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PD - 94194A
IRL3715
SMPS MOSFET
IRL3715S
IRL3715L
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 14mΩ 54A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
and Current
DS(on)
at 4.5V V
GS
TO-220AB
IRL3715
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 54
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 38 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 71 W
PD @TA = 25°C Maximum Power Dissipation 3.8 W
Linear Derating Factor 0.48 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 210
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
max I
D2Pak
IRL3715S
D
TO-262
IRL3715L
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 2.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
Notes through are on page 11
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6/5/01
Page 2
IRL3715/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 11 1 4 VGS = 10V, ID = 26A
––– 15 2 0 VGS = 4.5V, ID = 21A
mΩ
Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 26 ––– ––– S VDS = 10V, ID = 21A
Total Gate Charge ––– 11 17 ID = 21A
Gate-to-Source Charge ––– 3.8 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 4.4 –– – VGS = 4.5V
Output Gate Charge ––– 11 17 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 6. 4 – –– VDD = 10V
Rise Time ––– 73 ––– ID = 21A
Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω
ns
Fall Time ––– 5.1 ––– VGS = 4.5V
Input Capacitance ––– 1060 ––– VGS = 0V
Output Capacitance ––– 700 ––– VDS = 10V
Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 110 m J
Avalanche Current ––– 21 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
54
210
showing the
A
p-n junction diode.
G
––– 0.9 1.3 V TJ = 25°C, IS = 21A, VGS = 0V
––– 0.8 ––– TJ = 125°C, IS = 21A, VGS = 0V
Reverse Recovery Time ––– 37 56 ns TJ = 25°C, IF = 21A, VR=20V
Reverse Recovery Charge ––– 28 42 nC di/dt = 100A/µs
Reverse Recovery Time ––– 38 57 ns TJ = 125°C, IF = 21A, VR=20V
Reverse Recovery Charge ––– 30 45 nC di/dt = 100A/µs
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D
S
Page 3
IRL3715/S/L
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
1000
VGS
TOP
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
1000
100
10
D
I , Drain-to-Source Current (A)
°
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
52A
I =
D
2.0
°
T = 25 C
J
100
D
I , Drain-to-Source Current (A)
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRL3715/S/L
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
Ciss
+ Cgd, C
gd
Coss
100
C, Capacitance(pF)
10
1 10 100
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
°
T = 175 C
J
SHORTED
ds
14
I =
21A
D
12
10
8
6
4
GS
V , Gate-to-Source Voltage (V)
2
0
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V = 16V
DS
V = 10V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
13
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
100µsec
10
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
1
1 10 100
V
, Drain-toSource Voltage (V)
DS
1msec
10msec
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRL3715/S/L
R
D.U.T.
D
+
V
DD
-
60
LIMITED BY PACKAGE
50
R
40
30
V
DS
V
GS
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
thJC
D = 0.50
1
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL3715/S/L
A
15V
DRIVER
+
-
V
DD
R
20V
V
DS
G
V
GS
L
D.U.T
I
AS
0.01
t
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
240
TOP
200
160
120
80
40
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
8.5A
15A
21A
°
Current Regulator
Same Type as D.U.T.
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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IRL3715/S/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRL3715/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.60 0)
14.84 (.58 4)
14.09 (.5 55)
13.47 (.5 30)
1.40 (.05 5)
3X
1.15 (.04 5)
2.54 (.10 0)
NOTES:
1 DIMEN S IONING & TO LE RAN C ING P E R AN S I Y14.5M, 1982. 3 OUTL INE C ON F O R M S TO JE D E C OU T LINE TO -220A B .
2 C O N T R O L L IN G D IMEN S IO N : IN C H 4 H E AT S IN K & L E A D M E AS URE M E NT S D O N OT INCLUDE BURRS.
2X
10.29 (.405)
4
1 2 3
3X
0.36 ( .0 1 4 ) M B A M
6.47 (.255)
6.10 (.240)
1.15 (.04 5)
MIN
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.18 5)
4.20 (.16 5)
- B -
1.32 (.05 2)
1.22 (.04 8)
3X
2.92 (.115)
2.64 (.104)
LEAD ASSIGNMENTS
1 - G AT E
2 - D RA IN
3 - S OUR C E
4 - D RA IN
0.55 (.02 2)
0.46 (.01 8)
TO-220AB Part Marking Information
EXAMPLE:
THIS IS AN IRF1010
LOT CODE 1789
A SSEMBLED ON WW 19, 1997
I N THE ASSE MB LY L IN E "C"
INTERNA TIO NA L
REC TIFIER
LOGO
AS SEMB LY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
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D2Pak Package Outline
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON W W 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTE R NATIONAL
RECTIFI ER
LOGO
PART NUM BER
DA TE CODE
YEA R 0 = 20 00
WEEK 02
LINE L
IRL3715/S/L
2
D
Pak Part Marking Information
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IRL3715/S/L
EXAMPLE:
THIS IS AN IRL3103L
LOT COD E 1789
AS SEMB L Y
PART NUMBER
DAT E CODE
WEE K 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE A SSEM BLY LIN E "C"
LOGO
RECTIFIER
INTERNAT IONAL
TO-262 Package Outline
TO-262 Par t Mar king Information
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D2Pak Tape & Reel Information
TRR
FEED DIRECTION
TRL
FEED DIRECTION
1.85 (.0 73)
1.65 (.0 65)
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.60 (.063)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609)
15.22 (.601)
IRL3715/S/L
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
Notes:
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
This is applied to D
= 25°C, L = 0.51mH
J
= 21A,VGS=10V
AS
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
13.50 (.532)
12.80 (.504)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220A package
27.40 (1.079)
23.90 (.941)
4
26.40 (1.03 9)
24.40 (.961 )
3
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 30A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
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