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PD- 91888
IRL5602S
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l P-Channel
l Fast Switching
l Fully Avalanche Rated
G
D
V
= -20V
DSS
R
S
= 0.042W
DS(on)
ID = -24A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
2
The D
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
2
D Pak
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V -24
ID @ TC = 100°C Continuous Drain Current, VGS @ -4.5V -17 A
I
DM
PD @TC = 25°C Power Dissipation 75 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -0.81 V/ns
T
J
T
STG
Pulsed Drain Current -96
Linear Derating Factor 0.5 W/°C
Gate-to-Source Voltage ± 8.0 V
Single Pulse Avalanche Energy 290 mJ
Avalanche Current -12 A
Repetitive Avalanche Energy 7.5 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
qJC
R
qJA
Junction-to-Case ––– 2.0
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
°C/W
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IRL5602S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
/DT
Breakdown Voltage Temp. Coefficient ––– -0.013 ––– V/°C Reference to 25°C, ID = -1mA
J
––– ––– 0.042 VGS = -4.5V, ID = -12A
Static Drain-to-Source On-Resistance
––– ––– 0.062 W VGS = -2.7V, ID = -10A
––– ––– 0.075 VGS = -2.5V, ID = -10A
Gate Threshold Voltage -0.7 ––– -1.0 V VDS = VGS, ID = -250µA
Forward Transconductance 12 ––– ––– S VDS = -15V, ID = -12A
Drain-to-Source Leakage Current
––– ––– -25 VDS = -20V, VGS = 0V
––– ––– -250 VDS = -16V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 500
Gate-to-Source Reverse Leakage ––– ––– -500 VGS = 8.0V
µA
nA
VGS = -8.0V
Total Gate Charge – – – ––– 44 ID = -12A
Gate-to-Source Charge ––– ––– 8.7 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = -4.5V, See Fig. 6 and 13
Turn-On Delay Time ––– 9.7 ––– VDD = -10 V
Rise Time ––– 73 ––– ID = -12A
Turn-Off Delay Time ––– 53 ––– RG = 6.0W, VGS = 4.5V
ns
Fall Time ––– 84 ––– RD = 0.8W, See Fig. 10
Internal Source Inductance 7.5
––– –––
Between lead,
nH
and center of die contact
Input Capacitance ––– 1460 ––– VGS = 0V
Output Capacitance ––– 790 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 370 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-24
-96
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– -1.4 V TJ = 25°C, IS = -12A, VGS = 0V
Reverse Recovery Time ––– 58 88 ns TJ = 25°C, IF = -12A
Reverse RecoveryCharge ––– 54 81 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25W, I
= 25°C, L = 3.0mH
J
= -14A. (See Figure 12)
AS
I
£ -12A, di/dt £ 120A/µs, V
SD
DD
£ V
TJ £ 175°C
Pulse width £ 300µs; duty cycle £ 2%.
(BR)DSS
,
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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D
S
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IRL5602S
100
10
TOP
BOTTOM
VGS
-15V
-12V
-10V
-7.0V
-5.0V
-4.5V
-2.7V
-2.0V
-2.0V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
100
°
T = 25 C
J
J
°
T = 175 C
J
100
10
TOP
BOTTOM
VGS
-15V
-12V
-10V
-7.0V
-5.0V
-4.5V
-2.7V
-2.0V
-2.0V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 175 C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.5
3.0
2.5
I =
D
-24A
2.0
10
1.5
(Normalized)
1.0
D
-I , Drain-to-Source Current (A)
V = -15V
DS
1
2.0 3.0 4.0 5.0 6.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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IRL5602S
2800
2400
2000
1600
1200
C, Capacitance (pF)
800
400
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHOR TED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
15
I =
-12A
D
V =-16V
DS
V =-10V
DS
GS
12
9
6
3
-V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 10 20 30 40 50 60 70
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
10
°
T = 175 C
J
°
T = 25 C
1
SD
-I , Reverse Drain Current (A)
0.1
0.0 0.4 0.8 1.2 1.6
-V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
100us
1ms
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRL5602S
25
20
15
10
D
-I , Drain Current (A)
5
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
G
-4.5V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
V
GS
10%
90%
V
DS
V
GS
t
d(on)tr
R
V
DS
D
D.U.T.
-
+
V
DD
t
d(off)tf
thJC
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty fa c to r D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration ( s ec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL5602S
(BR)
A
L
D.U.T
I
AS
0.01
t
p
DRIVER
Ω
15V
V
DD
R
V
G
-20V
DS
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
1000
TOP
800
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
-5.9A
-10A
-14A
°
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
-4.5V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
12V
.2µF
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
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Page 7
IRL5602S
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
· dv/dt controlled by R
· ISD controlled by Duty Factor "D"
G
· D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
[ ]
I
[ ]
SD
Fig 14. For P-Channel HEXFETS
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IRL5602S
A
TO-263AB Package Details
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
10.54 (.415)
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION
TRL
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
Tape & Reel
13.50 (.532)
12.80 (.504)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
15.42 (.609)
15.22 (.601)
27.40 (1.079)
23.90 (.941)
4
26.40 (1.039)
24.40 (.961)
3
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
4
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking
(This is an IRF530S with assembly lot
code 9B1M )
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
F530S
9246
9B 1M
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 5/99
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