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PD - 94271A
HEXFET
®
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number BV
IRL5NJ7413 30V 0.014Ω 22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
RDS(on) ID
DSS
IRL5NJ7413
30V, N-CHANNEL
SMD-0.5
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 22*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 22*
I
DM
PD @ TC = 25°C Max. Power Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 1.0
T
J
T
STG
* Current is limited by package
For footnotes refer to the last page
Pulsed Drain Current ➀ 88
Linear Derating Factor 0.60 W/°C
Gate-to-Source Voltage ±16 V
Single Pulse Avalanche Energy ➁ 190 mJ
Avalanche Current ➀ 22 A
Repetitive Avalanche Energy ➀ 7.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5 s)
Weight 1.0 g
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A
V/ns
o
C
7/6/01
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IRL5NJ7413
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
DSS
D
Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA
/∆TJTemperature Coefficient of Breakdown — 0.027 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.014 Ω VGS = 10V, ID = 22A
Resistance — — 0.020 VGS = 4.5V, ID = 22A
Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA
Forward Transconductance 30 — — S ( )VDS = 10V, IDS = 22A ➃
Zero Gate Voltage Drain Current — — 25 V
— — 250 VDS = 24V,
Gate-to-Source Leakage Forward — — 100 VGS = 16V
Gate-to-Source Leakage Reverse — — -100 VGS = -16V
Total Gate Charge — — 70 VGS =10V, ID = 22A
Gate-to-Source Charge — — 20 nC VDS = 24V
Gate-to-Drain (‘Miller’) Charge — — 23
Turn-On Delay Time — — 20 VDD = 15V, ID = 22A,
Rise Time — — 80 VGS =10V, RG = 6.2Ω
Turn-Off Delay Time — — 80
Fall Time — — 80
Total Inductance — 4.0 —
Ω
µA
nA
ns
nH
drain pad to center of source pad
= 30V ,VGS=0V
DS
VGS = 0V, TJ =125°C
Measured from the center of
➃
C
iss
C
oss
C
rss
Input Capacitance — 1640 — VGS = 0V, VDS = 25V
Output Capacitance — 660 — pF f = 1.0MHz
Reverse Transfer Capacitance — 80 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — 22*
S
I
Pulse Source Current (Body Diode) ➀ —— 88
SM
V
Diode Forward Voltage — — 1.0 V Tj = 25°C, IS = 22A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 120 nS Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 300 nC VDD ≤ 25V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
* Current is limited by package
A
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
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Junction-to-Case — — 1.67
°C/W
+ LD.
S
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IRL5NJ7413
100
10
1
2.7V
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
)
(Α
TJ = 150°C
VGS
TOP 15V
10V
7.0V
4.5V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
10
2.7V
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
1.5
22A
I =
D
VGS
TOP 15V
10V
7.0V
4.5V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
TJ = 25°C
, Drain-to-Source Current
D
I
1
2.5 3.0 3.5 4.0 4.5 5.0
V
= 15V
DS
15
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRL5NJ7413
3000
2500
2000
1500
1000
C, Capacitance (pF)
500
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C
iss
C
oss
rss
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
22A
D
V = 24V
DS
V = 15V
DS
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80
Q , Total Gate Charge (nC)
G
V = 6V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
13
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.4 0.8 1.2 1.6
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
100
10
, Drain-to-Source Current (A)
D
I
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10 100
V
, Drain-toSource Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRL5NJ7413
60
LIMITED BY PACKAGE
50
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1
1 2
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL5NJ7413
A
15V
DRIVER
+
-
R
V
G
V
20V
DS
GS
L
D.U.T
.
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )DS S
t
p
400
TOP
300
200
V
DD
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
I
D
10A
14A
22A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Q
G
10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Same Type as D.U.T.
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
-
D
Fig 13b. Gate Charge Test Circuit
V
DS
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Footnotes:
IRL5NJ7413
Repetitive Rating; Pulse width limited by
maximum junction temperature.
V
= 25 V, Star ting TJ = 25°C, L=0.8mH
DD
Peak IAS =22A, VGS = 10 V, RG= 25Ω
I
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — SMD-0.5
≤ 22A, di/dt ≤ 140 A/µs,
SD
VDD ≤ 30V, TJ ≤ 150°C
P AD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
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