--

--

--

--

--

--

1.9

185

35
14

9
9

20

6

6.1

1.4

2.8

--

--

2.0

100

-100
10

100

1.5

--

240

45
20
30
30
50
20

9

--

--

V

V/°C

V

nA

A

µ

Ω

pF

ns

nC

=0V,ID=250µA

GS

I

=250µA

D

VDS=5V,ID=250µA

=20V

V

GS

=-20V

V

GS

V

=200V

DS

V

=160V,TC=125°C

DS

=5V,ID=1.65A

V

GS

Ω

VDS=40V,ID=1.65A
V

=0V,VDS=25V,f =1MHz

GS

See Fig 5

VDD=100V,ID=3.3A,

=22

R

G

VDS=160V,VGS=5V,
I

=3.3A

D

See Fig 6 & Fig 12

See Fig 7

Ω

See Fig 13

(4)

(4)

(4) (5)

(4) (5)

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes;

(1) Repetitive Rating: Puls e Width Limited by Maximum Junction Te mperature
(2) L=4mH, IAS=3.3A, VDD=50V, RG=27Ω, Starting TJ =25 °C
(3) I
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed- S o u rce Current
Diode Forward Voltage

SD

Reverse Recove ry T ime

rr

Reverse Recovery Ch arge

rr

3.3A, di/dt ≤ 140A/µs, V

≤

SD

DD

, Starting TJ =25 °C

BV

≤

DSS

--

(1)

--

(4)

--

--

--

--

--

--

123

0.38

3.3
12

1.5

--

--

µ

A
V

ns

C

Integral reverse pn-diode
in the MOSFET
T

=25°C,IS=3.3A,VGS=0V

J

T

=25°C,IF=3.3A

J

di

/dt=100A/µs

F

(4)

2

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IRL610A

1

10

V
Top : 7 .0 V

6 .0 V
5 .5 V
5 .0 V
4 .5 V
4 .0 V

0

10

3 .5 V
Bo ttom : 3 . 0 V

, Drain Current [A]

D

-1

I

10

-1

10

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

GS

@ Note s :

1. 2 50 µs Puls e Test

2. TC = 25 oC

0

10

VDS , Drain-Source Voltage [V]

1

10

4

]

Ω

, [

DS(on)

R

3

2

VGS = 5 V

1

Drain-Source On-Resistance

0

VGS = 10 V

0246810

ID , Drain Current [A]

@ Note : TJ = 25 oC

1

10

0

150 oC

10

25 oC

, Drain Current [A]

D

I

-1

10

0246810

- 55 oC

@ Note s :

1. V

2. V

3. 2 50

= 0 V

GS

= 40 V

DS

s Puls e Test

µ

VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistan ce vs. Drain Current

1

10

0

10

150 oC

, Reverse Drain Current [A]

DR

I

-1

10

0.40.60.81.01.21.4

25 oC

@ Notes :

1. V

GS

2. 250

= 0 V

s Pulse Test

µ

VSD , Source-Drain Voltage [V]

300

240

C

iss

180

120

C

oss

Capacitance [pF]

C

60

rss

0

0

10

VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

6

VDS = 40 V

VDS =100 V

4

VDS = 160 V

2

, Gate-Source Voltage [V]

GS

V

0

0246

QG , Total Gate Charge [nC]

@ Notes : ID = 3.3 A

3

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Vo ltage

IRL610A

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Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistan ce vs. Temperature

1.2

1.1

1.0

, (Norm alized)

DSS

BV

0.9

@ Notes :

1. V

Drain-So urce Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

2. I

TJ , Junct ion Temperature [oC]

Operation i n This Area

1

10

0

10

-1

10

, Drain Current [A]

D

I

-2

10

is Limited by R

@ Notes :

= 25 oC

1. T

C

= 150 oC

2. T

J

3. Single Pulse

DS(on)

10 ms

DC

1 ms

= 0 V

GS

= 250 µA

D

100 µs

2.5

2.0

1.5

, (Norm alized)

1.0

DS(on)

R

0.5

Drain-So urce On-Resista nce

0.0

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. V

2. I

TJ , Junct ion Temperature [oC]

Fig 10. Max. Drain Current vs. Ambient TemperatureFig 9. Max. Safe Operating Area

1.0

0.8

0.6

0.4

, Drain Current [A]

D

I

0.2

= 5 V

GS

= 1.65 A

D

-3

10

-1

10

0

10

1

10

2

10

VDS , Drain -Source Voltage [V]

2

10

Fig 11. Thermal Response

0.0
25 50 75 100 125 150

TA , Ambie nt Temperature [oC]

D=0.5

0.2

1

10

(t) , Thermal Respon se
Z

0.1

0.05

0.02

0

10

0.01

JA

θ

-1

10

-5

10

single pulse

-4

10

-3

10

t1 , Square Wave Pulse Durati on [s ec]

-2

10

@ Notes :

1. Z

2. Duty Factor, D=t1/t

(t)=69.4 oC/W Max.

JA

θ

3. TJM-TA=PDM*Z

P

DM

t

1

t

2

-1

10

0

10

2

(t)

JA

θ

1

10

2

10

3

10

4

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IRL610A

Fig 12. Gate Charge Test Circuit & Waveform

5V

12V

Current Regulator

200nF

3mA

R

G

50k

Ω

300nF

V

GS

R

1

Current Sampli ng (IG)

Resistor

V

out

V

in

V

Same Type

GS

as DUT

5V

V

DS

Q

gs

DUT

R

2

Current Sampli ng (ID)

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

R

L

V

out

90%

10%

V

in

t

d(on)tr

t

on

DUT

V

DD

( 0.5 rated V

)

DS

Q

g

Q

gd

Charge

t

d(off)

t

f

t

off

Vary tp to obtain
required peak I

5V

Fig 14. Un clamped Inductive Switching T est Circuit & Waveforms

BV

L

I

DUT

L

BV

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

=LL I

AS

----

1
2

2

AS

(t)

I

D

t

p

DSS

-------------------­BV

-- V

DSS

DD

Time

V

(t)

DS

5

IRL610A

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Fig 15. Peak D iode Recovery dv/dt Test Circuit & Waveforms

V

V

GS

( Driver )

DUT

+

V

DS

--

I

S

V

GS

GS

Driver

R

G

D =

Same Type

as DUT

dv/dt controlled by R
IS control led by Duty Factor D

Gate Pulse Width

-------------------------­Gate Pulse Period

L

V

DD

G

5V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD

6

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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
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user.

2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.