Datasheet irl3716 Datasheet

SMPS MOSFET

PD - 94403

IRL3716

IRL3716S

IRL3716L

Applications

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification for Telecom and Industrial Use

l High Frequency Buck Converters for

V

DSS

20V

HEXFET® Power MOSFET

R

DS(on)

max I

4.0mΩ

180A

Computer Processor Power

l Active Oring

Benefits

l Ultra-Low Gate Impedance l Very Low R l Fully Characterized Avalanche Voltage

and Current

DS(on)

at 4.5V V

GS

TO-220AB

IRL3716

D2Pak

IRL3716S

TO-262

IRL3716L

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130 A I

DM

PD @TC = 25°C Maximum Power Dissipation 210 W PD @TC = 100°C Maximum Power Dissipation  100 W

Linear Derating Factor 1.4 W/°C

TJ , T

STG

Drain-Source Voltage 20 V Gate-to-Source Voltage ± 20 V

Pulsed Drain Current 720

Junction and Storage Temperature Range -55 to + 175 °C

D



Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case ––– 0.72 Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W Junction-to-Ambient ––– 62 Junction-to-Ambient (PCB mount) ––– 40

Notes  through  are on page 11

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03/12/02

IRL3716/3716S/3716L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max.Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA

––– 3.0 4.0 V ––– 4.0 4.8 VGS = 4.5V, ID = 72A 

mΩ

= 10V, ID = 90A 

GS

Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA Drain-to-Source Leakage Current

––– ––– 20 ––– ––– 250 VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 16V, VGS = 0V

µA

nA

VGS = -16V

Forward Transconductance 100 ––– ––– SVDS = 10V, ID = 72A Total Gate Charge ––– 53 79 ID = 72A Gate-to-Source Charge ––– 17 26 nC VDS = 16V Gate-to-Drain ("Miller") Charge ––– 24 35 VGS = 4.5V Output Gate Charge ––– 50 75 VGS = 0V, VDS = 10V Turn-On Delay Time ––– 18 ––– VDD = 10V Rise Time ––– 140 ––– ID = 72A Turn-Off Delay Time ––– 38 ––– RG = 3.9Ω

ns

Fall Time ––– 36 ––– VGS = 4.5V  Input Capacitance ––– 5090 ––– VGS = 0V Output Capacitance ––– 3440 ––– VDS = 10V

pF

Reverse Transfer Capacitance ––– 560 ––– ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 640 mJ Avalanche Current ––– 72 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

Diode Forward Voltage

––– –––

180

720

showing the

A

p-n junction diode.

G

––– 0.93 1.3 V TJ = 25°C, IS = 72A, VGS = 0V  ––– 0.80 ––– TJ = 125°C, IS = 72A, VGS = 0V 

Reverse Recovery Time ––– 180 280 ns TJ = 25°C, IF = 72A, VR=20V Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs



Reverse Recovery Time ––– 190 280 ns TJ = 125°C, IF = 72A, VR=20V Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRL3716/3716S/3716L

(

)

10000

1000

100

10

, Drain-to-Source Current (A)

D

I

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V BOTTOM 2.5V

2.5V

20µs PULSE WIDTH Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000.00

)

(Α

TJ = 25°C

TJ = 175°C

10000

1000

100

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V BOTTOM 2.5V

2.5V

10

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

1.5

180A

I =



D

100.00

, Drain-to-Source Current

D

I

10.00

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V

= 15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature

J

Fig 4. Normalized On-Resistance

V =

°

C

10V

GS



Vs. Temperature

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IRL3716/3716S/3716L

)

100000

10000

1000

C, Capacitance(pF)

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

C

= C

rss

C

= C

oss

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

gs gd ds

Ciss

Coss

+ Cgd, C

+ C

gd

SHORTED

ds

16

I

72A

=



D

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 30 60 90 120 150

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

V = 16V

DS



Q , Total Gate Charge (nC

G

OPERATION IN THIS AREA LIMITED BY RDS(on)

100µsec

100

10

T = 175 C

J

°



°



T = 25 C

J

1000

100

1msec

1

SD

I , Reverse Drain Current (A)

10

, Drain-to-Source Current (A)

D

I

Tc = 25°C

10msec

Tj = 175°C

V = 0 V



0.1

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

Single Pulse

1

1 10 100

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

180

150

120

IRL3716/3716S/3716L

R

D.U.T.

