Datasheet irl3713 Datasheet

PD - 94184C

IRL3713

SMPS MOSFET

IRL3713S

IRL3713L

HEXFET® Power MOSFET

Applications

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

V

DSS

30V 3.0@VGS = 10V 260A

R

DS(on)

max (m

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance l Very Low R l Fully Characterized Avalanche Voltage

and Current

DS(on)

at 4.5V V

GS

TO-220AB

IRL3713

D2Pak

IRL3713S

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 260 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 180 A I

DM

PD @TC = 25°C Maximum Power Dissipation 330 W PD @TC = 100°C Maximum Power Dissipation 170 W

Linear Derating Factor 2.2 W/°C

TJ , T

STG

Drain-Source Voltage 30 V Gate-to-Source Voltage ± 20 V

Pulsed Drain Current 1040

Junction and Storage Temperature Range -55 to + 175 °C

Ω)Ω)

Ω) I

Ω)Ω)

TO-262

IRL3713L

D

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case ––– 0.45 Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W Junction-to-Ambient ––– 62 Junction-to-Ambient (PCB mount) ––– 40

Notes  through  are on page 11

www.irf.com 1

01/02/02

IRL3713/S/L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA

––– 2.6 3.0 VGS = 10V, ID = 38A  ––– 3.3 4.0 VGS = 4.5V, ID = 30A 

mΩ Gate Threshold Voltage 1 .0 ––– 2.5 V VDS = VGS, ID = 250µA Drain-to-Source Leakage Current

––– ––– 20 ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 24V, VGS = 0V

µA

= 20V

GS

nA

V

GS

= -20V

Forward Transconductance 76 ––– ––– SVDS = 15V, ID = 30A Total Gate Charge ––– 75 110 ID = 30A Gate-to-Source Charge ––– 24 ––– nC VDS = 15V Gate-to-Drain ("Miller") Charge ––– 37 ––– VGS = 4.5V Output Gate Charge ––– 61 92 VGS = 0V, VDS = 15V Turn-On Delay Time ––– 16 ––– VDD = 15V Rise Time ––– 160 ––– ID =30A Turn-Off Delay Time ––– 40 ––– RG = 1.8Ω

ns

Fall Time ––– 57 ––– VGS = 4.5V  Input Capacitance ––– 5890 ––– VGS = 0V Output Capacitance ––– 3130 ––– VDS = 15V Reverse Transfer Capacitance ––– 630 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 1530 mJ Avalanche Current ––– 46 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

Diode Forward Voltage

––– –––

260

1040

showing the

A

p-n junction diode.

G

––– 0.80 1.3 V TJ = 25°C, IS = 30A, VGS = 0V  ––– 0.68 ––– TJ = 125°C, IS = 30A, VGS = 0V 

Reverse Recovery Time ––– 75 110 ns TJ = 25°C, IF = 30A, VR=20V Reverse Recovery Charge ––– 140 210 nC di/dt = 100A/µs



Reverse Recovery Time ––– 78 120 ns TJ = 125°C, IF = 30A, VR=20V Reverse Recovery Charge ––– 160 240 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRL3713/S/L

1000

100

10

1

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

1000

VGS

TOP

10V

8.0V

6.0V

4.5V

4.0V

3.3V



2.8V

BOTTOM

2.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

1000

100

10

D

I , Drain-to-Source Current (A)

°

1

0.1 1 10 100

VGS

TOP

10V

8.0V

6.0V

4.5V

4.0V

3.3V



2.8V

BOTTOM

2.5V

20µs PULSE WIDTH



T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =



D

260A

°

T = 175 C



100

10

D

I , Drain-to-Source Current (A)

1

J

°

T = 25 C



J

V = 15V

DS



20µs PULSE WIDTH

2.5 3.0 3.5 4.0 4.5

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =



10V

GS

°

Vs. Temperature

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IRL3713/S/L

0

)

100000

10000

V

= 0V, f = 1 MHZ

GS

C

= C

iss

gs

C

= C

rss

gd

C

= C

oss

ds

+ Cgd, C

+ C

gd

Ciss Coss

1000

C, Capacitance(pF)

100

1 10 100

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

SHORTED

ds

14

I =

30A

D



12

10

8

6

4

GS

V , Gate-to-Source Voltage (V)

2

0

0 40 80 120 160

Q , Total Gate Charge (nC)

G

V = 24V

DS

V = 15V

DS



V = 6V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED



BY R

DS(on)

°

T = 175 C



100

10

1

SD

I , Reverse Drain Current (A)

0.1

J

°

T = 25 C



J

V = 0 V



GS

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V ,Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

1000

100

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

°

T T= 175 C

J



Single Pulse

10

1 10 10

V , Drain-to-Source Voltage (V

DS



10us



100us



1ms



10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

300

250

200

150



LIMITED BY PACKAGE

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

IRL3713/S/L

R

D

D.U.T.

