Page 1
PD - 94175A
IRL3714
SMPS MOSFET
IRL3714S
IRL3714L
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
20V 20mΩ 36A
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
and Current
DS(on)
at 4.5V V
GS
TO-220AB
IRL3714
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 31 A
I
DM
PD @TC = 25°C Maximum Power Dissipation 47 W
PD @TC = 70°C Maximum Power Dissipation 33 W
Linear Derating Factor 0.31 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 140
Junction and Storage Temperature Range -55 to + 175 °C
R
DS(on)
D2Pak
IRL3714S
max I
TO-262
IRL3714L
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case ––– 3.2
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40
Notes through are on page 11
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06/19/01
Page 2
IRL3714/3714S/3714L
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max.Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 15 20 V
––– 21 28 VGS = 4.5V, ID = 14A
mΩ
= 10V, ID = 18A
GS
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
V
= 16V, VGS = 0V
DS
VGS = -16V
Forward Transconductance 17 ––– ––– SVDS = 10V, ID = 14A
Total Gate Charge ––– 6.5 9.7 ID = 14A
Gate-to-Source Charge ––– 1.8 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 2.9 ––– VGS = 4.5V
Output Gate Charge ––– 7.1 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 8.7 ––– VDD = 10V
Rise Time ––– 78 ––– ID = 14A
Turn-Off Delay Time ––– 10 ––– RG = 1.8Ω
ns
Fall Time ––– 4.5 ––– VGS = 4.5V
Input Capacitance ––– 670 ––– VGS = 0V
Output Capacitance ––– 470 ––– VDS = 10V
Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 72 mJ
Avalanche Current ––– 14 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
36
–––
–––
140
showing the
A
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
––– 0.88 ––– TJ = 125°C, IS = 18A, VGS = 0V
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 18A, VR=10V
Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs
Reverse Recovery Time ––– 35 53 ns TJ = 125°C, IF = 18A, VR=10V
Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs
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D
S
Page 3
IRL3714/3714S/3714L
10000
1000
100
10
1
, Drain-to-Source Current (A)
D
0.1
I
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
1000
100
10
VGS
TOP 15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
2.0V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
36A
I =
D
)
(Α
2.0
TJ = 25°C
100.00
TJ = 175°C
10.00
, Drain-to-Source Current
D
I
1.00
2.0 4.0 6.0 8.0 10.0
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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IRL3714/3714S/3714L
)
10000
1000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Ciss
Coss
100
C, Capacitance(pF)
10
1 10 100
Crss
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
SHORTED
ds
15
D
I =
14
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 4 8 12 16 20
Q , Total Gate Charge (nC
G
V = 16V
DS
V = 10V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100.00
TJ = 175°C
100
100µsec
10.00
10
1msec
, Reverse Drain Current (A)
1.00
SD
I
0.10
0.0 1.0 2.0 3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
TJ = 25°C
V
GS
= 0V
1
, Drain-to-Source Current (A)
D
Tc = 25°C
I
Tj = 175°C
Single Pulse
0.1
1 10 100
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10msec
Forward Voltage
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IRL3714/3714S/3714L
(
)
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature
C
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
D
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
1
0.20
0.10
0.05
0.02
0.01
0.1
Thermal Response (Z )
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
P
DM
t
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 6
IRL3714/3714S/3714L
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(B R)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
DD
150
TOP
120
90
60
30
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
D
5.9A
10A
14A
°
Current Regulator
Same Type as D.U.T.
Q
G
4.5 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
V
GS
Fig 13b. Gate Charge Test Circuit
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
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Page 7
IRL3714/3714S/3714L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P.W.
Period
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRL3714/3714S/3714L
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(
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A
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
.415
2.87 (.113
2.62 (.103
15.24 (.600
14.84 (.584
14.09 (.555
13.47 (.530
10.54
10.29 (.405
1 2 3
4
6.47 (.2 5 5
6.10 (.2 4 0
1.15 (.045
MIN
4.06 (.160
3.55 (.140
3.78 (.149
3.54 (.139
- A -
4.69 (.1 8 5
4.20 (.1 6 5
- B -
1.32 (.052
1.22 (.048
LEAD ASSIGNMENTS
1 - G AT E
2 - D RA IN
3 - S OU R C E
4 - D RA IN
0.93 (.037
3X
1.40 (.0 5 5
3X
1.15 (.0 4 5
2.54 (.100
NOTES:
1 DIMEN S IONING & TO LE R A N C ING P ER AN S I Y14.5M, 1982. 3 O UTL INE C ONFO RMS TO JE D E C OU T LINE TO -220A B .
2 C O N TR O L L IN G D IM E NS IO N : IN CH 4 HE AT S IN K & L E A D M E ASU R E M E N T S DO N OT INCLUDE BURRS.
2X
0.69 (.027
0.36 (.014) M B A M
0.55 (.022
3X
0.46 (.018
2.92 (.115
2.64 (.104
TO-220AB Part Marking Information
EXAM PLE : THIS IS AN IRF1010
W IT H A SS EMBL Y
LOT CODE 9 B1 M
INTE RN AT ION AL
RECTIFIER
LOG O
ASSEMBLY
LO T C ODE
IRF1010
9246
9B 1M
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
W W = W E E K
8 www.irf.com
Page 9
D2Pak Package Outline
A
IRL3714/3714S/3714L
10.54 (.415)
1.40 (.055)
MA X.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
2
D
Pak Part Marking Information
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.2 5 ( .0 10 ) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNMENTS
1 - G ATE
2 - D RA IN
3 - S OURCE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIER
LOGO
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1M
PART NUMB ER
DATE CODE
(Y Y W W )
YY = YEAR
WW = WEEK
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Page 10
IRL3714/3714S/3714L
TO-262 Package Outline
TO-262 Part Marking Information
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Page 11
D2Pak Tape & Reel Information
TRR
FEED DIRECTION
TRL
FEED DIRECTION
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
IRL3714/3714S/3714L
1.60 (.063)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609)
15.22 (.601)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
330.00
(14.173)
MAX.
NOTES :
1. COM FORMS TO EIA-418.
2. CONTROLLING DIMENSION: M ILLIMETER.
3. DIMENSION MEASURED @ HUB.
Notes:
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
This is applied to D
= 25°C, L = 0.69 mH
J
= 14A.
AS
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
13.50 (.532)
12.80 (.504)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
27.40 (1.079)
23.90 (.941)
4
26.40 (1.039)
24.40 (.961)
3
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
These products have been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
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