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PD -9.1676A
PRELIMINARY
IRL3502S
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
2
Pak is a surface mount power package capable
The D
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
2
Pak is suitable for high current applications because
D
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 67 A
I
DM
PD @TC = 25°C Power Dissipation 140 W
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 420
Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ± 10 V
Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy 390 mJ
Avalanche Current 64 A
Repetitive Avalanche Energy 14 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
D
S
2
D Pak
V
DSS
R
DS(on)
= 0.007W
ID = 110A
= 20V
°C
Thermal Resistance
R
qJC
R
q JA
Junction-to-Case ––– 0.89
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
Parameter Typ. Max. Units
11/18/97
Page 2
IRL3502S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
DV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
/DT
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1.0mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.008 VGS = 4.5V, ID = 64A
––– ––– 0.007
W
VGS = 7.0V, ID = 64A
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 77 ––– ––– S VDS = 10V, ID = 64A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
VDS = 20V, VGS = 0V
µA
VGS = 10V
nA
Total Gate Charge ––– ––– 110 ID = 64A
Gate-to-Source Charge ––– ––– 27 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 3 9 VGS = 4.5V, See Fig. 6
Turn-On Delay Time ––– 10 ––– VDD = 10V
Rise Time ––– 140 –––
Turn-Off Delay Time ––– 96 ––– RG = 3.8W, VGS = 4.5V
ns
ID = 64A
Fall Time ––– 130 ––– RD = 0.15W,
Between lead,
Internal Source Inductance ––– 7.5 –––
nH
and center of die contact
Input Capacitance ––– 4700 ––– VGS = 0V
Output Capacitance ––– 1900 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25W, I
I
SD
TJ £ 150°C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
110
420
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V
Reverse Recovery Time ––– 87 130 n s TJ = 25°C, IF = 64A
Reverse Recovery Charge ––– 200 310 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width £ 300µs; duty cycle £ 2%.
= 25°C, L = 190µH
J
= 64A.
AS
£ 64A, di/dt £ 86A/µs, V
DD
£ V
(BR)DSS
Uses IRL3502 data and test conditions
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
,
package refer to Design Tip # 93-4
D
G
S
Page 3
`
IRL3502S
1000
100
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.25V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.25V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
110A
°
T = 25 C
J
°
T = 150 C
J
100
D
I , Drain-to-Source Current (A)
V = 15V
DS
10
2 3 4 5 6
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
4.5V
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IRL3502S
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
15
I =
64A
D
V = 16V
12
9
6
3
GS
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100
°
T = 25 C
J
SD
I , Reverse Drain Current (A)
V = 0 V
10
0.5 1.0 1.5 2.0 2.5
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
10
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
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IRL3502S
120
LIMITED BY PACKAGE
100
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
800
TOP
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
29A
40A
64A
°
D = 0.50
thJC
0.20
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRL3502S
)
0.014
( W )
0.012
0.010
0.008
Drain-to-Source On Resistance
0.006
DS (on)
R
0.004
0 100 200 300 400
V = 4 .5V
GS
V = 7.0 V
GS
I , D rain Cur rent (A)
D
Fig 12. On-Resistance Vs. Drain Current
0.010
( W )
0.008
I = 64A
D
0.006
Drain-to-Source On Resistance
DS (on)
R
A
0.004
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V , G a t e - to - So u r c e Voltage (V
GS
Fig 13. On-Resistance Vs. Gate Voltage
A
Page 7
A
D2Pak Package Outline
IRL3502S
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTES:
1 D IME NSIO NS A FT ER SOL DE R DIP.
2 DIMENS IONING & TOLE RA N C ING PER A NS I Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010) M B A M
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
1 - G AT E
2 - D RAIN
3 - S OUR CE
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
10.16 (.400)
REF .
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
R EF .
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
INTERNATIO NAL
R ECTIF IE R
L O GO
A S SEMBLY
L O T CODE
F530S
9246
9 B 1 M
PART NUMB ER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
Page 8
IRL3502S
)
)
)
)
)
(
)
Tape & Reel Information
D2Pak
TRR
1.60 (.063)
1.50 (.059)
4.10 (.16 1)
3.90 (.15 3)
1.60 (.06 3)
1.50 (.05 9)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
FEED DIRECTION
13.50 (.532
12.80 (.504
330.00
(14.173)
MAX.
NOTES :
1. COM FOR M S T O EIA -4 18 .
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
11.60 (.457)
11.40 (.449)
1.75 (.069 )
1.25 (.049 )
16.10 (.634)
15.90 (.626)
15.42 (.609 )
15.22 (.601 )
27.40 (1.079
23.90 (.941
4
26.40 (1.039)
24.40 (.961)
3
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
60.00 (2.362
M IN .
30.40
MAX .
4
1.197
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
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