+

V

DD

-

100

D

I , Drain Current (A)

50

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

1

D = 0.50

thJC

Thermal Response (Z )

0.001

0.20

0.1

0.10

0.05

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1

SINGLE PULSE



(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

P

DM

t



Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

1 2

J DM thJC C

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRL3713/S/L

A

15V

DRIVER

+

-

V

DD

R

20V

V

DS

G

V

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

3000

TOP

2500

2000

1500

1000

500

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J



BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

°

D 30A 38A 46A

Current Regulator

Same Type as D.U.T.

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

V

GS

Fig 13b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

3mA

Current Sampling Resistors

+

V

D.U.T.

I

G

DS

-

I

D

6 www.irf.com

IRL3713/S/L

Peak Diode Recovery dv/dt Test Circuit



D.U.T

+



-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-



-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFET® Power MOSFETs

www.irf.com 7

IRL3713/S/L

(

)

EXAMPLE:

THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19 , 1997 IN THE ASSEMBLY LINE "C"

INTERNATIONAL

RE CTIFIER

LOGO

ASSEMBLY LOT CODE

PART NUMBER

DA TE C ODE YEAR 7 = 1997 WEEK 19 LINE C

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

1.40 (.055

3X

1.15 (.045

2.54 (.100

NOTES: 1 D IME N SIONIN G & T OLE R A NC IN G P E R A N S I Y 1 4 .5 M , 19 82. 3 OU T L INE C O N F O RM S TO J ED E C O U TLIN E TO -220 A B . 2 C O N TR O L L ING DIM E N S ION : IN C H 4 H E AT S INK & L E A D M E ASU R E M E N T S D O N OT INCLUDE BURRS.

2X

10.29 (.405

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255

6.10 (.240

1.15 (.045 MIN

4.06 (.1 6 0

3.55 (.1 4 0

0.93 (.0 3 7

0.69 (.0 2 7

3.78 (.149

3.54 (.139

- A -

4.69 (.185

4.20 (.165

- B -

1.32

1.22 (.04 8

2.92 (.11 5

2.64 (.10 4

.05 2

LEAD ASSIGNMENTS 1 - G A T E 2 - D R AIN 3 - SOU R C E 4 - D R AIN

0.55 (.0 2 2

3X

0.46 (.0 1 8

TO-220AB Part Marking Information

8 www.irf.com

D2Pak Package Outline

F530S

THIS IS AN IRF530S WITH

LOT CODE 8024 ASSEMBLED ON WW 02 , 20 00 IN THE ASS EMBLY LINE "L"

ASSEMBLY LOT CODE

INTERNATIONAL

RECTIFIER

LOGO

PART NUMBER

DA TE C ODE YEA R 0 = 2000 WEEK 02 LINE L

IRL3713/S/L

2

D

Pak Part Marking Information

www.irf.com 9

IRL3713/S/L

EXAMPLE:

THIS IS AN IRL310 3 L LOT CODE 1789

ASSEMBLY

PART NUMBER

DATE CODE

WEEK 19 LINE C

LOT CODE

YEAR 7 = 1997

ASSEMBLED ON WW 19, 19 97 IN THE ASSEMBLY LINE "C"

LOGO

RECT IFIER

INTE RNAT IONAL

TO-262 Package Outline

TO-262 Par t Marking Information

10 www.irf.com

D2Pak Tape & Reel Information

TRR

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

IRL3713/S/L

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

330.00 (14.173) MAX.

NOTES :

1. COMFORM S TO EIA-418.

2. CONTROLLING DIMENSION: MILLIM ETER.

3. DIMENSION MEASURED @ HUB.

Notes:

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

 This is applied to D

= 25°C, L = 1.4mH

J

= 46A,VGS=10V

AS

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

13.50 (.532)

12.80 (.504)

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  This is only applied to TO-220A package

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961) 3

For recommended footprint and soldering techniques refer to application note #AN-994.



Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

60.00 (2.362) MIN.

30.40 (1.197) MAX.

4

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 01/02

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