Page 1
PD - 9.1370C
TO-220AB
IRL3705N
HEXFET® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
D
V
= 55V
DSS
DS(on)
= 0.01Ω
R
ID = 89A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 89
@ TC = 100°C Continuous Drain Current, VGS @ 10V 63 A
I
D
I
DM
PD @TC = 25°C Power Dissipation 170 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 310
Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ± 16 V
Single Pulse Avalanche Energy 340 mJ
Avalanche Current 46 A
Repetitive Avalanche Energy 17 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.90
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
8/25/97
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IRL3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
J
= 10V, ID = 46A
GS
= 5.0V, ID = 46A
GS
Static Drain-to-Source On-Resistance
––– ––– 0.010 V
––– ––– 0.012 Ω V
––– ––– 0.018 VGS = 4.0V, ID = 39A
Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
Forward Transconductance 50 ––– – –– S VDS = 25V, ID = 46A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– – –– -100 VGS = -16V
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
µA
nA
= 55V, VGS = 0V
V
DS
= 16V
V
GS
Total Gate Charge ––– ––– 98 ID = 46A
Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– –– – 49 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 28V
Rise Time ––– 140 –––
Turn-Off Delay Time ––– 37 ––– RG = 1.8Ω, VGS = 5.0V
ns
ID = 46A
Fall Time ––– 78 ––– RD = 0.59Ω, See Fig. 10
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –– –
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Input Capacitance ––– 3600 ––– VGS = 0V
Output Capacitance ––– 870 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V
Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 46A
Reverse RecoveryCharge ––– 290 440 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 320µH
= 46A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
89
A
310
≤ 46A, di/dt ≤ 250A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
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IRL3705N
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
100
10
D
I , Drain-to-Source Current (A)
2.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Dra in-to-So urc e V olta ge (V )
DS
J
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
100
10
D
I , Drain-to-Source Current (A )
2.5V
20µs PULSE WIDTH
T = 175°C
A
1
0.1 1 10 100
V , Dra in-to-So urc e V olta ge (V )
DS
J
A
Fig 2. Typical Output Characteristics
3.0
I = 77A
D
T = 25°C
J
T = 175°C
100
10
D
I , Dra in - to -Sou rce Current (A)
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , Ga te-to-Source Voltage (V)
GS
J
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(No rm a li zed)
1.0
0.5
DS(on)
R , Dr ain -to-S ou rc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tio n T em perat u re ( °C )
J
V = 1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRL3705N
6000
5000
4000
3000
2000
C, C apac itance (pF)
1000
0
1 10 100
V = 0 V , f = 1MHz
GS
C = C + C , C S HORTE D
iss gs gd ds
C = C
rss gd
C
C = C + C
iss
oss ds gd
C
oss
C
rs s
V , Dr ain-to-S ou rce V olta ge ( V )
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I = 46 A
V , G ate- to-S o urce V oltag e (V)
12
GS
D
9
6
3
V = 44 V
DS
V = 28 V
DS
FOR TEST CIRCUIT
A
0
0 20 40 60 80 100 120 140
Q , Total Ga te Ch arg e (nC)
G
SEE FIGURE 1 3
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O PERATION IN THIS ARE A LIMI TED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
SD
I , Rev ers e Dr ain C u rren t (A)
10
0.4 0.8 1.2 1.6 2.0 2.4 2.8
V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
10µs
100
100µs
10
D
I , Drain Cu rrent (A )
T = 25°C
C
T = 175°C
J
A
Single Pulse
1
1 10 100
V , Drain-to-So urc e Vo ltag e (V)
DS
1ms
10ms
A
Fig 8. Maximum Safe Operating Area
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IRL3705N
+
-
100
LIMITED BY PACKAGE
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
D
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
thJC
0.20
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
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IRL3705N
15V
V
DS
R
G
10V
t
L
D.U.T
I
AS
Ω
0.01
p
DRIVER
+
-
V
DD
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
800
600
400
A
200
AS
V = 25 V
E , S ingle Pu lse Ava lanche E nerg y (m J)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TOP 19 A
3 3 A
BOTTOM 46A
D
A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
5.0 V
Q
GS
V
G
Q
GD
Charge
Current Regulator
Same T ype as D.U.T.
12V
.2µF
V
GS
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
50KΩ
.3µF
D.U.T .
3mA
I
G
Current Sampling Resistors
I
+
V
DS
-
D
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IRL3705N
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
• dv/dt controlled by R
• Driver same type as D.U.T.
controlled by Duty Factor "D"
• I
SD
• D.U.T. - Device Under Test
Period
-
D =
G
P.W.
Period
+
V
DD
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Current
di/dt
Diode Recovery
dv/dt
V
DD
I
SD
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IRL3705N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.41 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & TO L E R A N C ING PE R A NS I Y 14 .5M , 198 2. 3 OU T L INE C O N F O R M S T O J E D E C OU T LINE TO -2 20 A B .
2 CO NTROLLING DIME NSION : INCH 4 HEATSIN K & LEAD MEASURE MENTS D O NOT INCLUDE BU RRS.
2X
1 0.29 (.40 5)
1 2 3
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
W ITH ASSEMBLY
LOT C O D E 9 B1 M
LOT C O D E 9 B1 M
3.78 (.149)
3.54 (.139)
6.4 7 (.255)
6.1 0 (.240)
4
1.15 (.045)
MIN
4.0 6 (.160)
3.5 5 (.140)
0.93 (.037)
3X
0.69 (.027)
0 .3 6 (.01 4) M B A M
INTERNATIONAL
R ECT IFIER
LOG O
ASSEMBLY
ASSEMBLY
LOT C O D E
LOT C O D E
4.69 (.185)
- A -
4.20 (.165)
INTERNATIONAL
R ECT IFIER
LOG O
- B -
IRF1010
IRF1010
9246
9246
9B 1 M
9B 1 M
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GA TE
2 - DR AIN
3 - S OURCE
4 - DR AIN
0.5 5 (.022)
3X
0.4 6 (.018)
2.92 (.115)
2.64 (.104)
PART NUMBER
PART NUMBER
DATE CODE
DATE CODE
(YYWW)
(YYWW)
YY = YEAR
YY = YEAR
WW = WEEK
WW = WEEK
A
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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