D

+

V

DD

-

V



LIMITED BY PACKAGE

R

DS

V

GS

G

4.5V

90

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

60

D

I , Drain Current (A)

30

Fig 10a. Switching Time Test Circuit

V

DS

90%

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

10% V

GS

Fig 9. Maximum Drain Current Vs.

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

10

thJC

1

D = 0.50

0.20

0.1

0.10

Thermal Response (Z )

0.05

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)



t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJC C

P

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRL3716/3716S/3716L

A

15V

DRIVER

+

-

V

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(B R)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

DD

1650

TOP

1320

990

660

330

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)



BOTTOM

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

D 29A 51A 72A

Current Regulator

Same Type as D.U.T.

Q

G

4.5 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

3mA

Current Sampling Resistors

+

V

D.U.T.

I

G

DS

-

I

D

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IRL3716/3716S/3716L

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRL3716/3716S/3716L

)

(

)

A

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

10.54

10.29 (.405

1 2 3

4

6.47 (.2 5 5

6.10 (.2 4 0

1.15 (.045 MIN

4.06 (.160

3.55 (.140

3.78 (.149

3.54 (.139

- A -

4.69 (.1 8 5

4.20 (.1 6 5

- B -

1.32 (.052

1.22 (.048

LEAD ASSIGNMENTS 1 - G AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN

0.93 (.037

3X

1.40 (.0 5 5

3X

1.15 (.0 4 5

2.54 (.100

NOTES: 1 DIMEN S IONING & TO LE R A N C ING P ER AN S I Y14.5M, 1982. 3 O UTL INE C ONFO RMS TO JE D E C OU T LINE TO -220A B . 2 C O N TR OL L IN G DIM E NSION : IN C H 4 H E AT S INK & LE A D MEA SU R E M EN TS D O NOT INCLUDE BURRS.

2X

0.69 (.027

0.36 (.014) M B A M

0.55 (.022

3X

0.46 (.018

2.92 (.115

2.64 (.104

TO-220AB Part Marking Information

EXAM PLE : THIS IS AN IRF1010 W IT H A SS EMB L Y LOT CO D E 9 B 1 M

INTE RN AT ION AL RECTIFIER LOG O

ASSEMBLY LO T C ODE

IRF1010

9246

9B 1M

PART NUMBER

DATE CODE (YYWW) YY = YEAR W W = W E E K

8 www.irf.com

D2Pak Package Outline

A

IRL3716/3716S/3716L

10.54 (.415)

1.40 (.055) MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIM ENSIONS AFTER SOLDER DIP. 2 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

2

D

Pak Part Marking Information

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10 ) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OURCE

10.16 (.400) REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL RE CTIFIER LOGO

A S SEMBLY LO T CO D E

F530S

9246

9 B 1M

PART NUMB ER

DATE CODE (Y Y W W ) YY = YEAR WW = WEEK

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IRL3716/3716S/3716L

TO-262 Package Outline

TO-262 Par t Mar king Information

10 www.irf.com

D2Pak Tape & Reel Information

TRR

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

IRL3716/3716S/3716L

1.60 (.063)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

330.00 (14.173) MAX.

NOTES :

1. COM FORMS TO EIA-418.

2. CONTROLLING DIMENSION: M ILLIMETER.

3. DIMENSION MEASURED @ HUB.

Notes:

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 This is applied to D

= 25°C, L = 0.25mH

J

= 72A.

AS

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

13.50 (.532)

12.80 (.504)

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  This is only applied to TO-220AB package

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961) 3

For recommended footprint and soldering techniques refer to application note #AN-994.

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

60.00 (2.362) MIN.

30.40 (1.197) MAX.

4

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/02

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